HGT1S10N120BNST

HGT1S10N120BNST
Mfr. #:
HGT1S10N120BNST
Produttore:
ON Semiconductor
Descrizione:
IGBT 1200V 35A 298W TO263AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGT1S10N120BNST Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Fairchild Semiconductor
categoria di prodotto
IGBT - Singolo
Serie
-
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.046296 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tipo di ingresso
Standard
Tipo di montaggio
Montaggio superficiale
Pacchetto-dispositivo-fornitore
TO-263AB
Configurazione
Separare
Potenza-Max
298W
Reverse-Tempo di ripristino-trr
-
Corrente-Collettore-Ic-Max
35A
Tensione-Collettore-Emettitore-Ripartizione-Max
1200V
Tipo IGBT
NPT
Corrente-Collettore-Impulsato-Icm
80A
Vce-su-Max-Vge-Ic
2.7V @ 15V, 10A
Energia di commutazione
320μJ (on), 800μJ (off)
Gate-Charge
100nC
Td-on-off-25°C
23ns/165ns
Condizione di test
960V, 10A, 10 Ohm, 15V
Pd-Power-Dissipazione
298 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Collettore-Emettitore-Tensione-VCEO-Max
1200 V
Collettore-Emettitore-Saturazione-Tensione
2.7 V
Continuo-Collettore-Corrente-a-25-C
35 A
Gate-Emettitore-Corrente di dispersione
+/- 250 nA
Massima-tensione-gate-emettitore
+/- 20 V
Continuo-Collettore-Corrente-Ic-Max
35 A
Tags
HGT1S10N120BNS, HGT1S10N120B, HGT1S10N1, HGT1S10, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, ON Semiconductor HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263)
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB
***inecomponents.com
TO-263, SINGLE, 1200V, NPT Series N-Channel IGBT
***eco
TO-263, SINGLE, 1200V, NPT SERIES N-CHANNEL IGBT<AZ
***ser
IGBTs N-Channel IGBT NPT Series 1200V
***ark
IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
***i-Key
IGBT NPT N-CHAN 1200V TO-263AB
***Semiconductor
IGBT, 1200V, NPT
***rchild Semiconductor
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
IGBT, SINGOLO, 1.2KV, 35A, TO-263AB-3; Corrente di Collettore CC:35A; Tensione Saturaz Collettore-Emettitore Vce(on):2.45V; Dissipazione di Potenza Pd:298W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-263AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
HGT1S10N120BNST
DISTI # V72:2272_06305664
ON SemiconductorTO-263, SINGLE, 1200V, NPT SER142
  • 100:$2.0040
  • 25:$2.0790
  • 10:$2.3100
  • 1:$2.9854
HGT1S10N120BNST
DISTI # V36:1790_06305664
ON SemiconductorTO-263, SINGLE, 1200V, NPT SER0
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNSTCT-ND
    ON SemiconductorIGBT 1200V 35A 298W TO263AB
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    1241In Stock
    • 100:$2.1815
    • 10:$2.6630
    • 1:$2.9600
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNSTDKR-ND
    ON SemiconductorIGBT 1200V 35A 298W TO263AB
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    1241In Stock
    • 100:$2.1815
    • 10:$2.6630
    • 1:$2.9600
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNSTTR-ND
    ON SemiconductorIGBT 1200V 35A 298W TO263AB
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    800In Stock
    • 2400:$1.4482
    • 1600:$1.5206
    • 800:$1.8030
    HGT1S10N120BNST
    DISTI # 33603808
    ON SemiconductorTO-263, SINGLE, 1200V, NPT SER9600
    • 800:$0.7986
    HGT1S10N120BNST
    DISTI # 25744132
    ON SemiconductorTO-263, SINGLE, 1200V, NPT SER142
    • 100:$2.0040
    • 25:$2.0790
    • 10:$2.3100
    • 5:$2.7140
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNST
    ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R (Alt: HGT1S10N120BNST)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 0
    • 8000:€0.8659
    • 4800:€0.9279
    • 3200:€0.9999
    • 1600:€1.0829
    • 800:€1.2999
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNST
    ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S10N120BNST)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel
    Americas - 0
    • 1600:$1.7900
    • 3200:$1.7900
    • 4800:$1.7900
    • 8000:$1.7900
    • 800:$1.8900
    HGT1S10N120BNST
    DISTI # 29H0101
    ON SemiconductorIGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes0
    • 9600:$1.3700
    • 2400:$1.4100
    • 800:$1.5400
    • 1:$1.5500
    HGT1S10N120BNST
    DISTI # 31Y1824
    ON SemiconductorIGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes496
    • 500:$1.9900
    • 250:$2.1900
    • 100:$2.2900
    • 50:$2.3900
    • 25:$2.5000
    • 10:$2.6000
    • 1:$3.0200
    HGT1S10N120BNST
    DISTI # 512-HGT1S10N120BNST
    ON SemiconductorIGBT Transistors N-Channel IGBT NPT Series 1200V
    RoHS: Compliant
    557
    • 1:$2.7300
    • 10:$2.3200
    • 100:$2.0100
    • 250:$1.9100
    • 500:$1.7100
    • 800:$1.4400
    • 2400:$1.3700
    • 4800:$1.3200
    HGT1S10N120BNS
    DISTI # 512-HGT1S10N120BNS
    ON SemiconductorIGBT Transistors 35A 1200V NPT N-Ch
    RoHS: Compliant
    0
      HGT1S10N120BNST
      DISTI # 8076660P
      ON SemiconductorIGBTFAIRCHILDHGT1S10N120BNST, RL1410
      • 400:£1.7550
      • 200:£2.0700
      • 40:£2.3850
      • 8:£2.7050
      HGT1S10N120BNST
      DISTI # 8076660
      ON SemiconductorIGBTFAIRCHILDHGT1S10N120BNST, PK38
      • 400:£1.7550
      • 200:£2.0700
      • 40:£2.3850
      • 8:£2.7050
      • 2:£3.0250
      HGT1S10N120BNST INSTOCK18466
        HGT1S10N120BNST
        DISTI # HGT1S10N120BNST
        ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,D2PAK1049
        • 1:$1.9100
        • 5:$1.6400
        • 25:$1.3200
        • 100:$1.1800
        • 500:$1.1100
        HGT1S10N120BNST
        DISTI # 2454176
        ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
        RoHS: Compliant
        496
        • 500:$2.6400
        • 250:$2.9400
        • 100:$3.1000
        • 10:$3.5700
        • 1:$4.2000
        HGT1S10N120BNST
        DISTI # 2454176RL
        ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
        RoHS: Compliant
        0
        • 500:$2.6400
        • 250:$2.9400
        • 100:$3.1000
        • 10:$3.5700
        • 1:$4.2000
        HGT1S10N120BNST
        DISTI # 2454176
        ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3720
        • 500:£1.1400
        • 250:£1.5200
        • 100:£1.6000
        • 10:£1.8300
        • 1:£2.4300
        Immagine Parte # Descrizione
        HGT1S10N120BNST

        Mfr.#: HGT1S10N120BNST

        OMO.#: OMO-HGT1S10N120BNST

        IGBT Transistors N-Channel IGBT NPT Series 1200V
        HGT1S10N120BNS

        Mfr.#: HGT1S10N120BNS

        OMO.#: OMO-HGT1S10N120BNS

        IGBT Transistors 35A 1200V NPT N-Ch
        HGT1S10N120BNST

        Mfr.#: HGT1S10N120BNST

        OMO.#: OMO-HGT1S10N120BNST-ON-SEMICONDUCTOR

        IGBT 1200V 35A 298W TO263AB
        HGT1S10N1208NST

        Mfr.#: HGT1S10N1208NST

        OMO.#: OMO-HGT1S10N1208NST-1190

        Nuovo e originale
        HGT1S10N120BN

        Mfr.#: HGT1S10N120BN

        OMO.#: OMO-HGT1S10N120BN-1190

        Nuovo e originale
        HGT1S10N120BNS

        Mfr.#: HGT1S10N120BNS

        OMO.#: OMO-HGT1S10N120BNS-ON-SEMICONDUCTOR

        IGBT 1200V 35A 298W TO263AB
        HGT1S10N50

        Mfr.#: HGT1S10N50

        OMO.#: OMO-HGT1S10N50-1190

        Nuovo e originale
        HGT1S10N120BNS  10N120BN

        Mfr.#: HGT1S10N120BNS 10N120BN

        OMO.#: OMO-HGT1S10N120BNS-10N120BN-1190

        Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        4500
        Inserisci la quantità:
        Il prezzo attuale di HGT1S10N120BNST è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        1,17 USD
        1,17 USD
        10
        1,11 USD
        11,11 USD
        100
        1,05 USD
        105,25 USD
        500
        0,99 USD
        497,00 USD
        1000
        0,94 USD
        935,50 USD
        Iniziare con
        Top