RN4907,LF(CT

RN4907,LF(CT
Mfr. #:
RN4907,LF(CT
Produttore:
Toshiba
Descrizione:
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RN4907,LF(CT Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Toshiba
Categoria di prodotto:
Transistor bipolari - Pre-polarizzati
RoHS:
Y
Polarità del transistor:
NPN, PNP
Resistenza di ingresso tipica:
10 kOhms
Rapporto resistore tipico:
0.213
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-363-6
Guadagno base/collettore DC hfe min:
80
Tensione collettore-emettitore VCEO Max:
50 V
Corrente continua del collettore:
100 mA
Pd - Dissipazione di potenza:
200 mW
Serie:
RN4907
Confezione:
Bobina
Emettitore-tensione di base VEBO:
6 V
Marca:
Toshiba
Numero di canali:
2 Channel
Tipologia di prodotto:
BJT - Transistor bipolari - Prepolarizzati
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Unità di peso:
0.000212 oz
Tags
RN4907, RN490, RN49, RN4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS PREBIAS NPN/PNP 50V US6
***
US6-PLN ACTIVE
***ical
Trans Digital BJT NPN 50V 100mA 200mW 6-Pin US T/R
***el Electronic
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS 2NPN PREBIAS 0.2W US6
***
TRANS US6 PLN (LF) 200MW
***et
Trans Digital BJT NPN/PNP 50V 0.1A 6-Pin US Embossed T/R
***el Electronic
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS NPN/PNP PREBIAS 0.2W US6
***et
Trans Digital BJT NPN 50V 0.1A 6-Pin US Embossed T/R
*** Electronics
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS 2NPN PREBIAS 0.2W US6
***el Electronic
IC OPAMP GP 2 CIRCUIT 10UMAX
***
TRANS US6 PLN (LF) 200MW
***icontronic
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon
***ure Electronics
MMDT5551 Series Dual NPN 160 V 200 mW Small Signal Transistor SMT - SOT-363
***(Formerly Allied Electronics)
Transistor Dual NPN 160V 0.2A SOT363-6 | Diodes Inc MMDT5551-7-F
***ical
Trans GP BJT NPN 160V 0.2A 200mW 6-Pin SOT-363 T/R
***eco
MMDT5551-7-F,BIPOLAR TRANSISTO R DUAL NPN SOT-363 ROHS 3K
***ment14 APAC
Transistor, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:200mW; DC
***nell
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
***ure Electronics
UMB10N Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-88
***p One Stop Global
Trans Digital BJT PNP 50V 100mA 6-Pin UMT T/R
***ment14 APAC
Transistor DUAL UM6 PNP/PNP; Digital Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA;
***ark
TRANSISTOR DUAL UM6 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:150mW; Min Hfe:80; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
***nell
TRANSISTOR DUAL UM6 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMB10N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
***p One Stop Global
Trans Digital BJT PNP 50V 100mA 200mW Automotive 6-Pin SOT-363 T/R
***ca Corp
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***ure Electronics
DDA Series 50 V 100 mA Dual PNP Pre-Biased Small Signal Transistor - SOT-363
***(Formerly Allied Electronics)
Trans Digital BJT PNP 100mA 6Pin SOT363 | Diodes Inc DDA123JU-7-F
***ark
Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DDA123JU-7-F
Parte # Mfg. Descrizione Azione Prezzo
RN4907,LF
DISTI # RN4907LFCT-ND
Toshiba America Electronic ComponentsTRANS NPN/PNP PREBIAS 0.2W US6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    RN4907,LF(CT
    DISTI # 757-RN4907LF(CT
    Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
    RoHS: Compliant
    0
    • 1:$0.4200
    • 10:$0.2310
    • 100:$0.0990
    • 1000:$0.0760
    • 3000:$0.0580
    • 9000:$0.0520
    • 24000:$0.0480
    • 45000:$0.0430
    • 99000:$0.0410
    Immagine Parte # Descrizione
    RN4907FE,LF(CT

    Mfr.#: RN4907FE,LF(CT

    OMO.#: OMO-RN4907FE-LF-CT

    Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
    RN4907,LF

    Mfr.#: RN4907,LF

    OMO.#: OMO-RN4907-LF

    Bipolar Transistors - Pre-Biased US6-PLN
    RN4907,LF(CT

    Mfr.#: RN4907,LF(CT

    OMO.#: OMO-RN4907-LF-CT-123

    Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
    RN4907(T5LFT)CT-ND

    Mfr.#: RN4907(T5LFT)CT-ND

    OMO.#: OMO-RN4907-T5LFT-CT-ND-1190

    Nuovo e originale
    RN4907(T5LFT)DKR-ND

    Mfr.#: RN4907(T5LFT)DKR-ND

    OMO.#: OMO-RN4907-T5LFT-DKR-ND-1190

    Nuovo e originale
    RN4907(T5LFT)TR-ND

    Mfr.#: RN4907(T5LFT)TR-ND

    OMO.#: OMO-RN4907-T5LFT-TR-ND-1190

    Nuovo e originale
    RN4907FELF(CTDKR-ND

    Mfr.#: RN4907FELF(CTDKR-ND

    OMO.#: OMO-RN4907FELF-CTDKR-ND-1190

    Nuovo e originale
    RN4907LFCT-ND

    Mfr.#: RN4907LFCT-ND

    OMO.#: OMO-RN4907LFCT-ND-1190

    Nuovo e originale
    RN4907FELF(CT

    Mfr.#: RN4907FELF(CT

    OMO.#: OMO-RN4907FELF-CT-1190

    Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/ 1MH
    RN4907

    Mfr.#: RN4907

    OMO.#: OMO-RN4907-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    2000
    Inserisci la quantità:
    Il prezzo attuale di RN4907,LF(CT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,42 USD
    0,42 USD
    10
    0,23 USD
    2,31 USD
    100
    0,10 USD
    9,90 USD
    1000
    0,08 USD
    76,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
    Iniziare con
    Top