STGYA120M65DF2AG

Mfr. #:: STGYA120M65DF2AG
Produttore:: STMicroelectronics
Descrizione:: IGBT Transistors Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: STGYA120M65DF2AG Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: STGYA120M65DF2AG maggiori informazioni STGYA120M65DF2AG Product Details

Attributo del prodotto
Valore attributo

Produttore:: STMicroelectronics

Categoria di prodotto:: Transistor IGBT

RoHS:: Y

Tecnologia:: si

Pacchetto/custodia:: MAX-247-3

Stile di montaggio:: Foro passante

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 650 V

Tensione di saturazione collettore-emettitore:: 1.65 V

Tensione massima dell'emettitore di gate:: 20 V

Corrente continua del collettore a 25 C:: 160 A

Pd - Dissipazione di potenza:: 625 W

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Serie:: STGYA120M65DF2AG

Qualificazione:: AEC-Q101

Marca:: STMicroelectronics

Corrente di dispersione gate-emettitore:: 250 uA

Tipologia di prodotto:: Transistor IGBT

Quantità confezione di fabbrica:: 600

sottocategoria:: IGBT

Tags: STGY, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGYA120M65DF2AG Descrizione

***ical: Trans IGBT Chip N-CH 650V 160A 625000mW Automotive 3-Pin(3+Tab) Max247 Tube

***va Crawler: Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package

***ment14 APAC: IGBT, SINGLE, 650V, 160A, MAX-247-3

***ronik: IGBT650V 120A 1,95V TO-247MAXL

***ark: Igbt, Single, 650V, 160A, Max-247-3; Dc Collector Current:160A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:625W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:max-247; No. Of Pins:3Pins;rohs Compliant: Yes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
STGYA120M65DF2AG DISTI # 497-18640-ND	STMicroelectronics	IGBT RoHS: Compliant Min Qty: 1 Container: Tube	590In Stock	600:$7.6125 100:$8.5575 25:$9.7124 10:$10.1330 1:$11.0300
STGYA120M65DF2AG DISTI # STGYA120M65DF2AG	STMicroelectronics	Trench gate field-stop IGBT, M series 650 V, 120 A low loss (Alt: STGYA120M65DF2AG) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€5.7900 500:€6.2900 100:€6.4900 50:€6.6900 25:€6.9900 10:€7.2900 1:€7.9900
STGYA120M65DF2AG DISTI # STGYA120M65DF2AG	STMicroelectronics	Trench gate field-stop IGBT, M series 650 V, 120 A low loss - Trays (Alt: STGYA120M65DF2AG) RoHS: Compliant Min Qty: 600 Container: Tray	Americas - 0	6000:$5.9900 3000:$6.0900 1800:$6.2900 1200:$6.3900 600:$6.4900
STGYA120M65DF2AG DISTI # 48AC3298	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$6.2500
STGYA120M65DF2AG DISTI # 511-STGYA120M65DF2AG	STMicroelectronics	IGBT Transistors Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package RoHS: Compliant	0	1:$10.5000 10:$9.6600 25:$9.2600 100:$8.1500 250:$7.7500 500:$7.2500 1000:$6.6500
STGYA120M65DF2AG DISTI # IGBT2224	STMicroelectronics	IGBT650V 120A 1,95V TO-247MAXL RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	600:$7.4400
STGYA120M65DF2AG DISTI # 2729674	STMicroelectronics	IGBT, SINGLE, 650V, 160A, MAX-247-3	82	100:£6.2800 50:£6.7100 10:£7.1400 5:£8.0900 1:£8.6600
STGYA120M65DF2AG DISTI # 2729674	STMicroelectronics	IGBT, SINGLE, 650V, 160A, MAX-247-3 RoHS: Compliant	60	250:$10.6400 100:$11.4100 50:$12.8100 10:$14.2600 5:$16.0900 1:$18.4600

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: STGYA120M65DF2AG OMO.#: OMO-STGYA120M65DF2AG	IGBT Transistors Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package
	Mfr.#: STGYA120M65DF2 OMO.#: OMO-STGYA120M65DF2	IGBT Transistors PTD HIGH VOLTAGE
	Mfr.#: STGYA120M65DF2 OMO.#: OMO-STGYA120M65DF2-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, M S
	Mfr.#: STGYA120M65DF2AG OMO.#: OMO-STGYA120M65DF2AG-STMICROELECTRONICS	Trench gate field-stop IGBT, M series 650 V, 120 A low loss (Alt: STGYA120M65DF2AG)

Disponibilità

Azione:: Available
Su ordine:: 5000
Inserisci la quantità:

Il prezzo attuale di STGYA120M65DF2AG è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~10,50 USD~~; ~~10,50 USD~~

10: ~~9,66 USD~~; ~~96,60 USD~~

25: ~~9,26 USD~~; ~~231,50 USD~~

100: ~~8,15 USD~~; ~~815,00 USD~~

250: ~~7,75 USD~~; ~~1 937,50 USD~~

500: ~~7,25 USD~~; ~~3 625,00 USD~~

1000: ~~6,65 USD~~; ~~6 650,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

STGY 11
STG 909

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STGYA120M65DF2AG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes