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FGL60N100BNTDTU

FGL60N100BNTDTU
Mfr. #:
FGL60N100BNTDTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors HIGH POWER
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGL60N100BNTDTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-264-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1000 V
Tensione di saturazione collettore-emettitore:
1.5 V
Tensione massima dell'emettitore di gate:
25 V
Corrente continua del collettore a 25 C:
60 A
Pd - Dissipazione di potenza:
180 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
FGL60N100BNTD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
60 A
Altezza:
26 mm
Lunghezza:
20 mm
Larghezza:
5 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
60 A
Corrente di dispersione gate-emettitore:
+/- 500 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
375
sottocategoria:
IGBT
Parte # Alias:
FGL60N100BNTDTU_NL
Unità di peso:
0.238311 oz
Tags
FGL60N100BNTDT, FGL60N100BNT, FGL60N100B, FGL60N10, FGL60N1, FGL60N, FGL60, FGL6, FGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Transistor, igbt, n-Chan+Diode, 1Kv V(Br)Ces, 42A I(C), to-264 Rohs Compliant: Yes
***ure Electronics
FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 1.2kV; Operating Temperature Range
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ical
Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.
***ical
Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ource
Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ure Electronics
SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264
***ment14 APAC
SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***ource
Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ical
Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264
***nell
IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
Parte # Mfg. Descrizione Azione Prezzo
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU-ND		ON SemiconductorIGBT 1000V 60A 180W TO264
RoHS: Compliant
Min Qty: 375
Container: Tube		Limited Supply - Call
  • 375:$4.0482
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€1.8900
  • 1000:€1.8900
  • 50:€1.9900
  • 100:€1.9900
  • 25:€2.0900
  • 10:€2.1900
  • 1:€2.2900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 109
Container: Bulk		Americas - 0
  • 1090:$2.7900
  • 218:$2.8900
  • 327:$2.8900
  • 545:$2.8900
  • 109:$2.9900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 375
Container: Tube		Americas - 0
  • 3750:$2.4900
  • 750:$2.5900
  • 1500:$2.5900
  • 2250:$2.5900
  • 375:$2.6900
FGL60N100BNTDTU
DISTI # 60J0636		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,42A I(C),TO-264 RoHS Compliant: Yes0
  • 500:$2.3600
  • 250:$2.4300
  • 100:$2.9100
  • 50:$3.3600
  • 25:$3.5800
  • 10:$4.0900
  • 1:$4.7200
FGL60N100BNTDTU
DISTI # 512-FGL60N100BNTDTU		ON SemiconductorIGBT Transistors HIGH POWER
RoHS: Compliant		0
    FGL60N100BNTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA
    RoHS: Compliant    		25
    • 1000:$3.0300
    • 500:$3.1900
    • 100:$3.3200
    • 25:$3.4600
    • 1:$3.7300
    Immagine Parte # Descrizione
    FGL60N100BNTDTU

    Mfr.#: FGL60N100BNTDTU

    OMO.#: OMO-FGL60N100BNTDTU

    		 IGBT Transistors HIGH POWER
    FGL60N100BNTDTU

    Mfr.#: FGL60N100BNTDTU

    OMO.#: OMO-FGL60N100BNTDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors HIGH POWER
    FGL60N100BNTD

    Mfr.#: FGL60N100BNTD

    OMO.#: OMO-FGL60N100BNTD-ON-SEMICONDUCTOR

    		 IGBT 1000V 60A 180W TO264
    FGL60N100ANTD

    Mfr.#: FGL60N100ANTD

    OMO.#: OMO-FGL60N100ANTD-1190

    		 Nuovo e originale
    FGL60N100BNTD,FGL40N120A

    Mfr.#: FGL60N100BNTD,FGL40N120A

    OMO.#: OMO-FGL60N100BNTD-FGL40N120A-1190

    		 Nuovo e originale
    FGL60N100BNTDU

    Mfr.#: FGL60N100BNTDU

    OMO.#: OMO-FGL60N100BNTDU-1190

    		 Nuovo e originale
    FGL60N100D

    Mfr.#: FGL60N100D

    OMO.#: OMO-FGL60N100D-1190

    		 Nuovo e originale
    FGL60N170

    Mfr.#: FGL60N170

    OMO.#: OMO-FGL60N170-1190

    		 Nuovo e originale
    FGL60N170BNTD

    Mfr.#: FGL60N170BNTD

    OMO.#: OMO-FGL60N170BNTD-1190

    		 Nuovo e originale
    FGL60N170N

    Mfr.#: FGL60N170N

    OMO.#: OMO-FGL60N170N-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di FGL60N100BNTDTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    375
    3,15 USD
    1 181,25 USD
    750
    2,83 USD
    2 122,50 USD
    1125
    2,39 USD
    2 688,75 USD
    2625
    2,27 USD
    5 958,75 USD
    5250
    2,18 USD
    11 445,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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