2SK1464

Mfr. #:: 2SK1464
Produttore:: Rochester Electronics, LLC
Descrizione:: 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: 2SK1464 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: SANYO

categoria di prodotto: Chip IC

Tags: 2SK146, 2SK14, 2SK1, 2SK

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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2SK1464 Descrizione

***S: French Electronic Distributor since 1988

***icroelectronics: N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package

***ure Electronics: N-Channel 900 V 980 mOhm Flange Mount SuperMESH Power Mosfet - TO-247

***r Electronics: Power Field-Effect Transistor, 9.2A I(D), 900V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ark: MOSFET, N CH, 900V, 9.2A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***emi: N-Channel Power MOSFET, QFET®, 900V, 8.6A, 1.3Ω, TO-3P

***et: Trans MOSFET N-CH 900V 8.6A 3-Pin(3+Tab) TO-3P Rail

***r Electronics: Power Field-Effect Transistor, 8.6A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***enic: 900V 8.6A 1´Î@10V4.3A 240W 5V@250uA 25pF@25V N Channel 2.7nF@25V 55nC@10V -55¡Í~+150¡Í@(Tj) TO-3PN MOSFETs ROHS

***ark: QF 900V 1.3OHM TO3PN / TUBE ROHS COMPLIANT: YES

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***ark: MOSFET Transistor, N Channel, 9 A, 900 V, 1.12 ohm, 10 V, 5 V

***emi: N-Channel QFET® MOSFET 900V, 9.0A, 1.4Ω

*** Source Electronics: MOSFET N-CH 900V 9A TO-3P / Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***(Formerly Allied Electronics): IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC

***ure Electronics: Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC

***ment14 APAC: MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-CHANNEL 900V - 1.1 OHM - 8A TO-220 ZENER PROTECTED SUPERMESH MOSFET

***ical: Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N CHANNEL MOSFET, 900V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220

***ure Electronics: N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:8A; Resistance, Rds On:1.12ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:32A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:205W; Power, Pd:205W; Resistance, Rds on Max:1.4ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V; Width, External:10.67mm

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
2SK1464	ON Semiconductor	RoHS: Not Compliant	6645	1000:$5.9200 500:$6.2300 100:$6.4900 25:$6.7700 1:$7.2900
2SK1464	SANYO Semiconductor Co Ltd	8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML	32	25:$9.2138 5:$10.2375 1:$13.6500

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: 2SK1399-L OMO.#: OMO-2SK1399-L-1190	Nuovo e originale
	Mfr.#: 2SK1580-T2 OMO.#: OMO-2SK1580-T2-1190	Nuovo e originale
	Mfr.#: 2SK1581-T2B-A OMO.#: OMO-2SK1581-T2B-A-1190	Nuovo e originale
	Mfr.#: 2SK1848-TB-E OMO.#: OMO-2SK1848-TB-E-1190	Nuovo e originale
	Mfr.#: 2SK1936-01 OMO.#: OMO-2SK1936-01-1190	Nuovo e originale
	Mfr.#: 2SK2158(M)-T2B OMO.#: OMO-2SK2158-M--T2B-1190	Nuovo e originale
	Mfr.#: 2SK3492-TL-E OMO.#: OMO-2SK3492-TL-E-1190	Trans MOSFET N-CH Si 60V 8A 3-Pin(2+Tab) TP-FA
	Mfr.#: 2SK4065-DL-1EX OMO.#: OMO-2SK4065-DL-1EX-ON-SEMICONDUCTOR	MOSFET N-CH 75V TO263-2
	Mfr.#: 2SK782 OMO.#: OMO-2SK782-1190	Nuovo e originale
	Mfr.#: 2SK932-24-N-TB-E OMO.#: OMO-2SK932-24-N-TB-E-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 5500
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Il prezzo attuale di 2SK1464 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~8,88 USD~~; ~~8,88 USD~~

10: ~~8,44 USD~~; ~~84,36 USD~~

100: ~~7,99 USD~~; ~~799,20 USD~~

500: ~~7,55 USD~~; ~~3 774,00 USD~~

1000: ~~7,10 USD~~; ~~7 104,00 USD~~

Iniziare con

2SK146 16
2SK14 100
2SK1 846
2SK 4442

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2SK1464

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes