IGP20N65H5

IGP20N65H5
Mfr. #:
IGP20N65H5
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors IGBT PRODUCTS TrenchStop 5
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IGP20N65H5 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IGP20N65H5 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.6 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
42 A
Pd - Dissipazione di potenza:
125 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Confezione:
Tubo
Intervallo operativo di temperatura:
- 40 C to + 175 C
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
500
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IGP20N65H5XKSA1 SP001133070
Unità di peso:
0.211644 oz
Tags
IGP20N65H, IGP20N65, IGP20, IGP2, IGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descrizione Azione Prezzo
IGP20N65H5XKSA1
DISTI # SP001133070
Infineon Technologies AGTrans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube (Alt: SP001133070)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 15
  • 1000:€0.8449
  • 500:€0.8609
  • 100:€0.8739
  • 50:€0.8889
  • 25:€0.9529
  • 10:€1.1459
  • 1:€1.4719
IGP20N65H5XKSA1
DISTI # IGP20N65H5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube - Bulk (Alt: IGP20N65H5XKSA1)
RoHS: Compliant
Min Qty: 397
Container: Bulk
Americas - 0
  • 3970:$0.7999
  • 1985:$0.8149
  • 1191:$0.8429
  • 794:$0.8749
  • 397:$0.9069
IGP20N65H5XKSA1
DISTI # IGP20N65H5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube - Rail/Tube (Alt: IGP20N65H5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$0.9239
  • 3000:$0.9409
  • 2000:$0.9739
  • 1000:$1.0099
  • 500:$1.0479
IGP20N65H5
DISTI # 726-IGP20N65H5
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS TrenchStop 5
RoHS: Compliant
149
  • 1:$2.1400
  • 10:$1.8100
  • 100:$1.4500
  • 500:$1.2700
  • 1000:$1.0500
  • 2500:$0.9830
  • 5000:$0.9460
IGP20N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant
200
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
IGP20N65H5
DISTI # IGP20N65H5
Infineon Technologies AGTransistor: IGBT,650V,21A,63W,TO220-3,Series: H553
  • 1:$1.5500
  • 3:$1.3900
  • 10:$1.2300
  • 50:$1.0600
IGP20N65H5XKSA1
DISTI # IGP20N65H5
Infineon Technologies AG650V 42A 125W TO220
RoHS: Compliant
470
  • 1:€1.5500
  • 10:€1.1500
  • 50:€0.9500
  • 100:€0.8700
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LDO Voltage Regulators 1A LDO
TLV75725PDBVR

Mfr.#: TLV75725PDBVR

OMO.#: OMO-TLV75725PDBVR

LDO Voltage Regulators 1A LDO
HS50 50R J

Mfr.#: HS50 50R J

OMO.#: OMO-HS50-50R-J

Wirewound Resistors - Chassis Mount 50W 50 Ohms 5%
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High Power LEDs - Single Color ROSE 180 - 200 PPF
L2C5-SPR11825G3200

Mfr.#: L2C5-SPR11825G3200

OMO.#: OMO-L2C5-SPR11825G3200-LUMILEDS

LUXEON SUNPLUS COB 1825, ROSE
DP83822IFRHBR

Mfr.#: DP83822IFRHBR

OMO.#: OMO-DP83822IFRHBR-TEXAS-INSTRUMENTS

IC TXRX ETHERNET 32VQFN
TLV75725PDBVR

Mfr.#: TLV75725PDBVR

OMO.#: OMO-TLV75725PDBVR-TEXAS-INSTRUMENTS

1-A, Low IQ, Small Size, Low Dropout Regulato
IRFB4228PBF

Mfr.#: IRFB4228PBF

OMO.#: OMO-IRFB4228PBF-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET MOSFT 150V 83A 15mOhm 72nC
Disponibilità
Azione:
149
Su ordine:
2132
Inserisci la quantità:
Il prezzo attuale di IGP20N65H5 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,14 USD
2,14 USD
10
1,81 USD
18,10 USD
100
1,45 USD
145,00 USD
500
1,27 USD
635,00 USD
1000
1,05 USD
1 050,00 USD
2500
0,98 USD
2 457,50 USD
5000
0,95 USD
4 730,00 USD
10000
0,91 USD
9 100,00 USD
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