SIA433EDJ-T1-GE3

Mfr. #:: SIA433EDJ-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET P-CH 20V 12A SC-70-6
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIA433EDJ-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SIA433EDJ-T1-GE3 Datasheet SIA433EDJ-T1-GE3 Datasheet (P4-P6)SIA433EDJ-T1-GE3 Datasheet (P7-P9)
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Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SIA433EDJ-GE3

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR SC-70-6

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR SC-70-6 Single

Configurazione: Separare

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 19W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 18 mOhm @ 7.6A, 4.5V

Vgs-th-Max-Id: 1.2V @ 250μA

Gate-Carica-Qg-Vgs: 75nC @ 8V

Pd-Power-Dissipazione: 19 W

Tempo di caduta: 3.2 us

Ora di alzarsi: 1.7 us

Vgs-Gate-Source-Voltage: 12 V

Id-Continuo-Scarico-Corrente: - 12 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: - 1.2 V

Rds-On-Drain-Source-Resistenza: 18 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 6 us

Tempo di ritardo all'accensione tipico: 0.71 us

Qg-Gate-Carica: 50 nC

Transconduttanza diretta-Min: 35 S

Tags: SIA433, SIA43, SIA4, SIA

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIA433EDJ-T1-GE3 DISTI # V72:2272_09216837	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	644	500:$0.3232 250:$0.3761 100:$0.3771 25:$0.4647 10:$0.4666 1:$0.5489
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7836In Stock	1000:$0.3263 500:$0.4079 100:$0.5506 10:$0.7140 1:$0.8200
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7836In Stock	1000:$0.3263 500:$0.4079 100:$0.5506 10:$0.7140 1:$0.8200
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.2871
SIA433EDJ-T1-GE3 DISTI # 29553397	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	644	500:$0.3232 250:$0.3761 100:$0.3771 28:$0.4647
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA433EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA433EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3219 6000:$0.3119 12000:$0.2999 18000:$0.2909 30000:$0.2829
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA433EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.5619 6000:€0.3829 12000:€0.3299 18000:€0.3049 30000:€0.2829
SIA433EDJ-T1-GE3 DISTI # 79R5403	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 79R5403) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.7200 25:$0.5750 50:$0.5060 100:$0.4360 250:$0.3980 500:$0.3600 1000:$0.2880
SIA433EDJ-T1-GE3 DISTI # 79R5403	Vishay Intertechnologies	P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):18mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-500mV,Power Dissipation Pd:3.5W , RoHS Compliant: Yes	0	1:$0.7200 25:$0.5750 50:$0.5060 100:$0.4360 250:$0.3980 500:$0.3600 1000:$0.2880
SIA433EDJ-T1-GE3 DISTI # 74R0197	Vishay Intertechnologies	P CH MOSFET,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,No. of Pins:6,On Resistance Rds(on):18mohm,Operating Temperature Max:150°C,Operating Temperature Min:-55°C,Operating Temperature Range:-55°C to +150°C , RoHS Compliant: Yes	0	1:$0.2670 3000:$0.2650 6000:$0.2520 12000:$0.2240
SIA433EDJ-T1-GE3 DISTI # 70459574	Vishay Siliconix	-20V [email protected] 12A P-Ch G-III RoHS: Compliant	0	3000:$0.3580 6000:$0.3330
SIA433EDJ-T1-GE3 DISTI # 781-SIA433EDJ-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant	275	1:$0.7200 10:$0.5750 100:$0.4360 500:$0.3600 1000:$0.2880 3000:$0.2610 6000:$0.2440
SIA433EDJ-T1-GE3	Vishay Siliconix		5750	9:$0.6000 35:$0.3900 130:$0.2250 446:$0.1920 965:$0.1680 2293:$0.1560
SIA433EDJ-T1-GE3	Vishay Semiconductors	POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 20V, 0.018OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	4600	3847:$0.2000 834:$0.2080 1:$0.8000
SIA433EDJT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIA433EDJ-T1-GE3 DISTI # 2679708	Vishay Intertechnologies	MOSFET, P-CH, -20V, -12A, POWERPAK SC70 RoHS: Compliant	0	3000:£0.2080 9000:£0.2070
SIA433EDJ-T1-GE3. DISTI # 1867633	Vishay Intertechnologies	P CHANNEL MOSFET RoHS: Compliant	0	1:£0.6330 25:£0.5050 50:£0.4440 100:£0.3840 250:£0.3500
SIA433EDJ-T1-GE3 DISTI # C1S803601064547	Vishay Intertechnologies	MOSFETs RoHS: Not Compliant	644	250:$0.3761 100:$0.3771 25:$0.4648 10:$0.4666
SIA433EDJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - Stock
SIA433EDJ-T1-GE3 DISTI # 2646398	Vishay Intertechnologies	MOSFET, P-CH, -20V, -12A, POWERPAK SC70 RoHS: Compliant	0	1:$1.1500 10:$0.9110 100:$0.6900 500:$0.5710 1000:$0.4560 3000:$0.4320
SIA433EDJ-T1-GE3 DISTI # 2679708	Vishay Intertechnologies	MOSFET, P-CH, -20V, -12A, POWERPAK SC70 RoHS: Compliant	0	3000:$0.4030 6000:$0.3930 9000:$0.3900
SIA433EDJ-T1-GE3. DISTI # 1867633	Vishay Intertechnologies	P CHANNEL MOSFET RoHS: Compliant	4247	1:$1.1100 50:$0.9070 100:$0.6990 500:$0.5830 1000:$0.5000 2500:$0.4710

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SIA433EDJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA433EDJ-T1-GE3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SIA433EDJ OMO.#: OMO-SIA433EDJ-1190	Nuovo e originale
	Mfr.#: SIA433EDJ-T1-GE3 OMO.#: OMO-SIA433EDJ-T1-GE3-VISHAY	MOSFET P-CH 20V 12A SC-70-6
	Mfr.#: SIA433EDJT1GE3 OMO.#: OMO-SIA433EDJT1GE3-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 5000
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Il prezzo attuale di SIA433EDJ-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,23 USD~~; ~~0,23 USD~~

10: ~~0,22 USD~~; ~~2,22 USD~~

100: ~~0,21 USD~~; ~~21,06 USD~~

500: ~~0,20 USD~~; ~~99,45 USD~~

1000: ~~0,19 USD~~; ~~187,20 USD~~

Iniziare con

SIA433 4
SIA43 28
SIA4 136
SIA 347

SIA433EDJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes