IXFB82N60Q3

IXFB82N60Q3
Mfr. #:
IXFB82N60Q3
Produttore:
Littelfuse
Descrizione:
IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFB82N60Q3 Scheda dati
Consegna:
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ECAD Model:
Maggiori informazioni:
IXFB82N60Q3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXFB82N60Q3
Confezione
Tubo
Unità di peso
0.056438 oz
Stile di montaggio
Foro passante
Nome depositato
HyperFET
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
1.56 kW
Ora di alzarsi
300 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
82 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistenza
75 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
275 nC
Tags
IXFB8, IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFB82N60Q3
DISTI # IXFB82N60Q3-ND
IXYS CorporationMOSFET N-CH 600V 82A PLUS264
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$26.4012
IXFB82N60Q3
DISTI # 747-IXFB82N60Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
RoHS: Compliant
16
  • 1:$31.0700
  • 5:$29.5200
  • 10:$28.7400
  • 25:$26.4100
  • 50:$25.2800
  • 100:$24.5400
  • 250:$22.5200
IXFB82N60Q3IXYS Corporation 25
    IXFB82N60Q3
    DISTI # IXFB82N60Q3
    IXYS CorporationTransistor: N-MOSFET,Q3-Class,unipolar,600V,82A,1560W,300ns25
    • 1:$32.2600
    • 5:$28.9900
    • 25:$25.6000
    Immagine Parte # Descrizione
    IXFB82N60P

    Mfr.#: IXFB82N60P

    OMO.#: OMO-IXFB82N60P

    MOSFET 82 Amps 600V 0.75 Ohm Rds
    IXFB82N60Q3

    Mfr.#: IXFB82N60Q3

    OMO.#: OMO-IXFB82N60Q3

    MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
    IXFB80N50Q2

    Mfr.#: IXFB80N50Q2

    OMO.#: OMO-IXFB80N50Q2

    MOSFET 80 Amps 500V 0.06 Rds
    IXFB82N60P

    Mfr.#: IXFB82N60P

    OMO.#: OMO-IXFB82N60P-IXYS-CORPORATION

    MOSFET N-CH 600V 82A PLUS 264
    IXFB80N50Q2

    Mfr.#: IXFB80N50Q2

    OMO.#: OMO-IXFB80N50Q2-IXYS-CORPORATION

    MOSFET 80 Amps 500V 0.06 Rds
    IXFB82N60Q3

    Mfr.#: IXFB82N60Q3

    OMO.#: OMO-IXFB82N60Q3-IXYS-CORPORATION

    IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di IXFB82N60Q3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    33,78 USD
    33,78 USD
    10
    32,09 USD
    320,91 USD
    100
    30,40 USD
    3 040,20 USD
    500
    28,71 USD
    14 356,50 USD
    1000
    27,02 USD
    27 024,00 USD
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