IRFU3806PBF

Mfr. #:: IRFU3806PBF
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CH 60V 43A I-PAK
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IRFU3806PBF Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: Raddrizzatore internazionale

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Confezione: Tubo

Unità di peso: 0.139332 oz

Stile di montaggio: Foro passante

Pacchetto-Custodia: IPAK-3

Tecnologia: si

Numero di canali: 1 Channel

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 71 W

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 43 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Rds-On-Drain-Source-Resistenza: 12.6 mOhms

Polarità del transistor: Canale N

Qg-Gate-Carica: 22 nC

Tags: IRFU3, IRFU, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFU3806PBF Descrizione

***(Formerly Allied Electronics): MOSFET, N Ch., 60V, 42A, 15.8 MOHM, 22 NC QG, I-PAK, Pb-Free

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ment14 APAC: MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:IPAK; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Turn Off Time:49ns; Turn On Time:6.3ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ser: MOSFETs- Power and Small Signal 24V 60A N-Channel No-Cancel/No-Return

***i-Key: MOSFET N-CH 60V 24A IPAK

***el Electronic: RES SMD 3.3K OHM 1% 1/4W 1206

***p One Stop Global: Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) DPAK-SL Rail

***ser: MOSFETs- Power and Small Signal 60V 20A N-Channel

***r Electronics: Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***-Wing Technology: Tube Through Hole N-Channel Single Mosfet Transistor 24A Ta 24A 62.5W 27ns

***r Electronics: Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 24V 60A N-Channel

***ure Electronics: Single N-Channel 55 V 0.027 Ohm 65 nC HEXFET® Power Mosfet - IPAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):27mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes

***nell: MOSFET, N, 55V, 37A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:37A; Resistance, Rds On:0.027ohm; Case Style:TO-251 (I-Pak); Case Style, Alternate:I-PAK; Current, Idm Pulse:160A; Power Dissipation:69W; Power, Pd:69W; Resistance, Rds on @ Vgs = 10V:27ohm; Thermal Resistance, Junction to Case A:1.8°C/W; Time, t Off:60ns; Time, t On:69ns; Voltage, Vds Max:55V

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***(Formerly Allied Electronics): IRFU014PBF N-channel MOSFET Transistor, 7.7 A, 60 V, 3-Pin IPAK

***nell: MOSFET, N, 60V, 7.7A, I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss

*** Stop Electro: Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***(Formerly Allied Electronics): MOSFET, N Ch., 60V, 77A, 8.4 MOHM, 51 NC QG, I-PAK, Pb-Free

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ment14 APAC: MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Turn Off Time:55ns; Turn On Time:13ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRFU3806PBF DISTI # IRFU3806PBF-ND	Infineon Technologies AG	MOSFET N-CH 60V 43A I-PAK RoHS: Compliant Min Qty: 900 Container: Tube	Limited Supply - Call
IRFU3806PBF	Infineon Technologies AG	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	2319	1000:$0.4100 500:$0.4300 100:$0.4500 25:$0.4700 1:$0.5000
IRFU3806PBF	International Rectifier	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	1120	1000:$0.4100 500:$0.4300 100:$0.4500 25:$0.4700 1:$0.5000
IRFU3806PBF DISTI # 942-IRFU3806PBF	Infineon Technologies AG	MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg RoHS: Compliant	0
IRFU3806PBF DISTI # 1602239	Infineon Technologies AG	MOSFET, N, I-PAK RoHS: Compliant	0	1:$1.9800 10:$1.6500 100:$1.2700 500:$1.0800 1000:$0.9360

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	Mfr.#: IRFU3710ZPBF OMO.#: OMO-IRFU3710ZPBF	MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
	Mfr.#: IRFU3412PBF OMO.#: OMO-IRFU3412PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 48A I-PAK
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	Mfr.#: IRFU310PBF,IRFU310,FU310 OMO.#: OMO-IRFU310PBF-IRFU310-FU310-1190	Nuovo e originale
	Mfr.#: IRFU321 OMO.#: OMO-IRFU321-1190	Power Field-Effect Transistor, 3.1A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
	Mfr.#: IRFU3710Z OMO.#: OMO-IRFU3710Z-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 42A I-PAK
	Mfr.#: IRFU3910PBF OMO.#: OMO-IRFU3910PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 16A I-PAK
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Disponibilità

Azione:: Available
Su ordine:: 2500
Inserisci la quantità:

Il prezzo attuale di IRFU3806PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,69 USD~~; ~~0,69 USD~~

10: ~~0,66 USD~~; ~~6,56 USD~~

100: ~~0,62 USD~~; ~~62,10 USD~~

500: ~~0,59 USD~~; ~~293,25 USD~~

1000: ~~0,55 USD~~; ~~552,00 USD~~

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IRFU3806PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes