IPA90R800C3

Mfr. #:: IPA90R800C3
Produttore:: Rochester Electronics, LLC
Descrizione:: Trans MOSFET N-CH 900V 6.9A 3-Pin TO-220FP Tube (Alt: IPA90R800C3)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPA90R800C3 Scheda dati
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: INFINEON

categoria di prodotto: Chip IC

Serie: CoolMOS C3

Confezione: Tubo

Alias parziali: IPA90R800C3XK IPA90R800C3XKSA1 SP000413718

Unità di peso: 0.211644 oz

Stile di montaggio: Foro passante

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-220-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 33 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 32 ns

Ora di alzarsi: 20 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 6.9 A

Vds-Drain-Source-Breakdown-Voltage: 900 V

Rds-On-Drain-Source-Resistenza: 800 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 400 ns

Tempo di ritardo all'accensione tipico: 70 ns

Qg-Gate-Carica: 42 nC

Modalità canale: Aumento

Tags: IPA90R8, IPA90, IPA9, IPA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA90R800C3 Descrizione

***Components: In a Tube of 50, N-Channel MOSFET, 6.9 A, 900 V, 3-Pin TO-220FP Infineon IPA90R800C3XKSA1

***ure Electronics: Single N-Channel 900 V 0.8 Ohm 42 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-220FP Tube

***et: Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-220FP

***et Europe: Trans MOSFET N-CH 900V 6.9A 3-Pin TO-220FP Tube

***ark: MOSFET, N CHANNEL, 900V, 6.9A, TO-220FP

*** Source Electronics: MOSFET N-CH 900V 6.9A TO220-3

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

***ment14 APAC: Prices include import duty and tax. MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.62ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:33W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:6.9A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.9A; Tensione Drain Source Vds:900V; Resistenza di Attivazione Rds(on):0.62ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:33W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:6.9A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:900V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Foro Passante; Tipo di Transistor:Power MOSFET

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPA90R800C3XKSA1 DISTI # IPA90R800C3XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 900V 6.9A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.3436 500:$1.5920 100:$2.0059 10:$2.4610 1:$2.7100
IPA90R800C3 DISTI # IPA90R800C3	Infineon Technologies AG	Trans MOSFET N-CH 900V 6.9A 3-Pin TO-220FP Tube (Alt: IPA90R800C3) RoHS: Compliant Min Qty: 500 Container: Tube	Asia - 0	500:$1.2540 1000:$1.2025 1500:$1.1862 2500:$1.1400 5000:$1.1254 12500:$1.0973 25000:$1.0705
IPA90R800C3 DISTI # SP000413718	Infineon Technologies AG	Trans MOSFET N-CH 900V 6.9A 3-Pin TO-220FP Tube (Alt: SP000413718) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.4829 10:€1.1529 25:€1.0689 50:€1.0359 100:€1.0189 500:€1.0089 1000:€0.9959
IPA90R800C3XK DISTI # IPA90R800C3XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA90R800C3XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$1.0839 1000:$1.0449 2000:$1.0069 3000:$0.9729 5000:$0.9559
IPA90R800C3 DISTI # 726-IPA90R800C3	Infineon Technologies AG	MOSFET N-Ch 900V 6.9A TO220FP-3 CoolMOS C3 RoHS: Compliant	0	1:$2.2200 10:$1.8900 100:$1.5100 500:$1.3200 1000:$1.1000
IPA90R800C3	Infineon Technologies AG	Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	489	1000:$0.8800 500:$0.9300 100:$0.9700 25:$1.0100 1:$1.0900
IPA90R800C3XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	185	1000:$0.8800 500:$0.9300 100:$0.9700 25:$1.0100 1:$1.0900
IPA90R800C3XKSA1 DISTI # 1107149P	Infineon Technologies AG	MOSFET N-CHANNEL 900V 6.9A TO220FP-3, TU	230	50:£1.1810 200:£1.0760 500:£1.0540
IPA90R800C3XKSA1 DISTI # IPA90R800C3XKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,900V,4.4A,33W,TO220FP	70	1:$2.0700 3:$1.7700 10:$1.4200 100:$1.2400
IPA90R800C3	Infineon Technologies AG	INSTOCK	639
IPA90R800C3	Infineon Technologies AG	900V,800m,6.9A,N-Channel Power MOSFET	500	1:$1.5500 100:$1.3000 500:$1.1500 1000:$1.1100
IPA90R800C3 DISTI # 1664007	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	0	1:$3.5200 10:$3.0000 100:$2.4000 500:$2.0900 1000:$1.7500 2500:$1.6200 5000:$1.6100

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPA90R500C3XKSA2 OMO.#: OMO-IPA90R500C3XKSA2	MOSFET
	Mfr.#: IPA90R340C3XKSA2 OMO.#: OMO-IPA90R340C3XKSA2	MOSFET
	Mfr.#: IPA90R800C3XKSA1 OMO.#: OMO-IPA90R800C3XKSA1	MOSFET LOW POWER_LEGACY
	Mfr.#: IPA90R500C3XKSA1 OMO.#: OMO-IPA90R500C3XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 900V 11A TO220-3
	Mfr.#: IPA90R1K2C OMO.#: OMO-IPA90R1K2C-1190	Nuovo e originale
	Mfr.#: IPA90R1K2C3(SP000413714 OMO.#: OMO-IPA90R1K2C3-SP000413714-1190	Nuovo e originale
	Mfr.#: IPA90R1K2C3(SP000413714) OMO.#: OMO-IPA90R1K2C3-SP000413714--1190	Nuovo e originale
	Mfr.#: IPA90R1K2C3XKSA1 OMO.#: OMO-IPA90R1K2C3XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 900V 5.1A 10-220FP
	Mfr.#: IPA90R500C OMO.#: OMO-IPA90R500C-1190	Nuovo e originale
	Mfr.#: IPA90R800C3 OMO.#: OMO-IPA90R800C3-1190	Trans MOSFET N-CH 900V 6.9A 3-Pin TO-220FP Tube (Alt: IPA90R800C3)

Disponibilità

Azione:: Available
Su ordine:: 1000
Inserisci la quantità:

Il prezzo attuale di IPA90R800C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,47 USD~~; ~~1,47 USD~~

10: ~~1,40 USD~~; ~~13,95 USD~~

100: ~~1,32 USD~~; ~~132,17 USD~~

500: ~~1,25 USD~~; ~~624,10 USD~~

1000: ~~1,17 USD~~; ~~1 174,80 USD~~

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IPA90R800C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes