IPW65R080CFDAFKSA1

Mfr. #:: IPW65R080CFDAFKSA1
Produttore:: Infineon Technologies
Descrizione:: RF Bipolar Transistors MOSFET N-Ch 650V 43.3A TO247-3
Ciclo vitale:: Nuovo da questo produttore.
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Maggiori informazioni:: IPW65R080CFDAFKSA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: IPW65R080

Confezione: Tubo

Alias parziali: IPW65R080CFDA IPW65R080CFDAXK SP000875806

Unità di peso: 1.340411 oz

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-247-3

Tecnologia: si

Numero di canali: 1 Channel

Tipo a transistor: 1 N-Channel

Id-Continuo-Scarico-Corrente: 43.3 A

Vds-Drain-Source-Breakdown-Voltage: 650 V

Rds-On-Drain-Source-Resistenza: 80 mOhms

Polarità del transistor: Canale N

Tags: IPW65R080CFDA, IPW65R08, IPW65R0, IPW65R, IPW65, IPW6, IPW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
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Step2:
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Step3:
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IPW65R080CFDAFKSA1 Descrizione

***ure Electronics: Single N-Channel 650 V 80 mOhm 161 nC CoolMOS Power Mosfet - TO-247-3

***p One Stop Japan: Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS

***ark: Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.072Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

IPW65R080CFDAFKSA1 Maggiori informazioni

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPW65R080CFDAFKSA1 DISTI # V99:2348_06378457	Infineon Technologies AG	Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	280	240:$7.5580 10:$8.8290 1:$9.5990
IPW65R080CFDAFKSA1 DISTI # IPW65R080CFDAFKSA1-ND	Infineon Technologies AG	MOSFET N-CH 700V 43.3A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	1563In Stock	240:$9.2271 10:$11.2220 1:$12.4700
IPW65R080CFDAFKSA1 DISTI # 31240601	Infineon Technologies AG	Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	280	10:$8.8290 1:$9.5990
IPW65R080CFDAXK DISTI # IPW65R080CFDAFKSA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$6.4900 480:$6.1900 960:$5.9900 1440:$5.7900 2400:$5.6900
IPW65R080CFDAFKSA1 DISTI # 13AC9099	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:43.3A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	0	1:$12.6400 10:$11.5200 25:$11.0400 50:$10.3800 100:$9.7300
IPW65R080CFDAFKSA1 DISTI # 726-IPW65R080CFDAFKS	Infineon Technologies AG	MOSFET N-Ch 650V 43.3A TO247-3 RoHS: Compliant	1401	1:$10.7900 10:$9.7500 25:$9.3000 100:$8.0800 250:$7.7100 500:$7.0300
IPW65R080CFDA DISTI # 726-IPW65R080CFDA	Infineon Technologies AG	MOSFET N-Ch 650V 43.3A TO247-3 RoHS: Compliant	158	1:$10.7900 10:$9.7500 25:$9.3000 100:$8.0800 250:$7.7100 500:$7.0300
IPW65R080CFDAFKSA1 DISTI # 2726080	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-247-3 RoHS: Compliant	140	1:$19.8800 10:$17.8900 240:$14.7100
IPW65R080CFDAFKSA1 DISTI # 2726080	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-247-3 RoHS: Compliant	161	1:£6.2100 5:£5.5200 10:£5.2400 50:£5.2200 100:£5.1900
IPW65R080CFDAFKSA1 DISTI # C1S322000254716	Infineon Technologies AG	Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	280	240:$7.5580 10:$8.8290 1:$9.5990

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPW65R080CFDA OMO.#: OMO-IPW65R080CFDA	MOSFET N-Ch 650V 43.3A TO247-3
	Mfr.#: IPW65R080CFDFKSA1 OMO.#: OMO-IPW65R080CFDFKSA1	MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
	Mfr.#: IPW65R080CFDAFKSA1 OMO.#: OMO-IPW65R080CFDAFKSA1	MOSFET N-Ch 650V 43.3A TO247-3
	Mfr.#: IPW65R080CFD 65F6080 OMO.#: OMO-IPW65R080CFD-65F6080-1190	Nuovo e originale
	Mfr.#: IPW65R080CFD(SP000745036 OMO.#: OMO-IPW65R080CFD-SP000745036-1190	Nuovo e originale
	Mfr.#: IPW65R080CFDA OMO.#: OMO-IPW65R080CFDA-1190	Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247
	Mfr.#: IPW65R080CFDA 65F6080A OMO.#: OMO-IPW65R080CFDA-65F6080A-1190	Nuovo e originale
	Mfr.#: IPW65R080CFDA IPW65R080C OMO.#: OMO-IPW65R080CFDA-IPW65R080C-1190	Nuovo e originale
	Mfr.#: IPW65R080CFDS OMO.#: OMO-IPW65R080CFDS-1190	Nuovo e originale
	Mfr.#: IPW65R080CFDAFKSA1 OMO.#: OMO-IPW65R080CFDAFKSA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 650V 43.3A TO247-3

Disponibilità

Azione:: Available
Su ordine:: 2500
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Il prezzo attuale di IPW65R080CFDAFKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~8,52 USD~~; ~~8,52 USD~~

10: ~~8,10 USD~~; ~~80,99 USD~~

100: ~~7,67 USD~~; ~~767,23 USD~~

500: ~~7,25 USD~~; ~~3 623,05 USD~~

1000: ~~6,82 USD~~; ~~6 819,80 USD~~

Iniziare con

IPW65R080CFDA 5
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IPW65R0 53
IPW65R 99
IPW65 102
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IPW65R080CFDAFKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes