SI4900DY-T1-GE3

Mfr. #:: SI4900DY-T1-GE3
Produttore:: Vishay
Descrizione:: RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI4900DY-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Maggiori informazioni:: SI4900DY-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Array

Serie: TrinceaFETR

Confezione: Nastro e bobina (TR)

Alias parziali: SI4900DY-GE3

Unità di peso: 0.006596 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 8-SOIC (0.154", 3.90mm Width)

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: 8-SO

Configurazione: Dual

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 3.1W

Tipo a transistor: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

Ingresso-Capacità-Ciss-Vds: 665pF @ 15V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 5.3A

Rds-On-Max-Id-Vgs: 58 mOhm @ 4.3A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Carica-Qg-Vgs: 20nC @ 10V

Pd-Power-Dissipazione: 2 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 10 ns

Ora di alzarsi: 15 ns 65 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 4.3 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Rds-On-Drain-Source-Resistenza: 58 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 20 ns 15 ns

Tempo di ritardo all'accensione tipico: 10 ns 15 ns

Modalità canale: Aumento

Tags: SI4900DY-T1, SI4900DY-T, SI4900D, SI4900, SI490, SI49, SI4

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4900DY-T1-GE3 Descrizione

***et Japan: Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R

***ure Electronics: MOSFET 60V 5.3A 3.1W 58mohm @ 10V

***nell: DUAL N CHANNEL MOSFET, 60V, 5.3A

***: DUAL N-CHANNEL 60-V (D-S) MOSF

***ark: COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes

SI4900DY-T1-GE3 Maggiori informazioni

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI4900DY-T1-GE3 DISTI # V72:2272_09216636	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 10:$0.8556 1:$0.9943
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2907In Stock	1000:$0.6118 500:$0.7750 100:$0.9993 10:$1.2640 1:$1.4300
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2907In Stock	1000:$0.6118 500:$0.7750 100:$0.9993 10:$1.2640 1:$1.4300
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.5544
SI4900DY-T1-GE3 DISTI # 27121565	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 14:$0.8556
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5239 5000:$0.5079 10000:$0.4869 15000:$0.4739 25000:$0.4609
SI4900DY-T1-GE3 DISTI # 23T8519	Vishay Intertechnologies	MOSFET Transistor, Dual N Channel, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V RoHS Compliant: Yes	6579	1:$1.4200 10:$1.2000 25:$1.1200 50:$1.0400 100:$0.9590 250:$0.9040 500:$0.8490
SI4900DY-T1-GE3 DISTI # 15R5113	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, 5.3A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$0.6200 1000:$0.5940 2000:$0.5400 4000:$0.4860 6000:$0.4680 10000:$0.4580
SI4900DY-T1-GE3 DISTI # 781-SI4900DY-GE3	Vishay Intertechnologies	MOSFET 60V 5.3A 3.1W 58mohm @ 10V RoHS: Compliant	2489	1:$1.2600 10:$1.0400 100:$0.7960 500:$0.6850 1000:$0.5400 2500:$0.5040
SI4900DY-T1-GE3 DISTI # 7103364	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 4.3A SOIC8, PK	80	10:£0.8360 50:£0.7240 100:£0.5760 250:£0.5360 500:£0.4640
SI4900DY-T1-GE3 DISTI # 7103364P	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 4.3A SOIC8, RL	190	50:£0.7240 100:£0.5760 250:£0.5360 500:£0.4640
SI4900DYT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4900DY-T1-GE3 DISTI # C1S803601729574	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 10:$0.8556
SI4900DY-T1-GE3 DISTI # 1858965RL	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	0	1:$2.0000 10:$1.6500 100:$1.2600 500:$1.0900 1000:$0.8550 2500:$0.7980
SI4900DY-T1-GE3 DISTI # 1858965	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	6579	1:$2.0000 10:$1.6500 100:$1.2600 500:$1.0900 1000:$0.8550 2500:$0.7980
SI4900DY-T1-GE3 DISTI # 1858965	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	6699	5:£0.9380 25:£0.7710 100:£0.6140 250:£0.5720 500:£0.4950

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3	MOSFET 60V 5.3A 3.1W
	Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3	MOSFET 60V 5.3A 3.1W 58mohm @ 10V
	Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V
	Mfr.#: SI4900DY-T1-E3-CUT TAPE OMO.#: OMO-SI4900DY-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI4900DY OMO.#: OMO-SI4900DY-1190	Nuovo e originale
	Mfr.#: SI4900DY-T1 OMO.#: OMO-SI4900DY-T1-1190	Nuovo e originale
	Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3-VISHAY	MOSFET 2N-CH 60V 5.3A 8-SOIC
	Mfr.#: SI4900DY-TI-E3 OMO.#: OMO-SI4900DY-TI-E3-1190	Nuovo e originale
	Mfr.#: SI4900DYE3 OMO.#: OMO-SI4900DYE3-1190	Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Disponibilità

Azione:: Available
Su ordine:: 5500
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Il prezzo attuale di SI4900DY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,44 USD~~; ~~0,44 USD~~

10: ~~0,42 USD~~; ~~4,21 USD~~

100: ~~0,40 USD~~; ~~39,87 USD~~

500: ~~0,38 USD~~; ~~188,30 USD~~

1000: ~~0,35 USD~~; ~~354,40 USD~~

Iniziare con

SI4900DY-T1 4
SI4900DY-T 5
SI4900D 7
SI4900 8
SI490 32
SI49 329
SI4 2994

SI4900DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes