PSMN018-100ESFQ

PSMN018-100ESFQ
Mfr. #:
PSMN018-100ESFQ
Produttore:
Nexperia
Descrizione:
MOSFET N-CHANNEL 100V 53A I2PAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PSMN018-100ESFQ Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
PSMN018, PSMN01, PSMN0, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN018-100ESF - NextPower 100 V, 18 mΩ N-channel MOSFET in I2PAK package
***ical
NextPower 100 V, 18 mohm N-channel MOSFET in I2PAK package
***i-Key
MOSFET N-CHANNEL 100V 53A I2PAK
***ark
Mosfet, N-Ch, 100V, 53A, Sot-226; Transistor Polarity:n Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 100V, 53A, SOT-226; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:111W; Transistor Case Style:SOT-226; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, N-CH, 100V, 53A, SOT-226; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:53A; Napięcie drenu / źródła Vds:100V; Rezystancja przewodzenia Rds(on):0.015ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.2V; Straty mocy Pd:111W; Rodzaj obudowy tranzystora:SOT-226; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
PSMN018-100ESFQ
DISTI # V72:2272_17598700
NexperiaNextPower 100 V, 18 mohm N-channel MOSFET in I2PAK package4994
  • 3000:$0.4982
  • 1000:$0.5074
  • 500:$0.5165
  • 250:$0.5256
  • 100:$0.5348
  • 25:$0.5440
  • 10:$0.6043
  • 1:$0.6617
PSMN018-100ESFQ
DISTI # V36:1790_17598700
NexperiaNextPower 100 V, 18 mohm N-channel MOSFET in I2PAK package0
    PSMN018-100ESFQ
    DISTI # PSMN018-100ESFQ-ND
    NexperiaMOSFET N-CHANNEL 100V 53A I2PAK
    RoHS: Compliant
    Min Qty: 5000
    Container: Tube
    Temporarily Out of Stock
    • 5000:$0.5246
    PSMN018-100ESFQ
    DISTI # 31081323
    NexperiaNextPower 100 V, 18 mohm N-channel MOSFET in I2PAK package4994
    • 3000:$0.4982
    • 1000:$0.5074
    • 500:$0.5165
    • 250:$0.5256
    • 100:$0.5348
    • 25:$0.5440
    • 14:$0.6043
    PSMN018-100ESFQ
    DISTI # PSMN018-100ESFQ
    NexperiaPSMN018-100ESF/SOT226/I2PAK - Tape and Reel (Alt: PSMN018-100ESFQ)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.4509
    • 25000:$0.4619
    • 15000:$0.4739
    • 10000:$0.4859
    • 5000:$0.4929
    PSMN018-100ESFQ
    DISTI # 771-PSMN018-100ESFQ
    NexperiaMOSFET PSMN018-100ESF SOT226/I2PAK0
    • 5000:$0.4990
    • 10000:$0.4800
    Immagine Parte # Descrizione
    PSMN018-80YS,115

    Mfr.#: PSMN018-80YS,115

    OMO.#: OMO-PSMN018-80YS-115

    MOSFET N-CHAN 80V 45A
    PSMN018-80YS

    Mfr.#: PSMN018-80YS

    OMO.#: OMO-PSMN018-80YS-1190

    Nuovo e originale
    PSMN018-80YS115

    Mfr.#: PSMN018-80YS115

    OMO.#: OMO-PSMN018-80YS115-1190

    Now Nexperia Power Field-Effect Transistor, 45A I(D), 80V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
    PSMN018-100ESFQ

    Mfr.#: PSMN018-100ESFQ

    OMO.#: OMO-PSMN018-100ESFQ-NEXPERIA

    MOSFET N-CHANNEL 100V 53A I2PAK
    PSMN018-100PSFQ

    Mfr.#: PSMN018-100PSFQ

    OMO.#: OMO-PSMN018-100PSFQ-NEXPERIA

    MOSFET N-CH 100V 53A TO220AB
    PSMN018-80YS,115

    Mfr.#: PSMN018-80YS,115

    OMO.#: OMO-PSMN018-80YS-115-NEXPERIA

    MOSFET N-CH 80V 45A LFPAK
    PSMN018-80YS,115-CUT TAPE

    Mfr.#: PSMN018-80YS,115-CUT TAPE

    OMO.#: OMO-PSMN018-80YS-115-CUT-TAPE-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di PSMN018-100ESFQ è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,68 USD
    0,68 USD
    10
    0,64 USD
    6,42 USD
    100
    0,61 USD
    60,87 USD
    500
    0,57 USD
    287,45 USD
    1000
    0,54 USD
    541,10 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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