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SPW12N50C3

SPW12N50C3
Mfr. #:
SPW12N50C3
Produttore:
Rochester Electronics, LLC
Descrizione:
IGBT Transistors MOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SPW12N50C3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Tags
SPW12, SPW1, SPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 560V 11.6A 3-Pin(3+Tab) TO-247
***ment14 APAC
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-93; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-218; Current Id Max:11.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:SOT-93; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulse Current Idm:38A; Termination Type:Through Hole; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
SPW12N50C3FKSA1
DISTI # SPW12N50C3FKSA1-ND		Infineon Technologies AGMOSFET N-CH 560V 11.6A TO-247
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    SPW12N50C3
    DISTI # SPW12N50C3    		Infineon Technologies AGTrans MOSFET N-CH 560V 11.6A 3-Pin TO-247 Tube - Bulk (Alt: SPW12N50C3)
    RoHS: Not Compliant
    Min Qty: 228
    Container: Bulk    		Americas - 0
    • 228:$1.4900
    • 230:$1.4900
    • 458:$1.3900
    • 1140:$1.3900
    • 2280:$1.2900
    SPW12N50C3XK
    DISTI # SPW12N50C3XK    		Infineon Technologies AG- Bulk (Alt: SPW12N50C3XK)
    Min Qty: 1087
    Container: Bulk    		Americas - 0
    • 1087:$0.3309
    • 1089:$0.3189
    • 2176:$0.3069
    • 5435:$0.2969
    • 10870:$0.2919
    SPW12N50C3IN
    DISTI # SPW12N50C3IN    		Infineon Technologies AG- Bulk (Alt: SPW12N50C3IN)
    Min Qty: 1087
    Container: Bulk    		Americas - 0
    • 1087:$0.3309
    • 1089:$0.3189
    • 2176:$0.3069
    • 5435:$0.2969
    • 10870:$0.2919
    SPW12N50C3FKSA1
    DISTI # SPW12N50C3FKSA1    		Infineon Technologies AG- Bulk (Alt: SPW12N50C3FKSA1)
    RoHS: Compliant
    Min Qty: 228
    Container: Bulk    		Americas - 0
    • 228:$1.4900
    • 230:$1.4900
    • 458:$1.3900
    • 1140:$1.3900
    • 2280:$1.2900
    SPW12N50C3
    DISTI # 726-SPW12N50C3    		Infineon Technologies AGMOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3
    RoHS: Compliant    		0
      SPW12N50C3Infineon Technologies AGPower Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
      RoHS: Compliant      		3505
      • 1000:$1.4500
      • 500:$1.5200
      • 100:$1.5900
      • 25:$1.6500
      • 1:$1.7800
      SPW12N50C3FKSA1Infineon Technologies AGPower Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
      RoHS: Compliant      		240
      • 1000:$1.4500
      • 500:$1.5200
      • 100:$1.5900
      • 25:$1.6500
      • 1:$1.7800
      SPW12N50C3XKInfineon Technologies AG 
      RoHS: Not Compliant      		380
      • 1000:$0.3000
      • 500:$0.3200
      • 100:$0.3300
      • 25:$0.3500
      • 1:$0.3700
      SPW12N50C3INInfineon Technologies AG 
      RoHS: Not Compliant      		369
      • 1000:$0.3000
      • 500:$0.3200
      • 100:$0.3300
      • 25:$0.3500
      • 1:$0.3700
      Immagine Parte # Descrizione
      SPW12N50C3

      Mfr.#: SPW12N50C3

      OMO.#: OMO-SPW12N50C3-126

      		 IGBT Transistors MOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3
      SPW12N50C3,12N50C3

      Mfr.#: SPW12N50C3,12N50C3

      OMO.#: OMO-SPW12N50C3-12N50C3-1190

      		 Nuovo e originale
      SPW12N50C3FKSA1

      Mfr.#: SPW12N50C3FKSA1

      OMO.#: OMO-SPW12N50C3FKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 560V 11.6A TO-247
      SPW12N50C3PB-FREE

      Mfr.#: SPW12N50C3PB-FREE

      OMO.#: OMO-SPW12N50C3PB-FREE-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      5500
      Inserisci la quantità:
      Il prezzo attuale di SPW12N50C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,43 USD
      2,43 USD
      10
      2,31 USD
      23,08 USD
      100
      2,19 USD
      218,70 USD
      500
      2,07 USD
      1 032,75 USD
      1000
      1,94 USD
      1 944,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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