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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FQB20N06LTM DISTI # FQB20N06LTM-ND | ON Semiconductor | MOSFET N-CH 60V 21A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB20N06TM DISTI # FQB20N06TM-ND | ON Semiconductor | MOSFET N-CH 60V 20A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB20N06LTM DISTI # FQB20N06LTM | ON Semiconductor | - Bulk (Alt: FQB20N06LTM) RoHS: Compliant Min Qty: 596 Container: Bulk | Americas - 0 |
|
| FQB20N06TM DISTI # 512-FQB20N06TM | ON Semiconductor | MOSFET 60V N-Channel QFET Logic Level RoHS: Compliant | 0 | |
| FQB20N06LTM DISTI # 512-FQB20N06LTM | ON Semiconductor | MOSFET 60V N-Channel QFET Logic Level RoHS: Compliant | 0 | |
| FQB20N06LTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 107 |
|
| FQB20N06TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 20A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1550 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: FQB27P06TM OMO.#: OMO-FQB27P06TM |
MOSFET 60V P-Channel QFET |
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Mfr.#: FQB25N33TM-F085 OMO.#: OMO-FQB25N33TM-F085 |
MOSFET 330V NCH MOSFET |
|
Mfr.#: FQB20N06TM |
MOSFET N-CH 60V 20A D2PAK |
|
Mfr.#: FQB20N60 OMO.#: OMO-FQB20N60-1190 |
Nuovo e originale |
|
|
Mfr.#: FQB22P10TM-BL OMO.#: OMO-FQB22P10TM-BL-1190 |
Nuovo e originale |
|
|
Mfr.#: FQB22P10TM-F085 |
MOSFET P-CH 100V 22A D2PAK |
|
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Mfr.#: FQB25N33TM-NB82122 OMO.#: OMO-FQB25N33TM-NB82122-1190 |
Nuovo e originale |
|
|
Mfr.#: FQB2N60TM |
MOSFET N-CH 600V 2.4A D2PAK |
|
|
Mfr.#: FQB2NA90TM |
MOSFET N-CH 900V 2.8A D2PAK |
|
|
Mfr.#: FQB27P06TM-CUT TAPE OMO.#: OMO-FQB27P06TM-CUT-TAPE-1190 |
Nuovo e originale |