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IPW65R190CFD

IPW65R190CFD
Mfr. #:
IPW65R190CFD
Produttore:
Infineon Technologies
Descrizione:
Darlington Transistors MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW65R190CFD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
IPW65R190CFD maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
CoolMOS CFD2
Confezione
Tubo
Alias ​​parziali
IPW65R190CFDFKSA1 IPW65R190CFDXK SP000905376
Unità di peso
1.340411 oz
Stile di montaggio
Foro passante
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
151 W
Tempo di caduta
6.4 ns
Ora di alzarsi
8.4 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
17.5 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
4 V
Rds-On-Drain-Source-Resistenza
190 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
68 nC
Tags
IPW65R190CF, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Switch Mode Power Supplies (SMPS)
Infineon Technologies offers a wide range of cost-effective products for consumer Switch Mode Power Supplies (SMPS). This includes high voltage MOSFETs, control IC's and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ 600V C6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification the OptiMOS™ 3 series offers extremely low on-state resistance and low capacitances. Infineon's new control ICs support topologies such as quasi-resonant flyback and LLC.Learn More
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
Infineon SMPS - High Power Topology
Infineon Technologies SMPS High Power Topology is suitable for power applications above 400W. Following the front end stage of an AC/DC rectifier, a DC/DC power converter is required to step down the bus voltage and provide a galvanically isolated and tightly regulated DC output (eg. 12V, 24V, 48V). While a wide range of isolated topologies are available, the phase-shifted full-bridge converter is more suitable for higher power application for reasons such as its inherent Zero Voltage Switching for the primary side switches.Learn More
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPW65R190CFD
DISTI # 30610570		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247
RoHS: Compliant		514
  • 480:$2.8178
  • 100:$2.9707
  • 50:$3.3915
  • 10:$4.0163
  • 6:$4.4880
IPW65R190CFDAFKSA1
DISTI # 31039088		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 100:$3.3600
  • 10:$3.8784
IPW65R190CFDFKSA1
DISTI # IPW65R190CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1200:$2.1893
  • 720:$2.5513
  • 240:$3.0942
  • 10:$3.7200
  • 1:$4.1400
IPW65R190CFDAFKSA1
DISTI # IPW65R190CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.0468
IPW65R190CFD
DISTI # C1S322000415991		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		514
  • 480:$2.2100
  • 100:$2.3300
  • 50:$2.6600
  • 10:$3.1500
  • 1:$3.5200
IPW65R190CFD
DISTI # IPW65R190CFD		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 (Alt: IPW65R190CFD)
RoHS: Compliant
Min Qty: 240		Asia - 240
  • 240:$2.1092
  • 480:$2.0087
  • 720:$1.9773
  • 1200:$1.8888
  • 2400:$1.8610
  • 6000:$1.8079
  • 12000:$1.7576
IPW65R190CFD
DISTI # IPW65R190CFDFKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R190CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$1.7900
  • 480:$1.6900
  • 960:$1.5900
  • 1440:$1.5900
  • 2400:$1.5900
IPW65R190CFD
DISTI # SP000905376		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 (Alt: SP000905376)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.8900
  • 10:€1.6900
  • 25:€1.5900
  • 50:€1.5900
  • 100:€1.4900
  • 500:€1.4900
  • 1000:€1.3900
IPW65R190CFDFKSA2
DISTI # IPW65R190CFDFKSA2		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R190CFDFKSA2)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDA    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW65R190CFDA)
    RoHS: Compliant
    Min Qty: 240    		Asia - 0
      IPW65R190CFDAFKSA1
      DISTI # IPW65R190CFDAFKSA1      		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R190CFDAFKSA1)
      RoHS: Compliant
      Min Qty: 240
      Container: Tube      		Americas - 0
      • 240:$2.4900
      • 480:$2.3900
      • 960:$2.3900
      • 1440:$2.2900
      • 2400:$2.1900
      IPW65R190CFDAFKSA1
      DISTI # SP000928268      		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928268)
      RoHS: Compliant
      Min Qty: 1      		Europe - 0
      • 1:€3.0900
      • 10:€2.4900
      • 25:€2.2900
      • 50:€2.1900
      • 100:€2.0900
      • 500:€2.0900
      • 1000:€1.9900
      IPW65R190CFDFKSA1
      DISTI # 85X6044      		Infineon Technologies AGMOSFET Transistor, N Channel, 17.5 A, 700 V, 0.445 ohm, 10 V, 4 V , RoHS Compliant: Yes0
        IPW65R190CFDAFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
        RoHS: Compliant        		240
        • 1000:$2.7100
        • 500:$2.8500
        • 100:$2.9700
        • 25:$3.0900
        • 1:$3.3300
        IPW65R190CFDFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
        RoHS: Compliant        		6
        • 1000:$1.9100
        • 500:$2.0100
        • 100:$2.1000
        • 25:$2.1900
        • 1:$2.3500
        IPW65R190CFD
        DISTI # 726-IPW65R190CFD        		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
        RoHS: Compliant        		0
        • 1:$3.3500
        • 10:$2.8500
        • 100:$2.4700
        IPW65R190CFDFKSA2
        DISTI # 726-IPW65R190CFDFKSA        		Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
        RoHS: Compliant        		0
        • 1:$3.3500
        • 10:$2.8500
        • 100:$2.4700
        IPW65R190CFDAFKSA1
        DISTI # 726-IPW65R190CFDAFKS        		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
        RoHS: Compliant        		187
        • 1:$4.7600
        • 10:$4.0400
        • 100:$3.5000
        IPW65R190CFDA
        DISTI # 726-IPW65R190CFDA        		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
        RoHS: Compliant        		11
        • 1:$4.7600
        • 10:$4.0400
        • 100:$3.5000
        IPW65R190CFDAFKSA1
        DISTI # 8577129        		Infineon Technologies AGMOSFET 650V 17A COOLMOS CFDA AUTO TO247, TU480
        • 240:£1.6600
        • 1200:£1.6270
        IPW65R190CFDFKSA1
        DISTI # 9064384P        		Infineon Technologies AGMOSFET N-CH 650V 17.5A COOLMOS TO247, TU96
        • 20:£1.9900
        • 80:£1.7700
        • 200:£1.6380
        • 400:£1.6050
        IPW65R190CFDFKSA1
        DISTI # 9064384        		Infineon Technologies AGMOSFET N-CH 650V 17.5A COOLMOS TO247, PK200
        • 4:£2.3950
        • 20:£1.9900
        • 80:£1.7700
        • 200:£1.6380
        • 400:£1.6050
        IPW65R190CFDFKSA1
        DISTI # IPW65R190CFDFKSA1        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,17.5A,151W,PG-TO247-348
        • 1:$3.6900
        • 3:$3.1900
        • 10:$2.5600
        • 30:$2.2300
        IPW65R190CFDFKSA1
        DISTI # 2443410        		Infineon Technologies AGMOSFET, N CH, 700V, 17.5A, TO-247-3
        RoHS: Compliant        		0
        • 1:$5.3100
        • 10:$4.5100
        • 100:$3.9100
        Immagine Parte # Descrizione
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        OMO.#: OMO-IPW65R080CFDFKSA1

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        Mfr.#: IPW65R019C7 65C7019

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        OMO.#: OMO-IPW65R150CFDAFKSA1-INFINEON-TECHNOLOGIES

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        Mfr.#: IPW65R660CFD 65F660

        OMO.#: OMO-IPW65R660CFD-65F660-1190

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        Disponibilità
        Azione:
        Available
        Su ordine:
        4000
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        Il prezzo attuale di IPW65R190CFD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        2,08 USD
        2,08 USD
        10
        1,98 USD
        19,81 USD
        100
        1,88 USD
        187,65 USD
        500
        1,77 USD
        886,15 USD
        1000
        1,67 USD
        1 668,00 USD
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