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IXTH8P50

IXTH8P50
Mfr. #:
IXTH8P50
Produttore:
Littelfuse
Descrizione:
MOSFET -8 Amps -500V 1.2 Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTH8P50 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
500 V
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
1.2 Ohms
Vgs th - Tensione di soglia gate-source:
5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
130 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
180 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
21.46 mm
Lunghezza:
16.26 mm
Serie:
IXTH8P50
Tipo di transistor:
1 P-Channel
Tipo:
MOSFET di potenza standard
Larghezza:
5.3 mm
Marca:
IXYS
Transconduttanza diretta - Min:
4 S
Tempo di caduta:
35 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
27 ns
Quantità confezione di fabbrica:
30
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
35 ns
Tempo di ritardo di accensione tipico:
33 ns
Unità di peso:
0.229281 oz
Tags
IXTH8, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 500 V 1.2 Ohm 180 W Power Mosfet - TO-247 AD
***ical
Trans MOSFET P-CH Si 500V 7A 3-Pin(3+Tab) TO-247AD
*** Electronics
MOSFET P-CH 500V 8A TO-247
***S
new, original packaged
***el Nordic
Contact for details
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247
***roFlash
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***icroelectronics
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.2 Ohm 29 nC 150 W Silicon Flange Mount Mosfet TO-247-3
***ark
MOSFET, N-CH, 600V, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 18A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.175ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Plus Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
***ure Electronics
N-Channel 600 V 0.28 O 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3
***el Electronic
0.5% Accuracy Low-Voltage Adjustable Precision Shunt Regulator 3-TO-92 -40 to 125
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 13A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***icroelectronics
N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package
***ical
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 170W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh, M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics SCT
Power MOSFETs, 600V, 20A, TO-247, Tube
***el Electronic
CAP CER 0.068UF 50V C0G RADIAL
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 37A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 37 A, 104 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Parte # Mfg. Descrizione Azione Prezzo
IXTH8P50
DISTI # IXTH8P50-ND		IXYS CorporationMOSFET P-CH 500V 8A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		128In Stock
  • 1020:$3.8165
  • 510:$4.3818
  • 120:$5.2299
  • 30:$5.7953
  • 1:$7.0700
IXTH8P50
DISTI # 747-IXTH8P50		IXYS CorporationMOSFET -8 Amps -500V 1.2 Rds
RoHS: Compliant		853
  • 1:$8.2600
  • 10:$7.3900
  • 25:$6.4300
  • 50:$6.3000
  • 100:$6.0600
  • 250:$5.1700
  • 500:$4.9100
  • 1000:$4.1400
IXTH8P50IXYS Corporation 56
  • 43:$5.5500
  • 12:$6.0000
  • 1:$9.0000
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RS2012P-471-D-T5-3

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 Thin Film Resistors - SMD 0.125W 470ohm 0.5% 25ppm AEC Q200
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 Standard LEDs - Through Hole InGaN Green 30 Degrees
HGTG40N60A4

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 IGBT 600V 75A 625W TO247
DSEP6-06AS

Mfr.#: DSEP6-06AS

OMO.#: OMO-DSEP6-06AS-IXYS-CORPORATION

 Rectifiers 6 Amps 600V
Disponibilità
Azione:
721
Su ordine:
2704
Inserisci la quantità:
Il prezzo attuale di IXTH8P50 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
6,43 USD
6,43 USD
10
5,84 USD
58,40 USD
25
5,26 USD
131,50 USD
50
5,00 USD
250,00 USD
100
4,75 USD
475,00 USD
250
4,36 USD
1 090,00 USD
500
3,98 USD
1 990,00 USD
1000
3,59 USD
3 590,00 USD
2500
3,55 USD
8 875,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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