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FQP8P10

FQP8P10
Mfr. #:
FQP8P10
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 100V P-Channel QFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQP8P10 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
530 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
65 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
QFET
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FQP8P10
Tipo di transistor:
1 P-Channel
Tipo:
MOSFET
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
4.3 S
Tempo di caduta:
35 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
110 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
20 ns
Tempo di ritardo di accensione tipico:
11 ns
Unità di peso:
0.063493 oz
Tags
FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***u
    M***u
    CA

    looks good thks

    2019-04-02
    V***n
    V***n
    RU

    Normal

    2019-01-09
***Components
In a Tube of 50, P-Channel MOSFET, 5.7 A, 100 V, 3-Pin TO-220 ON Semiconductor FQP8P10
***Semiconductor
Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220
*** Electronics
TRANSISTOR MOSFET P-CHAN E-MODE TO-220
***ical
Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail
***i-Key
MOSFET P-CH 100V 8A TO-220
***ure Electronics
100V, 8A, 0.53OHM, P-CHANNEL, TO-220
***ser
MOSFETs 100V P-Channel QFET
***inecomponents.com
100V P-Channel QFET®
***ark
Mosfet, P, To-220; Transistor Polarity:p Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W Rohs Compliant: No
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
Prices include import duty and tax. MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Id Max:-8A; Device Marking:FQP8P10; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-30V; Voltage Vgs Rds on Measurement:-10V
***nell
MOSFET, P, TO-220; Biegunowość tranzystora:Kanał P; Prąd ciągły Id drenu:8A; Napięcie drenu / źródła Vds:-100V; Rezystancja przewodzenia Rds(on):0.41ohm; Napięcie Vgs pomiaru Rds(on):-10V; Napięcie progowe Vgs:-4V; Straty mocy Pd:65W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:Lead (27-Jun-2018); Maks. prąd Id:-8A; Napięcie Vds, typ.:-100V; Napięcie Vgs pomiaru Rds on:-10V; Napięcie Vgs, maks.:-30V; Oznaczenie układu:FQP8P10; Prąd impulsowy Idm:32A; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +175°C
Parte # Mfg. Descrizione Azione Prezzo
FQP8P10
DISTI # V36:1790_06301292		ON SemiconductorQF -100V 530MOHM TO2200
  • 1000000:$0.3139
  • 500000:$0.3148
  • 100000:$0.4927
  • 10000:$0.9130
  • 1000:$0.9900
FQP8P10
DISTI # FQP8P10FS-ND		ON SemiconductorMOSFET P-CH 100V 8A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1031In Stock
  • 5000:$0.4185
  • 3000:$0.4406
  • 1000:$0.4720
  • 100:$0.7238
  • 25:$0.8812
  • 10:$0.9280
  • 1:$1.0400
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 1		Europe - 200
  • 1000:€0.3229
  • 500:€0.3479
  • 100:€0.3769
  • 50:€0.4119
  • 25:€0.4529
  • 10:€0.5029
  • 1:€0.5659
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 1985
  • 500:$0.3209
  • 250:$0.3289
  • 150:$0.3339
  • 100:$0.3379
  • 50:$0.3399
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 715
Container: Bulk		Americas - 0
  • 7150:$0.4319
  • 3575:$0.4429
  • 2145:$0.4479
  • 1430:$0.4539
  • 715:$0.4569
FQP8P10.
DISTI # 14J0096		ON SemiconductorMOSFET, P, TO-220,Transistor Polarity:P Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,Power Dissipation Pd:65W RoHS Compliant: No3259
  • 1000:$0.4550
  • 500:$0.5760
  • 100:$0.6510
  • 10:$0.8480
  • 1:$1.0000
FQP8P10.
DISTI # 27AC5844		Fairchild Semiconductor CorporationQF -100V 530MOHM TO220 ROHS COMPLIANT: YES0
  • 500:$0.3310
  • 250:$0.3390
  • 150:$0.3440
  • 100:$0.3480
  • 1:$0.3500
FQP8P10
DISTI # 512-FQP8P10		ON SemiconductorMOSFET 100V P-Channel QFET
RoHS: Compliant		2285
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6450
  • 500:$0.5700
  • 1000:$0.4500
FQP8P10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		6708
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
FQP8P10
DISTI # 8075879		ON SemiconductorMOSFETFAIRCHILDFQP8P10, PK1150
  • 1000:£0.3200
  • 500:£0.3740
  • 100:£0.4580
  • 50:£0.5270
  • 10:£0.5960
FQP8P10.
DISTI # 4388215		ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant		4254
  • 1000:$0.6920
  • 500:$0.8770
  • 100:$0.9920
  • 10:$1.3000
  • 1:$1.5200
FQP8P10.
DISTI # 4388215		ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant		4272
  • 500:£0.4440
  • 250:£0.4730
  • 100:£0.5020
  • 10:£0.7100
  • 1:£0.8800
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Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di FQP8P10 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,99 USD
0,99 USD
10
0,84 USD
8,40 USD
100
0,64 USD
64,50 USD
500
0,57 USD
285,00 USD
1000
0,45 USD
450,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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