FDMS3606S

FDMS3606S
Mfr. #:
FDMS3606S
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET DUAL N-CH. ER TRENCH MO
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDMS3606S Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
Power-56-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Configurazione:
Dual
Nome depositato:
PowerTrench
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
6 mm
Serie:
FDMS3606S
Tipo di transistor:
2 N-Channel
Larghezza:
5 mm
Marca:
ON Semiconductor / Fairchild
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Unità di peso:
0.006032 oz
Tags
FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rchild Semiconductor
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***nell
MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:27W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
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Contact for details
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***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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*** Electronic Components
MOSFET DUAL N-CH. ER TRENCH MO
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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MOSFET 30V 35A 36W 6.0mohm @ 10V
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N-Ch PowerPAK SO-8 BWL 30V 6mohm@10V
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Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.048ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:20V; Power Dissipation, Pd:4.2W ;RoHS Compliant: Yes
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Single N-Channel 30 V 0.0079 Ohm 41.7 W SMT Power Mosfet - PowerPAK-SO-8
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Transistor MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:41.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Parte # Mfg. Descrizione Azione Prezzo
FDMS3606S
DISTI # FDMS3606SCT-ND
ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS3606S
    DISTI # FDMS3606SDKR-ND
    ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS3606S
      DISTI # FDMS3606STR-ND
      ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.7084
      FDMS3606S
      DISTI # FDMS3606S
      ON SemiconductorTrans MOSFET N-CH 30V 13A/27A 8-Pin PQFN T/R (Alt: FDMS3606S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Asia - 3000
      • 3000:$0.8501
      • 6000:$0.8174
      • 9000:$0.7871
      • 15000:$0.7590
      • 30000:$0.7328
      • 75000:$0.7084
      • 150000:$0.6968
      FDMS3606S
      DISTI # FDMS3606S
      ON SemiconductorTrans MOSFET N-CH 30V 13A/27A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3606S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.7839
      • 6000:$0.7789
      • 12000:$0.7689
      • 18000:$0.7589
      • 30000:$0.7399
      FDMS3606S
      DISTI # 68X0377
      ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
      • 1:$0.9200
      FDMS3606SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
      RoHS: Compliant
      150000
      • 1000:$0.8800
      • 500:$0.9300
      • 100:$0.9700
      • 25:$1.0100
      • 1:$1.0900
      FDMS3606S
      DISTI # 512-FDMS3606S
      ON SemiconductorMOSFET DUAL N-CH. ER TRENCH MO
      RoHS: Compliant
      2975
      • 1:$1.5100
      • 10:$1.2800
      • 100:$0.9900
      • 500:$0.8750
      • 1000:$0.6900
      Immagine Parte # Descrizione
      FDMS1D5N03

      Mfr.#: FDMS1D5N03

      OMO.#: OMO-FDMS1D5N03

      MOSFET PT9 30V/12V Nch PowerTrench SyncFET
      FDMS3600AS

      Mfr.#: FDMS3600AS

      OMO.#: OMO-FDMS3600AS

      MOSFET DUAL N-CH. ER TRENCH MO
      FDMS3624S

      Mfr.#: FDMS3624S

      OMO.#: OMO-FDMS3624S

      MOSFET 25V PowerTrench Power Stage
      FDMS8320LDC

      Mfr.#: FDMS8320LDC

      OMO.#: OMO-FDMS8320LDC

      MOSFET 40V 130A Dual Cool PowerTrench MOSFET
      FDMS8350L

      Mfr.#: FDMS8350L

      OMO.#: OMO-FDMS8350L

      MOSFET FET 40V 0.85 MOHM PQFN56
      FDMS86322

      Mfr.#: FDMS86322

      OMO.#: OMO-FDMS86322

      MOSFET 80V N-Channel PowerTrench MOSFET
      FDMS003N08C

      Mfr.#: FDMS003N08C

      OMO.#: OMO-FDMS003N08C

      MOSFET FET 80V 147A 3.1 mOhm
      FDMS36101L

      Mfr.#: FDMS36101L

      OMO.#: OMO-FDMS36101L-1190

      - Bulk (Alt: FDMS36101L)
      FDMS86101_F065

      Mfr.#: FDMS86101_F065

      OMO.#: OMO-FDMS86101-F065-1190

      Nuovo e originale
      FDMS86368-F085

      Mfr.#: FDMS86368-F085

      OMO.#: OMO-FDMS86368-F085-ON-SEMICONDUCTOR

      MOSFET N-CH 80V 80A POWER56
      Disponibilità
      Azione:
      Available
      Su ordine:
      1985
      Inserisci la quantità:
      Il prezzo attuale di FDMS3606S è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,32 USD
      1,32 USD
      10
      1,13 USD
      11,30 USD
      100
      0,87 USD
      86,80 USD
      500
      0,77 USD
      383,50 USD
      1000
      0,60 USD
      605,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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