PD20010-E

PD20010-E
Mfr. #:
PD20010-E
Produttore:
STMicroelectronics
Descrizione:
TRANS RF N-CH FET POWERSO-10RF
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PD20010-E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PD20010-E maggiori informazioni PD20010-E Product Details
Attributo del prodotto
Valore attributo
Produttore
ST
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
PD20010-E
Tipo
MOSFET di potenza RF
Confezione
Tubo
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerSO-10RF (Formed Lead)
Tecnologia
si
Guadagno
11 dB
Potenza di uscita
10 W
Pd-Power-Dissipazione
59 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 65 C
Frequenza operativa
2 GHz
Vgs-Gate-Source-Voltage
15 V
Id-Continuo-Scarico-Corrente
5 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Polarità del transistor
Canale N
Tags
PD20010, PD2001, PD200, PD20, PD2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 40V 5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
***ark
Rf Transistor, 40V, 2Ghz, Powerso-10Rf; Drain Source Voltage Vds:40V; Continuous Drain Current Id:5A; Power Dissipation Pd:59W; Operating Frequency Min:-; Operating Frequency Max:2Ghz; Rf Transistor Case:powerso-10Rf; Product Range:-Rohs Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
PD20010-E
DISTI # 26562460
STMicroelectronicsTrans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant
200
  • 1000:$11.6021
  • 500:$12.6504
  • 250:$13.5173
  • 100:$14.2128
  • 25:$16.1381
  • 10:$16.8336
  • 1:$18.3053
PD20010-E
DISTI # 497-13044-5-ND
STMicroelectronicsTRANS RF N-CH FET POWERSO-10RF
RoHS: Compliant
Min Qty: 1
Container: Tube
496In Stock
  • 500:$12.5425
  • 100:$14.0995
  • 50:$16.0026
  • 1:$18.1700
PD20010-E
DISTI # C1S730200530721
STMicroelectronicsTrans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant
200
  • 100:$13.2000
  • 50:$15.9000
  • 25:$17.2000
  • 10:$18.7000
  • 5:$19.2000
  • 1:$25.6000
PD20010-E
DISTI # PD20010-E
STMicroelectronicsTrans MOSFET N-CH 40V 5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD20010-E)
RoHS: Compliant
Min Qty: 400
Container: Bag
Americas - 0
  • 400:$12.8900
  • 800:$12.2900
  • 1600:$11.7900
  • 2400:$11.1900
  • 4000:$10.9900
PD20010-E
DISTI # 45AC7466
STMicroelectronicsTrans MOSFET N-CH 40V 5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube - Bulk (Alt: 45AC7466)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$22.8200
  • 10:$21.3000
  • 25:$20.5800
  • 50:$19.5900
  • 100:$18.5900
  • 250:$17.8700
  • 500:$16.9700
PD20010-E
DISTI # 45AC7466
STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF,Drain Source Voltage Vds:40V,Continuous Drain Current Id:5A,Power Dissipation Pd:59W,Operating Frequency Min:-,Operating Frequency Max:2GHz,RF Transistor Case:PowerSO-10RF,Product Range:-, RoHS Compliant: Yes100
  • 1:$22.8200
  • 10:$21.3000
  • 25:$20.5800
  • 50:$19.5900
  • 100:$18.5900
  • 250:$17.8700
  • 500:$16.9700
PD20010-E
DISTI # 511-PD20010-E
STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant
325
  • 1:$18.1600
  • 10:$16.7000
  • 25:$16.0100
  • 100:$14.1000
  • 250:$13.4100
  • 500:$12.5500
PD20010TR-E
DISTI # 511-PD20010TR-E
STMicroelectronicsRF MOSFET Transistors RF power tran LdmoST N-chann
RoHS: Compliant
0
  • 600:$12.5500
PD20010-E
DISTI # PD20010-E
STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 400:$12.5600
  • 500:$11.8900
  • 1000:$11.2800
PD20010-E
DISTI # 2807337
STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF
RoHS: Compliant
271
  • 1:£13.9100
  • 5:£13.6400
  • 10:£12.4100
  • 50:£11.5000
  • 100:£10.5800
PD20010-E
DISTI # 2807337
STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF
RoHS: Compliant
271
  • 1:$28.7500
  • 50:$25.3300
  • 100:$22.3200
  • 500:$19.8500
Immagine Parte # Descrizione
PD20010-E

Mfr.#: PD20010-E

OMO.#: OMO-PD20010-E

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PD20010-E

Mfr.#: PD20010-E

OMO.#: OMO-PD20010-E-STMICROELECTRONICS

TRANS RF N-CH FET POWERSO-10RF
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di PD20010-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
13,02 USD
13,02 USD
10
12,37 USD
123,69 USD
100
11,72 USD
1 171,80 USD
500
11,07 USD
5 533,50 USD
1000
10,42 USD
10 416,00 USD
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