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A2G35S200-01SR3

A2G35S200-01SR3
Mfr. #:
A2G35S200-01SR3
Produttore:
NXP / Freescale
Descrizione:
RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A2G35S200-01SR3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2G35S200-01SR3 DatasheetA2G35S200-01SR3 Datasheet (P4-P6)A2G35S200-01SR3 Datasheet (P7-P9)A2G35S200-01SR3 Datasheet (P10)
ECAD Model:
Maggiori informazioni:
A2G35S200-01SR3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
MACOM
Categoria di prodotto:
Amplificatore RF
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PQFN-20
Tipo:
2-Stage Amplifier
Frequenza operativa:
2.5 GHz to 3.5 GHz
Guadagno:
27 dB
Tensione di alimentazione operativa:
11 V
Corrente di alimentazione operativa:
25 mA
Temperatura massima di esercizio:
+ 85 C
Confezione:
Bobina
Marca:
MACOM
Tipologia di prodotto:
Amplificatore RF
Quantità confezione di fabbrica:
500
sottocategoria:
Circuiti integrati wireless e RF
Tags
A2G3, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
AIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 40 W AVG., 48 V, REEL 13" Q1 NDP, TR
***W
RF Power Transistor,3400 to 3600 MHz, 180 W, Typ Gain in dB is 16.1 @ 3500 MHz, 48 V, GaN, SOT1828
***et
RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Parte # Mfg. Descrizione Azione Prezzo
A2G35S200-01SR3
DISTI # 568-15206-1-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		246In Stock
  • 10:$134.7860
  • 1:$141.4800
A2G35S200-01SR3
DISTI # 568-15206-6-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		246In Stock
  • 10:$134.7860
  • 1:$141.4800
A2G35S200-01SR3
DISTI # 568-15206-2-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$123.4358
A2G35S200-01SR3
DISTI # 01AC8235		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR, 3400-3800 MHZ, 40 W AVG., 48 V0
  • 100:$116.0200
  • 50:$123.4400
  • 25:$125.3000
  • 10:$127.1500
  • 5:$130.8600
  • 1:$134.5800
A2G35S200-01SR3
DISTI # 841-A2G35S200-01SR3		NXP SemiconductorsRF Amplifier A2G35S200-01S/CFM2F///REEL 13 Q1 NDP
RoHS: Compliant		0
  • 250:$139.2100
Immagine Parte # Descrizione
A2G35S200-01SR3

Mfr.#: A2G35S200-01SR3

OMO.#: OMO-A2G35S200-01SR3

 RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
A2G35S200-01SR3

Mfr.#: A2G35S200-01SR3

OMO.#: OMO-A2G35S200-01SR3-NXP-SEMICONDUCTORS

 AIRFAST RF POWER GAN TRANSISTOR
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di A2G35S200-01SR3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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