BUK7K52-60EX

Mfr. #:: BUK7K52-60EX
Produttore:: Nexperia
Descrizione:: MOSFET Dual N-channel 60V Mosfet
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BUK7K52-60EX Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: BUK7K52-60EX maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Nexperia

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: LFPAK33-8

Numero di canali:: 2 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 15.4 A

Rds On - Resistenza Drain-Source:: 45 mOhms

Vgs th - Tensione di soglia gate-source:: 3 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 9.2 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 32 W

Configurazione:: Dual

Modalità canale:: Aumento

Qualificazione:: AEC-Q101

Confezione:: Bobina

Tipo di transistor:: 2 N-Channel

Marca:: Nexperia

Tempo di caduta:: 5.4 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 5.1 ns

Quantità confezione di fabbrica:: 1500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 8.4 ns

Tempo di ritardo di accensione tipico:: 4.3 ns

Tags: BUK7K5, BUK7K, BUK7, BUK

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BUK7K52-60EX Descrizione

***peria: BUK7K52-60E - Dual N-channel 60 V, 45 mΩ standard level MOSFET

*** Stop Electro: Power Field-Effect Transistor, 20.7A I(D), N-Channel, Metal-oxide Semiconductor FET

***et Europe: Transistor MOSFET Array Dual N-CH 60V 15.4A 8-Pin LFPAK-56D T/R

***ical: Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK T/R

***i-Key: MOSFET N-CH 60V 15A TO252

***ment14 APAC: MOSFET,N CH,W DIODE,60V,15A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V

***: 60V N-CHANNEL

***ure Electronics: Dual N-Channel 60 V 43 mOhm SMT StripFET F3 Power Mosfet - PowerFLAT-5x6

***Yang: Trans MOSFET Array Dual N-CH 60V 20A 8-Pin Power Flat T/R - Tape and Reel

***ment14 APAC: MOSFET, DUAL N-CH, 60V, 20A, 52W; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Source Voltage Vds:60V; On Resistance

***nell: MOSFET, DUAL N-CH, 60V, 20A, 52W; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 52W; Transistor Case Style: PowerFLAT; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: STripFET F3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***emi: N-Channel PowerTrench® MOSFET, 60V, 18A, 55mΩ

***ure Electronics: N-Channel 60 V 55 mOhm Surface Mount PowerTrench Mosfet - TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 18A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; Package / Case:TO-252; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***ure Electronics: N-Channel 60 V 40 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3

***itex: Transistor: N-MOSFET; unipolar; 60V; 20A; 0.04ohm; 42W; -55+150 deg.C; SMD; TO252(DPAK); AEC-Q100

***p One Stop: Trans MOSFET N-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252 T/R

***emi: N-Channel Power Trench® MOSFET 60V, 17.6A, 26mΩ

***ical: Trans MOSFET N-CH 60V 17.6A Automotive 8-Pin Power 56 EP T/R

***ark: N-Channel Powertrench Mosfet / Tape Reel

***r Electronics: Power Field-Effect Transistor, 17.6A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: IC CPU SUPERV 4K EEPROM 8-SOIC

***emi: N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ

***ure Electronics: N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.

BUK7K52-60EX Maggiori informazioni

Automotive MOSFETs: Nexperia Automotive MOSFETs comprise a range of AEC-Q101 qualified devices that meet the stringent standards set by the automotive industry. These Nexperia automotive devices are designed for an operating environment that is far more hostile than that of power MOSFETs used in home and portable applications, and are ideal for thermally demanding environments due to their +175°C rating.

BUKx Automotive MOSFETs: Nexperia BUKx Automotive MOSFETs offer logic level N-channel MOSFETs featuring TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BUK7K52-60EX DISTI # V72:2272_06521981	Nexperia	Trans MOSFET N-CH 60V 15.4A Automotive 8-Pin LFPAK-D T/R	0
BUK7K52-60EX DISTI # 1727-1892-2-ND	Nexperia	MOSFET 2N-CH 60V 15.4A LFPAK RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	On Order	10500:$0.2919 7500:$0.2963 3000:$0.3183 1500:$0.3512
BUK7K52-60EX DISTI # 1727-1892-1-ND	Nexperia	MOSFET 2N-CH 60V 15.4A LFPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$0.4522 100:$0.5720 10:$0.7460 1:$0.8500
BUK7K52-60EX DISTI # 1727-1892-6-ND	Nexperia	MOSFET 2N-CH 60V 15.4A LFPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$0.4522 100:$0.5720 10:$0.7460 1:$0.8500
BUK7K52-60EX DISTI # BUK7K52-60EX	Nexperia	Trans MOSFET N-CH 60V 17A 8-Pin LFPAK56D T/R (Alt: BUK7K52-60EX) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 0
BUK7K52-60EX DISTI # BUK7K52-60EX	Nexperia	Trans MOSFET N-CH 60V 17A 8-Pin LFPAK56D T/R (Alt: BUK7K52-60EX) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.2744 75000:$0.2814 30000:$0.2851 15000:$0.2888 9000:$0.2966 6000:$0.3049 3000:$0.3136
BUK7K52-60EX DISTI # BUK7K52-60EX	Nexperia	Trans MOSFET N-CH 60V 17A 8-Pin LFPAK56D T/R - Tape and Reel (Alt: BUK7K52-60EX) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2639 15000:$0.2699 9000:$0.2769 6000:$0.2849 3000:$0.2879
BUK7K52-60EX DISTI # 771-BUK7K52-60EX	Nexperia	MOSFET Dual N-channel 60V Mosfet RoHS: Compliant	0	1:$0.8200 10:$0.6810 100:$0.4390 1000:$0.3520 1500:$0.2970 9000:$0.2860 24000:$0.2750

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BUK7K5R6-30E,115 OMO.#: OMO-BUK7K5R6-30E-115	MOSFET Dual N-channel 30 V 5.6 mo FET
	Mfr.#: BUK7K5R1-30E,115 OMO.#: OMO-BUK7K5R1-30E-115	MOSFET Dual N-channel 30 V 5.1 mo FET
	Mfr.#: BUK7K52-60EX OMO.#: OMO-BUK7K52-60EX	MOSFET Dual N-channel 60V Mosfet
	Mfr.#: BUK7K52-60EX OMO.#: OMO-BUK7K52-60EX-NEXPERIA	MOSFET 2N-CH 60V 15.4A LFPAK
	Mfr.#: BUK7K5R1-30E OMO.#: OMO-BUK7K5R1-30E-1190	Nuovo e originale
	Mfr.#: BUK7K5R1-30E,115 OMO.#: OMO-BUK7K5R1-30E-115-NEXPERIA	MOSFET 2N-CH 30V 40A LFPAK56D
	Mfr.#: BUK7K5R6-30E,115 OMO.#: OMO-BUK7K5R6-30E-115-NEXPERIA	MOSFET 2N-CH 30V 40A LFPAK56D

Disponibilità

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Su ordine:: 1000
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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,82 USD~~; ~~0,82 USD~~

10: ~~0,68 USD~~; ~~6,81 USD~~

100: ~~0,44 USD~~; ~~43,90 USD~~

1000: ~~0,35 USD~~; ~~352,00 USD~~

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BUK7K52-60EX

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes