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A2C25S12M3-F

A2C25S12M3-F
Mfr. #:
A2C25S12M3-F
Produttore:
STMicroelectronics
Descrizione:
IGBT TRENCH 1200V 25A ACEPACK2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A2C25S12M3-F Scheda dati
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A2C25S12M3-F maggiori informazioni A2C25S12M3-F Product Details
Attributo del prodotto
Valore attributo
Tags
A2C25, A2C2, A2C
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
A2C25S12M3-F Series 1200 V 25 A Trench Gate Field-Stop IGBT - ACEPACK™ 2
***ical
Trans IGBT Module N-CH 1200V 25A 197000mW 35-Pin ACEPACK-2 Frame
***ark
Acepack Power Modules Rohs Compliant: Yes
***i-Key
IGBT TRENCH 1200V 25A ACEPACK2
***ronik
CIB 1200V 25A ACEPACK2
***et Europe
PTD HIGH VOLTAGE
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 25A; Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:197W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:ACEPACK 2 M Series; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT, MODULO, CA-N, 1.2KV, 25A; Polarità Transistor:Canale N; Corrente di Collettore CC:25A; Tensione Saturaz Collettore-Emettitore Vce(on):1.95V; Dissipazione di Potenza Pd:197W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:ACEPACK 2 M Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
ACEPACK™ IGBT Modules
STMicroelectronics​ ACEPACK™ IGBT Modules are a family of new plastic power modules developed to address power management solutions and industrial applications. The ACEPACK™ 1 and ACEPACK™ 2 packages are introduced with both Converter Inverter Brake (CIB) and six-pack topologies that integrate the advanced trench-gate field-stop technologies. These ACEPACK IGBT-modules feature ACEPACK 1 or ACEPACK 2 power modules, integrated Negative Temperature Coefficient (NTC), and CIB or six-pack topology. These modules cover the appropriate use of the new IGBT-technology by representing the best compromise between conduction and switching-loss to maximize efficiency by 20kHz. These IGBT modules are ideal for application in industrial motor drives, solar panels, welding, and inverters.Learn More
Parte # Mfg. Descrizione Azione Prezzo
A2C25S12M3-F
DISTI # V99:2348_19042936		STMicroelectronicsA2C25S12M3-F14
  • 250:$40.1599
  • 100:$41.1800
  • 25:$46.2900
  • 10:$48.3100
  • 5:$50.6100
  • 1:$51.7400
A2C25S12M3-F
DISTI # V36:1790_19103896		STMicroelectronicsA2C25S12M3-F0
  • 18000:$33.7800
  • 9000:$33.7900
  • 1800:$36.8500
  • 180:$44.6300
  • 18:$46.0900
A2C25S12M3-F
DISTI # 497-17743-ND		STMicroelectronicsIGBT TRENCH 1200V 25A ACEPACK2
RoHS: Not compliant
Min Qty: 1
Container: Tray		14In Stock
  • 108:$44.1525
  • 36:$48.7200
  • 18:$50.8517
  • 1:$54.5100
A2C25S12M3-F
DISTI # 26553366		STMicroelectronicsA2C25S12M3-F14
  • 250:$40.1599
  • 100:$41.1800
  • 25:$46.2900
  • 10:$48.3100
  • 5:$50.6100
  • 1:$51.7400
A2C25S12M3-F
DISTI # A2C25S12M3-F		STMicroelectronicsPTD HIGH VOLTAGE (Alt: A2C25S12M3-F)
RoHS: Compliant
Min Qty: 1		Europe - 36
  • 1000:€36.4900
  • 500:€37.1900
  • 100:€37.9900
  • 50:€38.5900
  • 25:€39.5900
  • 10:€41.7900
  • 1:€42.3900
A2C25S12M3-F
DISTI # A2C25S12M3-F		STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: A2C25S12M3-F)
RoHS: Compliant
Min Qty: 14
Container: Tray		Americas - 14
  • 140:$35.7900
  • 70:$36.6900
  • 42:$37.5900
  • 28:$38.5900
  • 14:$39.6900
A2C25S12M3-F
DISTI # 47AC8731		STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 25A,Transistor Polarity:N Channel,DC Collector Current:25A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:197W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes15
  • 100:$42.4700
  • 50:$44.6700
  • 25:$46.8600
  • 10:$48.9200
  • 5:$51.2700
  • 1:$52.4300
A2C25S12M3-F.
DISTI # 95AC8074		STMicroelectronicsACEPACK POWER MODULES ROHS COMPLIANT: YES14
  • 100:$42.4700
  • 50:$44.6700
  • 25:$46.8600
  • 10:$48.9200
  • 5:$51.2700
  • 1:$52.4300
A2C25S12M3-F
DISTI # 511-A2C25S12M3-F		STMicroelectronicsIGBT Modules PTD HIGH VOLTAGE
RoHS: Compliant		14
  • 1:$51.9100
  • 5:$50.7600
  • 10:$48.4400
  • 25:$46.4000
  • 100:$42.0500
A2C25S12M3-F
DISTI # 2832456		STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 25A
RoHS: Compliant		15
  • 108:$66.5400
  • 36:$73.4300
  • 18:$76.6400
  • 1:$82.1500
A2C25S12M3-F
DISTI # 2832456		STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 25A15
  • 50:£32.5700
  • 10:£35.4000
  • 5:£38.7300
  • 1:£39.6000
A2C25S12M3-F
DISTI # XSKDRABV0045861		STMicroelectronicsDifferential Multiplexer, 1 Func, 4 Channel,CMOS,PQCC16
RoHS: Compliant		22 in Stock0 on Order
  • 22:$55.6000
  • 14:$59.5700
Immagine Parte # Descrizione
A2C25S12M3

Mfr.#: A2C25S12M3

OMO.#: OMO-A2C25S12M3

 IGBT Modules PTD HIGH VOLTAGE
A2C25S12M3-F

Mfr.#: A2C25S12M3-F

OMO.#: OMO-A2C25S12M3-F

 IGBT Modules PTD HIGH VOLTAGE
A2C25S12M3-F

Mfr.#: A2C25S12M3-F

OMO.#: OMO-A2C25S12M3-F-STMICROELECTRONICS

 IGBT TRENCH 1200V 25A ACEPACK2
A2C25S12M3

Mfr.#: A2C25S12M3

OMO.#: OMO-A2C25S12M3-STMICROELECTRONICS

 IGBT TRENCH 1200V 25A ACEPACK2
Disponibilità
Azione:
Available
Su ordine:
2500
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