IXTQ44N50P

IXTQ44N50P
Mfr. #:
IXTQ44N50P
Produttore:
Littelfuse
Descrizione:
MOSFET 44 Amps 500V 0.14 Ohm Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTQ44N50P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTQ44N50P DatasheetIXTQ44N50P Datasheet (P4-P5)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-3P-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
500 V
Id - Corrente di scarico continua:
44 A
Rds On - Resistenza Drain-Source:
140 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
650 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
20.3 mm
Lunghezza:
15.8 mm
Serie:
IXTQ44N50
Tipo di transistor:
1 N-Channel
Larghezza:
4.9 mm
Marca:
IXYS
Tempo di caduta:
21 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
27 ns
Quantità confezione di fabbrica:
30
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
75 ns
Tempo di ritardo di accensione tipico:
25 ns
Unità di peso:
0.194007 oz
Tags
IXTQ44, IXTQ4, IXTQ, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
MOSFET N-CH 500V 44A TO-3P
***el Nordic
Contact for details
***nell
MOSFET, N, TO-3P; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:44A; Resistance, Rds On:0.14ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination Type:Through Hole; N-channel Gate Charge:98nC; No. of Pins:3; Power, Pd:650W; Thermal Resistance, Junction to Case A:0.19°C/W; Typ Capacitance Ciss:5440pF; Voltage, Vds Max:500V; Time, trr Max:400ns
***emi
N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P
*** Source Electronics
Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P
***nell
MOSFET, N-CH, 500V, 48A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ure Electronics
Single N-Channel 500 V 0.105 Ohm 137 nC 625 W Flange Mount Mosfet - TO-247-3
***emi
N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247
***el Electronic
N-Channel UniFETTM FRFET® MOSFET 500V, 45A, 120mΩ, TO-247 3L, 3600-RAIL
*** Stop Electro
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package
***eco
Transistor MOSFET N-Channel 500 Volt 45A 3-Pin(3+Tab) TO-247
***ure Electronics
N-Channel 500 V 0.1 O 87 nC Flange Mount MDmesh Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 550V, 45A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***p One Stop
Trans MOSFET N-CH 560V 32A 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:560V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:284W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:32A; Current Id Max:32A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:284W; Power Dissipation Pd:284W; Power Dissipation Ptot Max:284W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds:560V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***p One Stop Global
Trans MOSFET N-CH 600V 46A 3-Pin(3+Tab) TO-247 Tube
***el Electronic
IC SUPERVISOR 2 CHANNEL SOT23-5
***S
French Electronic Distributor since 1988
Parte # Mfg. Descrizione Azione Prezzo
IXTQ44N50P
DISTI # IXTQ44N50P-ND
IXYS CorporationMOSFET N-CH 500V 44A TO-3P
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$7.8700
IXTQ44N50P
DISTI # 747-IXTQ44N50P
IXYS CorporationMOSFET 44 Amps 500V 0.14 Ohm Rds
RoHS: Compliant
35
  • 1:$10.0300
  • 10:$9.0300
  • 25:$7.5100
  • 50:$6.9800
  • 100:$6.8200
  • 250:$6.2300
  • 500:$5.6800
  • 1000:$5.4200
Immagine Parte # Descrizione
IXTQ44N50P

Mfr.#: IXTQ44N50P

OMO.#: OMO-IXTQ44N50P

MOSFET 44 Amps 500V 0.14 Ohm Rds
IXTQ480P2

Mfr.#: IXTQ480P2

OMO.#: OMO-IXTQ480P2

MOSFET PolarP2 Power MOSFET
IXTQ450P2

Mfr.#: IXTQ450P2

OMO.#: OMO-IXTQ450P2

MOSFET PolarP2 Power MOSFET
IXTQ48N20T

Mfr.#: IXTQ48N20T

OMO.#: OMO-IXTQ48N20T

MOSFET 48 Amps 200V 50 Rds
IXTQ44P15T

Mfr.#: IXTQ44P15T

OMO.#: OMO-IXTQ44P15T

MOSFET -44 Amps -150V 0.065 Rds
IXTQ450P2-ND

Mfr.#: IXTQ450P2-ND

OMO.#: OMO-IXTQ450P2-ND-1190

Nuovo e originale
IXTQ40N50Q

Mfr.#: IXTQ40N50Q

OMO.#: OMO-IXTQ40N50Q-IXYS-CORPORATION

MOSFET N-CH 500V 40A TO-3P
IXTQ44N50P

Mfr.#: IXTQ44N50P

OMO.#: OMO-IXTQ44N50P-IXYS-CORPORATION

Darlington Transistors MOSFET 44 Amps 500V 0.14 Ohm Rds
IXTQ480P2

Mfr.#: IXTQ480P2

OMO.#: OMO-IXTQ480P2-IXYS-CORPORATION

Darlington Transistors MOSFET PolarP2 Power MOSFET
IXTQ470P2

Mfr.#: IXTQ470P2

OMO.#: OMO-IXTQ470P2-IXYS-CORPORATION

IGBT Transistors MOSFET PolarP2 Power MOSFET
Disponibilità
Azione:
35
Su ordine:
2018
Inserisci la quantità:
Il prezzo attuale di IXTQ44N50P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
10,03 USD
10,03 USD
10
9,03 USD
90,30 USD
25
7,51 USD
187,75 USD
50
6,98 USD
349,00 USD
100
6,82 USD
682,00 USD
250
6,23 USD
1 557,50 USD
500
5,68 USD
2 840,00 USD
1000
5,42 USD
5 420,00 USD
2500
4,64 USD
11 600,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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