GS81302T11E-450M

GS81302T11E-450M
Mfr. #:
GS81302T11E-450M
Produttore:
GSI Technology
Descrizione:
SRAM 1.8 or 1.5V 16M x 9 144M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS81302T11E-450M Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS81302T11E-450M maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
Dimensione della memoria:
144 Mbit
Organizzazione:
16 M x 9
Frequenza massima di clock:
450 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
1.9 V
Tensione di alimentazione - Min:
1.7 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 125 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
DDR-II
Serie:
GS81302T11E
Tipo:
SigmaDDR-II+
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
10
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SigmaDDR-II+
Tags
GS81302T11E-45, GS81302T11E-4, GS81302T11E, GS81302T11, GS81302T1, GS81302T, GS81302, GS8130, GS813, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync 1.8V 144M-Bit 16M x 9-Bit 165-Pin BGA
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
Immagine Parte # Descrizione
GS81302T07GE-400

Mfr.#: GS81302T07GE-400

OMO.#: OMO-GS81302T07GE-400

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302TT37GE-350I

Mfr.#: GS81302TT37GE-350I

OMO.#: OMO-GS81302TT37GE-350I

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302T36E-375I

Mfr.#: GS81302T36E-375I

OMO.#: OMO-GS81302T36E-375I

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302T10GE-300I

Mfr.#: GS81302T10GE-300I

OMO.#: OMO-GS81302T10GE-300I

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T08E-333I

Mfr.#: GS81302T08E-333I

OMO.#: OMO-GS81302T08E-333I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T07GE-450

Mfr.#: GS81302T07GE-450

OMO.#: OMO-GS81302T07GE-450

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T07E-450I

Mfr.#: GS81302T07E-450I

OMO.#: OMO-GS81302T07E-450I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T08E-300

Mfr.#: GS81302T08E-300

OMO.#: OMO-GS81302T08E-300

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T06E-350

Mfr.#: GS81302T06E-350

OMO.#: OMO-GS81302T06E-350

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302TT10E-450

Mfr.#: GS81302TT10E-450

OMO.#: OMO-GS81302TT10E-450

SRAM 1.8 or 1.5V 16M x 9 144M
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di GS81302T11E-450M è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
10
469,38 USD
4 693,80 USD
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