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VBH40-05B

VBH40-05B
Mfr. #:
VBH40-05B
Produttore:
IXYS
Descrizione:
Discrete Semiconductor Modules 40 Amps 500V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
VBH40-05B Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
VBH40-05B Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Modulo
Serie
HiPerFET
Prodotto
Moduli a semiconduttore di potenza
Tipo
Moduli MOSFET H-Bridge
Confezione
Massa
Stile di montaggio
Vite
Pacchetto-Custodia
V2-PAK
Temperatura di esercizio
-40°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio su telaio
Pacchetto-dispositivo-fornitore
V2-PAK
Tipo FET
4 N-Channel (H-Bridge)
Potenza-Max
-
Drain-to-Source-Voltage-Vdss
500V
Ingresso-Capacità-Ciss-Vds
-
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
40A
Rds-On-Max-Id-Vgs
116 mOhm @ 30A, 10V
Vgs-th-Max-Id
4V @ 8mA
Gate-Carica-Qg-Vgs
270nC @ 10V
Tags
VBH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ukat
N-Ch-H-Bridge+Rectif. 500V 40A V2-Pack
***i-Key
MOSFET 4N-CH 500V 40A V2
***el Nordic
Contact for details
***icroelectronics
N-Channel 500V - 0.08 Ohm - 48A - ISOTOP MDmesh MOSFET
***ser
Power MOSFET Transistors N-Ch 500 Volt 48 Amp
***ical
Trans MOSFET N-CH 500V 48A 4-Pin ISOTOP Tube
***ure Electronics
N-Channel 550 V 0.1 O MDmesh™ Power Mosfet - ISOTOP
***(Formerly Allied Electronics)
MOSFET N-Channel 500V 48A ISOTOP4
***r Electronics
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***et
STMICROELECTRONICS STE48NM50 MOSFETS
***ment14 APAC
MOSFET, N CH, 550V, 48A, ISOTOP; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:550V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:450W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:48A; Package / Case:ISOTOP; Power Dissipation Pd:450W; Termination Type:Screw; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II MOSFET
***ser
Power MOSFET Transistors N-Ch 600 Volt 40 Amp
***ical
Trans MOSFET N-CH 600V 40A 4-Pin ISOTOP Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 600V 40A ISOTOP4
***ukat
N-Ch 600V 40A 460W 0,13R SOT227B
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 40A, ISOTOP, Tube
***et
STMICROELECTRONICS STE40NC60 MOSFETS
***nell
MOSFET, N SOT-227; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P
***icroelectronics
N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET
***ark
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:460W; RoHS Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 53 / Drain-Source Voltage (Vds) V = 500 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 30 / Fall Time ns = 38 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 46 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = ISOTOP / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Power Dissipation (Pd) W = 460
***icroelectronics
N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET
***ser
Power MOSFET Transistors N-Ch 500 Volt 70 Amp
***ical
Trans MOSFET N-CH 500V 70A 4-Pin ISOTOP Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 500V 70A MDMESH ISOTOP4
***ponent Stockers USA
70 A 500 V 0.05 ohm N-CHANNEL Si POWER MOSFET
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***et
STMICROELECTRONICS STE70NM50 MOSFETS
***nell
MOSFET, N CH, 500V, 70A, ISOTOP; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 600W; Transistor Case Style: ISOTOP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Screw; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
STGE200NB60S Series N-Channel 600 V 200 A Low Drop PowerMESH IGBT - ISOTOP
***ical
Trans IGBT Module N-CH 600V 200A 600000mW 4-Pin ISOTOP Tube
***el Electronic
STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 150Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 200A ISOTOP4
***ronik
IGBT 600V 200A 1.6V ISOTOP RoHSconf
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
***icroelectronics SCT
Short-circuit rugged IGBT, ISOTOP, Tube
***trelec
N-Channel IGBT, 600V, 200A, ISOTOP
***nell
IGBT MODULE, 600V, 200A, 600W; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 1.2V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: ISOTOP; No. of Pins: 4
***i-Key
IGBT MOD 600V 200A 600W ISOTOP
***icroelectronics
N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP package
***ure Electronics
N-Channel 650 V 15 mO 414 nC Chassis Mount Power Mosfet - ISOTOP
***ark
MOSFET, N-CH, 650V, 143A, ISOTOP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:143A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:4Pins RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
VBH40-05B
DISTI # VBH40-05B-ND		IXYS CorporationMOSFET 4N-CH 500V 40A V2
RoHS: Compliant
Min Qty: 6
Container: Box		Temporarily Out of Stock
  • 6:$82.2033
VBH40-05B
DISTI # 747-VBH40-05B		IXYS CorporationDiscrete Semiconductor Modules 40 Amps 500V
RoHS: Compliant		0
    Immagine Parte # Descrizione
    VBH40-05B

    Mfr.#: VBH40-05B

    OMO.#: OMO-VBH40-05B-IXYS-CORPORATION

    		 Discrete Semiconductor Modules 40 Amps 500V
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di VBH40-05B è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    123,30 USD
    123,30 USD
    10
    117,14 USD
    1 171,40 USD
    100
    110,97 USD
    11 097,45 USD
    500
    104,81 USD
    52 404,60 USD
    1000
    98,64 USD
    98 644,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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