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IKA08N65H5XKSA1

IKA08N65H5XKSA1
Mfr. #:
IKA08N65H5XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors IGBT PRODUCTS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKA08N65H5XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IKA08N65H5XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220FP-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.65 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
10.8 A
Pd - Dissipazione di potenza:
31.2 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Confezione:
Tubo
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
500
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IKA08N65H5 SP001001722
Unità di peso:
0.211644 oz
Tags
IKA08, IKA0, IKA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 500, Infineon IKA08N65H5XKSA1 IGBT, 10.8 A 650 V, 3-Pin TO-220FP
***ure Electronics
IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3
***ical
Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube
***p One Stop Japan
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***et Europe
Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube
***i-Key
IGBT 650V 10.8A 31.2W PG-TO220-3
***ronik
IGBT 650V 8A 1,65V TO220FP-3
***ark
IGBT, 650V, 8A, TO220-3
***ukat
650V 10,8A 31,2W TO220-Fullpak
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descrizione Azione Prezzo
IKA08N65H5XKSA1
DISTI # IKA08N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V 10.8A 31.2W PG-TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		400In Stock
  • 1000:$1.0781
  • 500:$1.3011
  • 100:$1.5837
  • 10:$1.9700
  • 1:$2.1900
IKA08N65H5XKSA1
DISTI # IKA08N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKA08N65H5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.0199
  • 1000:$0.9829
  • 2000:$0.9469
  • 3000:$0.9159
  • 5000:$0.8989
IKA08N65H5XKSA1
DISTI # SP001001722		Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube (Alt: SP001001722)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.1109
  • 10:€1.0099
  • 25:€0.9259
  • 50:€0.8879
  • 100:€0.8539
  • 500:€0.8229
  • 1000:€0.7929
IKA08N65H5
DISTI # 726-IKA08N65H5		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		423
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
  • 2500:$0.9560
  • 5000:$0.9210
IKA08N65H5XKSA1
DISTI # 726-IKA08N65H5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		386
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
  • 2500:$0.9560
  • 5000:$0.9210
IKA08N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		3990
  • 1000:$0.9400
  • 500:$0.9900
  • 100:$1.0300
  • 25:$1.0800
  • 1:$1.1600
IKA08N65H5XKSA1
DISTI # IKA08N65H5		Infineon Technologies AG650V 10,8A 31,2W TO220-Fullpak
RoHS: Compliant		455
  • 1:€4.9400
  • 10:€1.9400
  • 50:€0.9400
  • 100:€0.8600
Immagine Parte # Descrizione
1ED020I12-F2

Mfr.#: 1ED020I12-F2

OMO.#: OMO-1ED020I12-F2

 Gate Drivers DRIVER IC
1ED020I12-F2

Mfr.#: 1ED020I12-F2

OMO.#: OMO-1ED020I12-F2-91

 Gate Drivers DRIVER IC
Disponibilità
Azione:
386
Su ordine:
2369
Inserisci la quantità:
Il prezzo attuale di IKA08N65H5XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,08 USD
2,08 USD
10
1,77 USD
17,70 USD
100
1,41 USD
141,00 USD
500
1,24 USD
620,00 USD
1000
1,02 USD
1 020,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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