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IFS200V12PT4

IFS200V12PT4
Mfr. #:
IFS200V12PT4
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules MIPAQ SERVE 1200V 200A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IFS200V12PT4 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IFS200V12PT4 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Prodotto:
Moduli di silicio IGBT
Configurazione:
IGBT-Inverter
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.1 V
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 65 C
Confezione:
Vassoio
Marca:
Tecnologie Infineon
Stile di montaggio:
SMD/SMT
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
6
sottocategoria:
IGBT
Parte # Alias:
IFS200V12PT4BOSA1 SP000525356
Unità di peso:
1 lb
Tags
IFS200, IFS2, IFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 6.0pF 25volts C0G +/-0.5pF
***ineon SCT
The 1200V MIPAQ™ serve using IGBT4 technology in sixpack configuration plus a full set of drivers and temperature measurement on top of the IGBT module, AG-MIPAQ-3, RoHS
***ineon
The 1200V MIPAQ serve using IGBT4 technology in sixpack configuration plus a full set of drivers and temperature measurement on top of the IGBT module. Inside the module, there is a galvanically isolated driver based on Infineons Coreless Transformer Technology. | Summary of Features: Up to 200 A nominal current; Designed for robustness: Ultrasonic welding technology, Injection molded DC-bus-bar, control pins and power terminals; Highly sophisticated CLT leads to improved system reliability due to elimination of optoelectronics; Increasing both output power and efficiency due to optimized dead time; Industrial standard connectors; Plug & play solution for high current drives; 150 C operation junction temperature; RoHS compliant | Benefits: EconoPACK 4 package plus driver on top saves board space in the application; True baseplate temperature measurement providing digital information to the user galvanically separated | Target Applications: drives; wind; solar; ups
MIPAQ™ Intelligent Power Modules
Infineon MIPAQ™ Intelligent Power Modules integrate electronics into power modules and is a functional product category within the Insulated Gate Bipolar Transistor (IGBT) modules portfolio. These power modules combine IGBT modules, integrated sensing and driving electronics. The MIPAQ™ power modules offer powerful and compact inverters for low and medium power. The power modules are cost-effective and contribute to energy saving.
Parte # Mfg. Descrizione Azione Prezzo
IFS200V12PT4BOSA1
DISTI # IFS200V12PT4BOSA1-ND		Infineon Technologies AGMODULE IPM MIPAQ-3
RoHS: Compliant
Min Qty: 6
Container: Tray		Limited Supply - Call
  • 6:$507.6117
IFS200V12PT4BOSA1
DISTI # IFS200V12PT4BOSA1		Infineon Technologies AGIPM - Trays (Alt: IFS200V12PT4BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray		Americas - 0
  • 6:$522.3900
  • 12:$503.4900
  • 24:$485.2900
  • 36:$468.9900
  • 60:$460.6900
IFS200V12PT4
DISTI # 641-IFS200V12PT4		Infineon Technologies AGIGBT Modules MIPAQ SERVE 1200V 200A
RoHS: Compliant		4
  • 1:$489.5100
  • 5:$460.0100
Immagine Parte # Descrizione
MJD44H11G

Mfr.#: MJD44H11G

OMO.#: OMO-MJD44H11G

 Bipolar Transistors - BJT 8A 80V 20W NPN
MJD45H11G

Mfr.#: MJD45H11G

OMO.#: OMO-MJD45H11G

 Bipolar Transistors - BJT 8A 80V 20W PNP
ES1D

Mfr.#: ES1D

OMO.#: OMO-ES1D

 Rectifiers 1.0a Rectifier UF Recovery
79109-1010

Mfr.#: 79109-1010

OMO.#: OMO-79109-1010

 Headers & Wire Housings 2MM RECEPT. 22 CKT Vert. Selective Gold
87832-2220

Mfr.#: 87832-2220

OMO.#: OMO-87832-2220

 Headers & Wire Housings 2MM HDR. 22 CKT. Vert. SMT
43025-2200

Mfr.#: 43025-2200

OMO.#: OMO-43025-2200-410

 Headers & Wire Housings 22 CKT RECEPTACLE
87832-2220

Mfr.#: 87832-2220

OMO.#: OMO-87832-2220-MOLEX

 Headers & Wire Housings 2MM HDR. 22 CKT. Vert. SMT
79109-1010

Mfr.#: 79109-1010

OMO.#: OMO-79109-1010-MOLEX

 Headers & Wire Housings 2MM RECEPT. 22 CKT Vert. Selective Gold
ES1D

Mfr.#: ES1D

OMO.#: OMO-ES1D-ON-SEMICONDUCTOR

 DIODE GEN PURP 200V 1A SMA
MJD45H11G

Mfr.#: MJD45H11G

OMO.#: OMO-MJD45H11G-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT 8A 80V 20W PNP
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di IFS200V12PT4 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
6
460,01 USD
2 760,06 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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