RJH65D27BDPQ-A0#T2

RJH65D27BDPQ-A0#T2
Mfr. #:
RJH65D27BDPQ-A0#T2
Produttore:
Renesas Electronics
Descrizione:
IGBT Transistors IGBT - 650V/50A/TO-247A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RJH65D27BDPQ-A0#T2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
RJH65D27BDPQ-A0#T2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Renesas Elettronica
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247A-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.3 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
100 A
Pd - Dissipazione di potenza:
375 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
RJH65D27BDPQ
Confezione:
Tubo
Corrente continua del collettore Ic Max:
100 A
Marca:
Renesas Elettronica
Corrente di dispersione gate-emettitore:
+/- 1 uA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Unità di peso:
0.211644 oz
Tags
RJH65, RJH6, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
IGBT For Inverter 650V 50A ±30 Gate to Emitter Voltage 375W 3-Pin TO-247A Tube
***ical
Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247A Tube
*** Electronic Components
IGBT Transistors IGBT - 650V/50A/TO-247A
***egrated Device Technology
IGBT for Inverter Applications
IGBT Transistors
Renesas IGBT Transistors incorporate Trench gate, thin wafer technology, and feature built-in fast recovery diode in one package. These transistors include single configuration and incorporate through hole mounting style. The IGBT transistor's collector to emitter voltage ranges from 600V to 650V. Typical applications include current resonance circuit, inverters, induction heating, microwave oven, and power factor correction circuit.Learn More
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Headers & Wire Housings TERMINAL 20-24 BULK
Disponibilità
Azione:
Available
Su ordine:
5000
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