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IPS135N03L G

IPS135N03L G
Mfr. #:
IPS135N03L G
Produttore:
infineon
Descrizione:
IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPS135N03L G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
infineon
categoria di prodotto
FET - Single
Serie
OptiMOS 3
Confezione
Tubo
Alias ​​parziali
IPS135N03LGAKMA1 SP000788220
Unità di peso
0.139332 oz
Stile di montaggio
Foro passante
Nome depositato
OptiMOS
Pacchetto-Custodia
IPAK-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
31 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
2 ns
Ora di alzarsi
3 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
30 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
13.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
12 ns
Tempo di ritardo all'accensione tipico
3 ns
Modalità canale
Aumento
Tags
IPS135N03LG, IPS135, IPS13, IPS1, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251
***ponent Stockers USA
30 A 30 V 0.0135 ohm N-CHANNEL Si POWER MOSFET TO-251
***nell
MOSFET, N CH, 30A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 31W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
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Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 21.4ns
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MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
***emi
Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
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Trans MOSFET N-CH 30V 8.5A 3-Pin(3+Tab) IPAK Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
***emi
Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 25V 32A 3-Pin(3+Tab) IPAK Rail - Rail/Tube
***ser
MOSFETs- Power and Small Signal 25V 62A N-Channel
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:62A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:58W ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
IPS135N03LGAKMA1
DISTI # IPS135N03LGAKMA1-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO251-3
RoHS: Compliant
Min Qty: 1500
Container: Tube		Limited Supply - Call
    IPS135N03L G
    DISTI # 726-IPS135N03LG    		Infineon Technologies AGMOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
    RoHS: Compliant    		0
      IPS135N03LGInfineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
      RoHS: Compliant      		2861
      • 1000:$0.1800
      • 100:$0.1900
      • 500:$0.1900
      • 25:$0.2000
      • 1:$0.2200
      Immagine Parte # Descrizione
      IPS135N03L

      Mfr.#: IPS135N03L

      OMO.#: OMO-IPS135N03L-1190

      		 Nuovo e originale
      IPS135N03LG

      Mfr.#: IPS135N03LG

      OMO.#: OMO-IPS135N03LG-1190

      		 Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
      IPS135N03LGAKMA1

      Mfr.#: IPS135N03LGAKMA1

      OMO.#: OMO-IPS135N03LGAKMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 30A TO251-3
      IPS135N03L G

      Mfr.#: IPS135N03L G

      OMO.#: OMO-IPS135N03L-G-126

      		 IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
      Disponibilità
      Azione:
      Available
      Su ordine:
      2000
      Inserisci la quantità:
      Il prezzo attuale di IPS135N03L G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,23 USD
      0,23 USD
      10
      0,22 USD
      2,16 USD
      100
      0,21 USD
      20,51 USD
      500
      0,19 USD
      96,85 USD
      1000
      0,18 USD
      182,30 USD
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