IDH02G120C5XKSA1

IDH02G120C5XKSA1
Mfr. #:
IDH02G120C5XKSA1
Produttore:
Infineon Technologies
Descrizione:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IDH02G120C5XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IDH02G120C5XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-2
Se - Corrente diretta:
2 A
Vrrm - Tensione inversa ripetitiva:
1.2 kV
Vf - Tensione diretta:
1.4 V
Ifsm - Corrente diretta in avanti:
37 A
Configurazione:
Separare
Tecnologia:
SiC
Ir - Corrente inversa:
1.2 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Marca:
Tecnologie Infineon
Pd - Dissipazione di potenza:
75 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
500
sottocategoria:
Diodi e raddrizzatori
Nome depositato:
CoolSiC
Vr - Tensione inversa:
1.2 kV
Parte # Alias:
IDH02G120C5 SP001079720
Unità di peso:
0.211644 oz
Tags
IDH02G, IDH02, IDH0, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC
***ineon SCT
1200 V Silicion Carbide Schottky diode in TO-220 real2pin package, PG-TO220-2, RoHS
***ow.cn
Rectifier Diode Schottky 1.2KV 11.8A 2-Pin(2+Tab) TO-220 Tube
***ure Electronics
IDH02G120C5 Series 1200 V 2 A 5th Generation ThinQ!™ SiC Schottky Diode-TO-220-2
***nell
SILICON CARBIDE SCHOTTKY DIODE, 1.2KV; Product Range: -; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 1.2kV; Continuous Forward Current If: 11.8A; Total Capacitive Charge Qc: 14nC; Diode Case Style: TO-220
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descrizione Azione Prezzo
IDH02G120C5XKSA1
DISTI # V99:2348_09156845
Infineon Technologies AGDiode Schottky 1.2KV 11.8A 2-Pin(2+Tab) TO-220 Tube
RoHS: Compliant
604
  • 5000:$1.4230
  • 2500:$1.4729
  • 1000:$1.5350
  • 500:$1.7210
  • 250:$1.9040
  • 100:$2.0050
  • 10:$2.2759
  • 1:$2.6160
IDH02G120C5XKSA1
DISTI # IDH02G120C5XKSA1-ND
Infineon Technologies AGDIODE SCHOTTKY 1200V 2A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1000:$1.6704
  • 500:$1.9806
  • 100:$2.3266
  • 50:$2.6846
  • 1:$3.1600
IDH02G120C5XKSA1
DISTI # 29444380
Infineon Technologies AGDiode Schottky 1.2KV 11.8A 2-Pin(2+Tab) TO-220 Tube
RoHS: Compliant
604
  • 500:$1.7660
  • 100:$2.0360
  • 10:$2.2890
  • 5:$2.6070
IDH02G120C5XKSA1
DISTI # IDH02G120C5XKSA1
Infineon Technologies AGDiode Schottky Diode 1200V 11.8A 2-Pin TO-220 Tube - Rail/Tube (Alt: IDH02G120C5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.5900
  • 1000:$1.4900
  • 2000:$1.4900
  • 3000:$1.3900
  • 5000:$1.3900
IDH02G120C5XKSA1
DISTI # 84Y5907
Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:11.8A,Total Capacitive Charge Qc:14nC,Diode Case Style:TO-220,No. of , RoHS Compliant: Yes336
  • 1:$3.0100
  • 10:$2.5600
  • 25:$2.4500
  • 50:$2.3300
  • 100:$2.2200
  • 250:$2.1100
  • 500:$1.8900
IDH02G120C5XKSA1
DISTI # 726-IDH02G120C5XKSA1
Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant
803
  • 1:$3.0100
  • 10:$2.5600
  • 100:$2.2200
  • 250:$2.1100
  • 500:$1.8900
  • 1000:$1.6000
  • 2500:$1.5200
  • 5000:$1.4600
IDH02G120C5XKSA1
DISTI # 1338550
Infineon Technologies AGSIC SCHOTTKY DIODE 1200V 2A TO-220-2, TU408
  • 500:£1.4690
  • 1500:£1.3650
IDH02G120C5XKSA1
DISTI # 2564810
Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV
RoHS: Compliant
354
  • 1:£2.3200
  • 10:£1.9700
  • 100:£1.7100
  • 250:£1.6300
  • 500:£1.4600
IDH02G120C5XKSA1
DISTI # C1S322000579147
Infineon Technologies AGRectifier Diodes
RoHS: Compliant
604
  • 500:$1.7660
  • 100:$2.0360
  • 10:$2.2890
  • 1:$2.6070
IDH02G120C5XKSA1
DISTI # 2564810
Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV
RoHS: Compliant
336
  • 1:$3.5100
  • 10:$3.2800
  • 100:$2.9000
  • 500:$2.7400
  • 1000:$2.6000
Immagine Parte # Descrizione
TSB572IDT

Mfr.#: TSB572IDT

OMO.#: OMO-TSB572IDT

Operational Amplifiers - Op Amps CONDITIONING & INTERFACES
VS-HFA08TB120-M3

Mfr.#: VS-HFA08TB120-M3

OMO.#: OMO-VS-HFA08TB120-M3

Rectifiers 1200V 8A TO-220 HexFred
FFSP05120A

Mfr.#: FFSP05120A

OMO.#: OMO-FFSP05120A

Schottky Diodes & Rectifiers 1200V SiC SBD 5A
C4D02120A

Mfr.#: C4D02120A

OMO.#: OMO-C4D02120A

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A
3296X-1-501RLF

Mfr.#: 3296X-1-501RLF

OMO.#: OMO-3296X-1-501RLF

Trimmer Resistors - Through Hole 1/2W 500ohm 10% Square Trimpot
LMR33630BRNXT

Mfr.#: LMR33630BRNXT

OMO.#: OMO-LMR33630BRNXT

Switching Voltage Regulators SIMPLE SWITCHER- 3.8V to 36V, 3A Synchronous Buck Converter With Ultra-Low EMI 12-VQFN-HR -40 to 125
TSB572IDT

Mfr.#: TSB572IDT

OMO.#: OMO-TSB572IDT-STMICROELECTRONICS

LOW-POWER 2.5 MHZ RR IO 36 V BIC
VS-HFA08TB120-M3

Mfr.#: VS-HFA08TB120-M3

OMO.#: OMO-VS-HFA08TB120-M3-VISHAY

DIODE FRED 1.2KV 8A TO220AC
LMR33630BRNXT

Mfr.#: LMR33630BRNXT

OMO.#: OMO-LMR33630BRNXT-TEXAS-INSTRUMENTS

SIMPLE SWITCHER 3.8V to 36V, 3A Synchronous Buck Converter With Ultra-Low EMI
CGD15SG00D2

Mfr.#: CGD15SG00D2

OMO.#: OMO-CGD15SG00D2-WOLFSPEED

SIC MOSFET ISOLATED GATE DRIVER
Disponibilità
Azione:
574
Su ordine:
2557
Inserisci la quantità:
Il prezzo attuale di IDH02G120C5XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,77 USD
2,77 USD
10
2,35 USD
23,50 USD
100
2,04 USD
204,00 USD
250
1,93 USD
482,50 USD
500
1,73 USD
865,00 USD
1000
1,46 USD
1 460,00 USD
2500
1,39 USD
3 475,00 USD
5000
1,33 USD
6 650,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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