IPB100N08S2-07

IPB100N08S2-07
Mfr. #:
IPB100N08S2-07
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB100N08S2-07 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPB100N08S2-07 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
OptiMOS
Confezione
Bobina
Alias ​​parziali
IPB100N08S207ATMA1 IPB100N08S207XT SP000219044
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
300 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
30 ns
Ora di alzarsi
51 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
100 A
Vds-Drain-Source-Breakdown-Voltage
75 V
Rds-On-Drain-Source-Resistenza
7.1 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
61 ns
Tempo di ritardo all'accensione tipico
26 ns
Modalità canale
Aumento
Tags
IPB100N08, IPB100N0, IPB100N, IPB100, IPB10, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPB100N08S207ATMA1
DISTI # V72:2272_06383028
Infineon Technologies AGTrans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$1.3653
  • 500:$1.4990
  • 250:$1.6386
  • 100:$1.7308
  • 25:$1.9702
  • 10:$2.0336
  • 1:$2.2361
IPB100N08S207ATMA1
DISTI # IPB100N08S207ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 75V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.4977
IPB100N08S207ATMA1
DISTI # 26998552
Infineon Technologies AGTrans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$1.3653
  • 500:$1.4990
  • 250:$1.6386
  • 100:$1.7308
  • 25:$1.9702
  • 10:$2.0336
  • 6:$2.2361
IPB100N08S207ATMA1
DISTI # IPB100N08S207ATMA1
Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N08S207ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.2900
  • 2000:$1.2900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.0900
IPB100N08S207ATMA1
DISTI # SP000219044
Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 (Alt: SP000219044)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€1.6900
  • 2000:€1.2900
  • 4000:€1.1900
  • 6000:€1.1900
  • 10000:€1.0900
IPB100N08S2-07
DISTI # 726-IPB100N08S207
Infineon Technologies AGMOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
RoHS: Compliant
619
  • 1:$2.7700
  • 10:$2.3500
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3700
  • 2000:$1.2700
  • 5000:$1.2300
IPB100N08S207ATMA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 75V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
13677
  • 1000:$1.3100
  • 500:$1.3800
  • 100:$1.4300
  • 25:$1.5000
  • 1:$1.6100
IPB100N08S207ATMA1
DISTI # C1S322000694686
Infineon Technologies AGMOSFETs
RoHS: Compliant
1000
  • 250:$1.6508
  • 100:$1.7481
  • 25:$1.9797
  • 10:$2.0392
  • 1:$2.2411
Immagine Parte # Descrizione
IPB100N04S204ATMA4

Mfr.#: IPB100N04S204ATMA4

OMO.#: OMO-IPB100N04S204ATMA4

MOSFET N-CHANNEL_30/40V
IPB100N08S207ATMA1

Mfr.#: IPB100N08S207ATMA1

OMO.#: OMO-IPB100N08S207ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 75V 100A TO263-3
IPB100N04S4-02D

Mfr.#: IPB100N04S4-02D

OMO.#: OMO-IPB100N04S4-02D-1190

MOSFET N-Ch 40V 100A D2PAK-2
IPB100N04S4-H2 4N04H2

Mfr.#: IPB100N04S4-H2 4N04H2

OMO.#: OMO-IPB100N04S4-H2-4N04H2-1190

Nuovo e originale
IPB100N06S2L-05  PN06L05

Mfr.#: IPB100N06S2L-05 PN06L05

OMO.#: OMO-IPB100N06S2L-05-PN06L05-1190

Nuovo e originale
IPB100N06S3

Mfr.#: IPB100N06S3

OMO.#: OMO-IPB100N06S3-1190

Nuovo e originale
IPB100N06S3-03 GRN

Mfr.#: IPB100N06S3-03 GRN

OMO.#: OMO-IPB100N06S3-03-GRN-1190

Nuovo e originale
IPB100N12S3-05

Mfr.#: IPB100N12S3-05

OMO.#: OMO-IPB100N12S3-05-1190

Nuovo e originale
IPB100N04S2-04

Mfr.#: IPB100N04S2-04

OMO.#: OMO-IPB100N04S2-04-317

RF Bipolar Transistors MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS
IPB100N04S402DXTMA1

Mfr.#: IPB100N04S402DXTMA1

OMO.#: OMO-IPB100N04S402DXTMA1-317

RF Bipolar Transistors MOSFET N-Ch 40V 100A D2PAK-2
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di IPB100N08S2-07 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,84 USD
1,84 USD
10
1,75 USD
17,53 USD
100
1,66 USD
166,05 USD
500
1,57 USD
784,15 USD
1000
1,48 USD
1 476,00 USD
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