FGA15N120ANTDTU_F109

Mfr. #:: FGA15N120ANTDTU_F109
Produttore:: Fairchild Semiconductor
Descrizione:: IGBT Transistors 1200V NPT Trench
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FGA15N120ANTDTU_F109 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Fairchild Semiconductor

categoria di prodotto: IGBT - Singolo

Serie: -

Confezione: Tubo

Unità di peso: 0.225789 oz

Stile di montaggio: Foro passante

Pacchetto-Custodia: TO-3P-3, SC-65-3

Tipo di ingresso: Standard

Tipo di montaggio: Foro passante

Pacchetto-dispositivo-fornitore: TO-3PN

Configurazione: Separare

Potenza-Max: 186W

Reverse-Tempo di ripristino-trr: 330ns

Corrente-Collettore-Ic-Max: 30A

Tensione-Collettore-Emettitore-Ripartizione-Max: 1200V

Tipo IGBT: NPT e Trincea

Corrente-Collettore-Impulsato-Icm: 45A

Vce-su-Max-Vge-Ic: 2.4V @ 15V, 15A

Energia di commutazione: 3mJ (on), 600μJ (off)

Gate-Charge: 120nC

Td-on-off-25°C: 15ns/160ns

Condizione di test: 600V, 15A, 10 Ohm, 15V

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Collettore-Emettitore-Tensione-VCEO-Max: 1200 V

Massima-tensione-gate-emettitore: +/- 20 V

Continuo-Collettore-Corrente-Ic-Max: 24 A

Tags: FGA15N120ANTDTU-F, FGA15N120ANTDT, FGA15N120ANT, FGA15N120AN, FGA15N120A, FGA15N120, FGA15N1, FGA15N, FGA15, FGA1, FGA

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA15N120ANTDTU_F109 Descrizione

***ark: IGBT Single Transistor, 30 A, 2.3 V, 186 W, 1.2 kV, TO-3P, 3

***ow.cn: Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Tube

***ment14 APAC: IGBT, SINGLE, 1.2KV, 30A, TO-3P-3

***th Star Micro: Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

***ical: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors 1200V UltraFast Discrete IGBT

***el Electronic: RF Connectors / Coaxial Connectors 250Vrms 0.07ohms 11GHZ

***or: INSULATED GATE BIPOLAR GATE TRAS

***ical: Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

***nell: IGBT, 1200V, 21A; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati

***rchild Semiconductor: HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

***ical: Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: HGTP5N120BND Series 1200 V 21 A Flange Mount N-Channel IGBT - TO-220AB

***r Electronics: Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

***ark: RAIL / 1200V,21A,NPT SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST

***rchild Semiconductor: HGTP5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and motor control.

***ical: Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube

***emi: IGBT, 1250V, 15A, Shorted-anode

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel

***ark: RAIL / 1250V 15A FS SA Trench IGBT

***rchild Semiconductor: Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.

***p One Stop Global: Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC

***el Electronic: Inductor RF Chip Thin Film 4.1nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R

***ineon SCT: 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ure Electronics: GenX3 XPT IGBT 900 V 8 A Through Hole High-Speed IGBT - TO-220-3

***i-Key: IGBT 900V 20A 125W TO220

***el Electronic: IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT

***trelec: IGBT, 900V, 20A, TO-220

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FGA15N120ANTDTU-F109 DISTI # 26733881	ON Semiconductor	1200V NPT TRENCH IGBT	3600	5400:$1.2829 3600:$1.3379 1800:$1.3978 450:$1.5608
FGA15N120ANTDTU-F109 DISTI # 33626149	ON Semiconductor	1200V NPT TRENCH IGBT	1737	9:$1.2370
FGA15N120ANTDTU-F109 DISTI # FGA15N120ANTDTU-F109-ND	ON Semiconductor	IGBT 1200V 30A 186W TO3P RoHS: Compliant Min Qty: 1 Container: Tube	508In Stock	2700:$1.4853 900:$1.7611 450:$1.9627 25:$2.3872 10:$2.5250 1:$2.8100
FGA15N120ANTDTU-F109 DISTI # V36:1790_06359116	ON Semiconductor	1200V NPT TRENCH IGBT	0
FGA15N120ANTDTU_F109 DISTI # FGA15N120ANTDTU-F109	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FGA15N120ANTDTU-F109) Min Qty: 214 Container: Bulk	Americas - 0	1070:$1.3900 2140:$1.3900 214:$1.4900 428:$1.4900 642:$1.4900
FGA15N120ANTDTU_F109 DISTI # FGA15N120ANTDTU-F109	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA15N120ANTDTU-F109) RoHS: Compliant Min Qty: 1	Europe - 0	500:€1.1900 1000:€1.1900 50:€1.2900 100:€1.2900 25:€1.3900 10:€1.6900 1:€1.9900
FGA15N120ANTDTU_F109 DISTI # FGA15N120ANTDTU-F109	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA15N120ANTDTU-F109) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.2900 900:$1.2900 1800:$1.2900 2700:$1.2900 4500:$1.2900
FGA15N120ANTDTU-F109 DISTI # 31Y1431	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:186W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	2283	500:$1.6300 250:$1.7400 100:$1.8600 50:$2.0100 25:$2.1700 10:$2.3200 1:$2.7400
FGA15N120ANTDTU-F109 DISTI # 512-FGA15N120ANTDTUF	ON Semiconductor	IGBT Transistors 1200V NPT Trench RoHS: Compliant	497	1:$2.7100 10:$2.3000 100:$1.8400 500:$1.6100 1000:$1.3300
FGA15N120ANTDTU-F109	Fairchild Semiconductor Corporation	RoHS: Not Compliant	73350	1000:$1.5400 500:$1.6200 100:$1.6900 25:$1.7600 1:$1.9000
FGA15N120ANTDTU_F109 DISTI # 6715398P	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 24A TO-3P(N), TU	17	500:£1.5600 250:£1.6800 100:£1.8000 25:£1.9600
FGA15N120ANTDTU-F109 DISTI # 2453877	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3 RoHS: Compliant	2283	1000:$2.0400 500:$2.4800 100:$2.8300 10:$3.5400 1:$4.1700
FGA15N120ANTDTU-F109 DISTI # 2453877	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3	2356	500:£1.2500 250:£1.4400 100:£1.4700 10:£1.8400 1:£2.4100

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: FGA15N120ANTDTU OMO.#: OMO-FGA15N120ANTDTU	IGBT Transistors 1200V NPT Trench IGBT
	Mfr.#: FGA15N120ANTDTU_F109 OMO.#: OMO-FGA15N120ANTDTU-F109-126	IGBT Transistors 1200V NPT Trench
	Mfr.#: FGA15N120A OMO.#: OMO-FGA15N120A-1190	Nuovo e originale
	Mfr.#: FGA15N120ADN OMO.#: OMO-FGA15N120ADN-1190	Nuovo e originale
	Mfr.#: FGA15N120AND(IGBT) OMO.#: OMO-FGA15N120AND-IGBT--1190	Nuovo e originale
	Mfr.#: FGA15N120ANDTU OMO.#: OMO-FGA15N120ANDTU-ON-SEMICONDUCTOR	IGBT 1200V 24A 200W TO3P
	Mfr.#: FGA15N120ANTD FGA25N120A OMO.#: OMO-FGA15N120ANTD-FGA25N120A-1190	Nuovo e originale
	Mfr.#: FGA15N120ANTD,FGA15N120A OMO.#: OMO-FGA15N120ANTD-FGA15N120A-1190	Nuovo e originale
	Mfr.#: FGA15N120ANTDTU OMO.#: OMO-FGA15N120ANTDTU-ON-SEMICONDUCTOR	IGBT 1200V 30A 186W TO3P
	Mfr.#: FGA15N120ANTDTU,FGA15N12 OMO.#: OMO-FGA15N120ANTDTU-FGA15N12-1190	Nuovo e originale

Disponibilità

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Su ordine:: 2000
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Il prezzo attuale di FGA15N120ANTDTU_F109 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,94 USD~~; ~~1,94 USD~~

10: ~~1,84 USD~~; ~~18,38 USD~~

100: ~~1,74 USD~~; ~~174,15 USD~~

500: ~~1,64 USD~~; ~~822,40 USD~~

1000: ~~1,55 USD~~; ~~1 548,00 USD~~

Iniziare con

FGA15N120ANTDTU_F109

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes