BSC12DN20NS3G

Mfr. #:: BSC12DN20NS3G
Produttore:: Infineon Technologies
Descrizione:: RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSC12DN20NS3G Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: OptiMOS 3

Confezione: Bobina

Alias parziali: BSC12DN20NS3GATMA1 SP000781774

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: TDSON-8

Tecnologia: si

Numero di canali: 1 Channel

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 50 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 11.3 A

Vds-Drain-Source-Breakdown-Voltage: 200 V

Rds-On-Drain-Source-Resistenza: 108 mOhms

Polarità del transistor: Canale N

Transconduttanza diretta-Min: 12 S 6 S

Tags: BSC12D, BSC12, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3988In Stock	1000:$0.6050 500:$0.7664 100:$0.9882 10:$1.2500 1:$1.4100
BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3988In Stock	1000:$0.6050 500:$0.7664 100:$0.9882 10:$1.2500 1:$1.4100
BSC12DN20NS3GATMA1 DISTI # BSC12DN20NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.5208
BSC12DN20NS3 G DISTI # SP000781774	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP (Alt: SP000781774) RoHS: Compliant Min Qty: 5000	Europe - 0	5000:€0.6449 10000:€0.5279 20000:€0.4839 30000:€0.4459 50000:€0.4149
BSC12DN20NS3GXT DISTI # BSC12DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.5119 10000:$0.4939 20000:$0.4759 30000:$0.4599 50000:$0.4519
BSC12DN20NS3GATMA1 DISTI # 50Y1813	Infineon Technologies AG	MOSFET Transistor, N Channel, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V RoHS Compliant: Yes	0	1000:$0.6530 500:$0.8270 250:$0.9140 100:$1.0000 50:$1.1000 25:$1.1900 10:$1.2800 1:$1.4400
BSC12DN20NS3GATMA1	Infineon Technologies AG	Single N-Channel 200 V 125 mOhm 6.5 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant	5000Reel	5000:$0.5100
BSC12DN20NS3 G DISTI # 726-BSC12DN20NS3GATM	Infineon Technologies AG	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant	3326	1:$1.1600 10:$0.9970 100:$0.7660 500:$0.6770 1000:$0.5340 5000:$0.4740 10000:$0.4560
BSC12DN20NS3G DISTI # 726-BSC12DN20NS3G	Infineon Technologies AG	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant	8945	1:$1.1600 10:$0.9970 100:$0.7660 500:$0.6770 1000:$0.5340 5000:$0.4740 10000:$0.4560
BSC12DN20NS3GATMA1 DISTI # 1702290	Infineon Technologies AG	MOSFET N-CH 200V 11A 125M OPTIMOS3 TDSON, RL	4960	10000:£0.4290 5000:£0.4580
BSC12DN20NS3GATMA1 DISTI # 2480747RL	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TDSON-8 RoHS: Compliant	0	1000:$0.8050 500:$1.0200 100:$1.1500 10:$1.5000 1:$1.7500
BSC12DN20NS3GATMA1 DISTI # 2480747	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TDSON-8 RoHS: Compliant	0	1000:$0.8050 500:$1.0200 100:$1.1500 10:$1.5000 1:$1.7500
BSC12DN20NS3GATMA1 DISTI # 2480747	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TDSON-8 RoHS: Compliant	485	500:£0.6050 250:£0.6530 100:£0.7000 25:£0.7760 5:£0.8510
BSC12DN20NS3GATMA1 DISTI # XSFP00000114613	Infineon Technologies AG	RoHS: Compliant	15000 in Stock0 on Order	15000:$0.6375 5000:$0.6800

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSC12DN20NS3 G OMO.#: OMO-BSC12DN20NS3-G	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
	Mfr.#: BSC12DN20NS3G OMO.#: OMO-BSC12DN20NS3G	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
	Mfr.#: BSC12DN20NS3 G OMO.#: OMO-BSC12DN20NS3-G-1190	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
	Mfr.#: BSC12DN20NS3GXT OMO.#: OMO-BSC12DN20NS3GXT-1190	Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1)
	Mfr.#: BSC12DN20NS3GATMA1 OMO.#: OMO-BSC12DN20NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 11.3A 8TDSON
	Mfr.#: BSC12DN20NS3G OMO.#: OMO-BSC12DN20NS3G-317	RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3

Disponibilità

Azione:: Available
Su ordine:: 4500
Inserisci la quantità:

Il prezzo attuale di BSC12DN20NS3G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,71 USD~~; ~~0,71 USD~~

10: ~~0,68 USD~~; ~~6,76 USD~~

100: ~~0,64 USD~~; ~~63,99 USD~~

500: ~~0,60 USD~~; ~~302,20 USD~~

1000: ~~0,57 USD~~; ~~568,80 USD~~

Iniziare con

BSC12D 4
BSC12 34
BSC1 141
BSC 999

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BSC12DN20NS3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes