IXFX180N07

IXFX180N07
Mfr. #:
IXFX180N07
Produttore:
IXYS
Descrizione:
MOSFET 70V 180A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFX180N07 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXFX180N07
Confezione
Tubo
Unità di peso
0.257500 oz
Stile di montaggio
Foro passante
Nome depositato
HyperFET
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
560 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
55 ns
Ora di alzarsi
90 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
180 A
Vds-Drain-Source-Breakdown-Voltage
70 V
Rds-On-Drain-Source-Resistenza
6 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
140 ns
Tempo di ritardo all'accensione tipico
65 ns
Transconduttanza diretta-Min
90 S
Modalità canale
Aumento
Tags
IXFX18, IXFX1, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 70V 180A PLUS247
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 209A;TO-247AC;PD 470W;-55de
***ure Electronics
Single N-Channel 75 V 4.5 mOhm 620 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***eco
IRFP2907PBF,MOSFET, 75V, 177A, 4.5 MOHM, 410 NC QG, TO-247AC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CH MOSFET, 75V, 209A, TO-247AC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:209A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:470W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Current Id Max:209A; Junction to Case Thermal Resistance A:0.45°C/W; Package / Case:TO-247AC; Power Dissipation Pd:470W; Power Dissipation Pd:330W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package
***ical
Trans MOSFET N-CH 75V 170A Automotive 3-Pin(3+Tab) TO-247AC Tube
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET,N CH,75V,170A,TO247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:310W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
IRFP4368PBF N-channel MOSFET Transistor, 350 A, 75 V, 3-Pin TO-247AC
***ure Electronics
Single N-Channel 75 V 1.85 mOhm 570 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***roFlash
Power Field-Effect Transistor, 195A I(D), 75V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, 75V 350A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:350A; Drain Source Voltage Vds:75V; On Resistance Rds(on):1.46mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:350A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:1280A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 60 V 0.009 Ohms Flange Mount Power Mosfet - TO-247
***nell
N CHANNEL MOSFET, 60V, 70A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs Typ: 4V
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***et
Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-247 Tube
***el Electronic
Unclassified Tape & Reel (TR) 0201 ±1% ±200ppm/℃
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 60 V 0.014 Ohms Flange Mount Power Mosfet - TO-247
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:70A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Drain Source On Resistance @ 10V:14mohm RoHS Compliant: Yes
***nell
MOSFET, N, 60V, 70A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:70A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:360A; Power Dissipation:230W; Power, Pd:230W; Resistance, Rds on @ Vgs = 10V:14ohm; Thermal Resistance, Junction to Case A:0.65°C/W; Voltage, Vds Max:60V
Parte # Mfg. Descrizione Azione Prezzo
IXFX180N07
DISTI # IXFX180N07-ND
IXYS CorporationMOSFET N-CH 70V 180A PLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$16.1173
IXFX180N07
DISTI # 747-IXFX180N07
IXYS CorporationMOSFET 70V 180A
RoHS: Compliant
0
    Immagine Parte # Descrizione
    IXFX180N25T

    Mfr.#: IXFX180N25T

    OMO.#: OMO-IXFX180N25T

    MOSFET 180A 250V
    IXFX150N30P3

    Mfr.#: IXFX150N30P3

    OMO.#: OMO-IXFX150N30P3

    MOSFET N-Channel: Power MOSFET w/Fast Diode
    IXFX180N15P

    Mfr.#: IXFX180N15P

    OMO.#: OMO-IXFX180N15P

    MOSFET 180 Amps 150V 0.011 Ohm Rds
    IXFX140N25T

    Mfr.#: IXFX140N25T

    OMO.#: OMO-IXFX140N25T

    MOSFET 140A 250V
    IXFX120N20

    Mfr.#: IXFX120N20

    OMO.#: OMO-IXFX120N20

    MOSFET 200V 120A
    IXFX120N65X2

    Mfr.#: IXFX120N65X2

    OMO.#: OMO-IXFX120N65X2-IXYS-CORPORATION

    MOSFET N-CH 650V 120A PLUS247
    IXFX150N20

    Mfr.#: IXFX150N20

    OMO.#: OMO-IXFX150N20-1190

    Nuovo e originale
    IXFX14N100

    Mfr.#: IXFX14N100

    OMO.#: OMO-IXFX14N100-IXYS-CORPORATION

    MOSFET 14 Amps 1000V 0.75 Rds
    IXFX180N10

    Mfr.#: IXFX180N10

    OMO.#: OMO-IXFX180N10-IXYS-CORPORATION

    MOSFET 100V 180A
    IXFX120N20

    Mfr.#: IXFX120N20

    OMO.#: OMO-IXFX120N20-IXYS-CORPORATION

    MOSFET 200V 120A
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
    Inserisci la quantità:
    Il prezzo attuale di IXFX180N07 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    24,18 USD
    24,18 USD
    10
    22,97 USD
    229,67 USD
    100
    21,76 USD
    2 175,84 USD
    500
    20,55 USD
    10 274,80 USD
    1000
    19,34 USD
    19 340,80 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
    Iniziare con
    Top