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FGH25N120FTDS

FGH25N120FTDS
Mfr. #:
FGH25N120FTDS
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 1200V 25A Field Stop Trench IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGH25N120FTDS Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGH25N120FTDS maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Serie:
FGH25N120FTDS
Confezione:
Tubo
Marca:
ON Semiconductor / Fairchild
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.225401 oz
Tags
FGH25N, FGH25, FGH2, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A, Field Stop Trench
***ark
Fs1Tigbt To247 25A 1200V Rohs Compliant: Yes
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
*** Source Electronics
Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3
***ure Electronics
IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1
***ource
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A
***ment14 APAC
IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ical
Trans IGBT Chip N-CH 1200V 40A 310000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT+ DIODE,1200V,20A,TO247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:310W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:310W
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in VCEsat and Vf; Lowest switching losses, highest efficiency; Tj(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents
***ineon SCT
Trans IGBT Chip N-CH 1200V 60A 349000mW 3-Pin(3+Tab) TO-247 Tube, PG-TO247-3, RoHS
***ark
Transistor, Igbt, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:349W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins;rohs Compliant: Yes
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
***ical
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
***Parts
IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole
***ure Electronics
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
***nell
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
***ource
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode43A, 1200V,,NPTN£¨
*** Source Electronics
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
***ure Electronics
HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***rchild Semiconductor
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***rchild Semiconductor
HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Parte # Mfg. Descrizione Azione Prezzo
FGH25N120FTDS
DISTI # FGH25N120FTDS-ND		ON SemiconductorIGBT 1200V 50A 313W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		2In Stock
  • 1:$7.8700
FGH25N120FTDS
DISTI # FGH25N120FTDS		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FGH25N120FTDS)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 17976
  • 1:$3.4900
  • 10:$3.4900
  • 25:$3.4900
  • 50:$3.4900
  • 100:$3.3900
  • 500:$3.3900
  • 1000:$3.2900
FGH25N120FTDS
DISTI # 64R3073		ON SemiconductorFS1TIGBT TO247 25A 1200V / TUBE0
  • 1:$8.0700
  • 10:$6.6600
  • 100:$5.5500
  • 500:$5.0800
  • 1000:$4.4500
  • 2500:$4.3000
FGH25N120FTDS
DISTI # 512-FGH25N120FTDS		ON SemiconductorIGBT Transistors 1200V 25A Field Stop Trench IGBT
RoHS: Compliant		328
  • 1:$7.4900
  • 10:$6.7700
  • 25:$6.4600
  • 100:$5.6100
  • 250:$5.3600
Immagine Parte # Descrizione
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OMO.#: OMO-0518CDMCCDS-1R0MC-SUMIDA

 Inductor Power Shielded/Molded Wirewound 1uH 20% 100KHz Metal 7.5A 17mOhm DCR 2020
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OMO.#: OMO-0518CDMCCDS-2R2MC-SUMIDA

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Mfr.#: 530L104KT16T

OMO.#: OMO-530L104KT16T-AMERICAN-TECHNICAL-CERAMICS

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 16volts 0.1uF 10%
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Mfr.#: LTV-817S-TA1

OMO.#: OMO-LTV-817S-TA1-LITE-ON

 Transistor Output Optocouplers Optocouple
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OMO.#: OMO-W7500P-WIZNET

 IC MCU 32BIT 128KB FLASH 64TQFP
Disponibilità
Azione:
333
Su ordine:
2316
Inserisci la quantità:
Il prezzo attuale di FGH25N120FTDS è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
7,49 USD
7,49 USD
10
6,77 USD
67,70 USD
25
6,46 USD
161,50 USD
100
5,61 USD
561,00 USD
250
5,36 USD
1 340,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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