2SJ372

Mfr. #:: 2SJ372
Produttore:: SHINDENGE
Descrizione:
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: 2SJ372 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Valore attributo

Produttore: SHINDENGE

categoria di prodotto: Chip IC

Tags: 2SJ37, 2SJ3, 2SJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SJ372 Descrizione

***(Formerly Allied Electronics): NTD20P06LT4G P-channel MOSFET Transistor; 15.5 A; 60 V; 3-Pin DPAK

*** Source Electronics: Trans MOSFET P-CH 60V 15.5A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 60V 15.5A DPAK

***ure Electronics: P-Channel 60 V 130 mOhm 65 W Tab Mount Power MOSFET - TO-252-3

***emi: Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:15.5A; On Resistance Rds(On):0.143Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -15.5 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 150 / Gate-Source Voltage V = 20 / Fall Time ns = 135 / Rise Time ns = 180 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 65

***ure Electronics: Single N-Channel 60 V 0.1 Ohms Flange Mount Power Mosfet - TO-220-3

***(Formerly Allied Electronics): TRANS MOSFET N-CH 60V 17A 3-PIN (3+TAB) TO-220AB

***nell: MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipati

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai

***ure Electronics: Single P-Channel 60 V 130 mOhm 21 nC SIPMOS® Power Mosfet - D2PAK

***nell: MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.101ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:81.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***(Formerly Allied Electronics): NTD18N06LT4G N-channel MOSFET Transistor; 18 A; 60 V; 3-Pin DPAK

***emi: Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ

***ure Electronics: N-Channel 60 V 54 mOhm 55 W Tab Mount Power MOSFET - TO-252-3

*** Source Electronics: Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 18A DPAK

***nell: MOSFET, N CHANNEL, 60V, 18A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.8V

***(Formerly Allied Electronics): NTB5605PT4G P-channel MOSFET Transistor; 18.5 A; 60 V; 3-Pin D2PAK

***ure Electronics: P-Channel 60 V 140 mOhm 88 W Surface Mount Power MOSFET - D2PAK-3

***ical: Trans MOSFET P-CH 60V 18.5A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: Single P-Channel Power MOSFET -60V -18.5A 140 mΩ

***ark: P CHANNEL MOSFET, -60V, 18.5A, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

***nell: MOSFET, P-CH, -60V, -18.5A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -18.5A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 88W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***(Formerly Allied Electronics): IRFZ24PBF N-channel MOSFET Transistor; 17 A; 60 V; 3-Pin TO-220AB

***ment14 APAC: N CHANNEL MOSFET, 55V, 17A TO-220AB; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:17A;

***ical: Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB

***ure Electronics: Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
2SJ307 DISTI # 2SJ307	ON Semiconductor	- Bulk (Alt: 2SJ307) Min Qty: 1 Container: Bulk	Americas - 0
2SJ307	SANYO Semiconductor Co Ltd	POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 250V, 1OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB	2000

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Disponibilità

Azione:: Available
Su ordine:: 2500
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10: ~~0,00 USD~~; ~~0,00 USD~~

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A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

2SJ37 31
2SJ3 336
2SJ 1533

2SJ372

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes