IXYH82N120C3

IXYH82N120C3
Mfr. #:
IXYH82N120C3
Produttore:
Littelfuse
Descrizione:
IGBT Transistors XPT IGBT C3-Class 1200V/160A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXYH82N120C3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH82N120C3 DatasheetIXYH82N120C3 Datasheet (P4-P6)
ECAD Model:
Maggiori informazioni:
IXYH82N120C3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247AD-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.75 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
160 A
Pd - Dissipazione di potenza:
1040 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
IXYH82N120
Confezione:
Tubo
Corrente continua del collettore Ic Max:
160 A
Marca:
IXYS
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
30
sottocategoria:
IGBT
Nome depositato:
XPT
Unità di peso:
1.340411 oz
Tags
IXYH8, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 200 A Flange Mount High-Speed IGBT - TO-247AD
***Components
In a Tube of 30, IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 200A 1250000mW 3-Pin(3+Tab) TO-247AD
***ark
Igbt, Single, 1.2Kv, 82A, To 247Ad Rohs Compliant: Yes
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 200A 3-Pin(3+Tab) TO-247AD
***i-Key
IGBT 1200V 200A 1250W TO247AD
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 82A, TO-247AD; DC Collector Current:82A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:1.25kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AD; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017)
***nell
IGBT, SINGOLO, 1.2KV, 82A, TO-247AD; Corrente di Collettore CC:82A; Tensione Saturaz Collettore-Emettitore Vce(on):3.2V; Dissipazione di Potenza Pd:1.25kW; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247AD; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXYH82N120C3
DISTI # V99:2348_15877674
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 200A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
22
  • 500:$8.5100
  • 250:$8.9280
  • 100:$9.8829
  • 50:$10.0239
  • 25:$10.8030
  • 10:$11.5310
  • 1:$12.4770
IXYH82N120C3
DISTI # IXYH82N120C3-ND
IXYS CorporationIGBT 1200V 200A 1250W TO247AD
RoHS: Compliant
Min Qty: 1
Container: Tube
387In Stock
  • 510:$9.7440
  • 270:$10.4160
  • 120:$11.4240
  • 30:$12.4320
  • 10:$13.4400
  • 1:$14.7800
IXYH82N120C3
DISTI # 27560558
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 200A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
22
  • 10:$11.5310
  • 1:$12.4770
IXYH82N120C3
DISTI # 77Y7625
IXYS CorporationIGBT, SINGLE, 1.2KV, 82A, TO-247AD,DC Collector Current:82A,Collector Emitter Saturation Voltage Vce(on):3.2V,Power Dissipation Pd:1.25kW,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247AD,No. of , RoHS Compliant: Yes288
  • 1:$14.0800
  • 10:$12.8000
  • 25:$11.8400
  • 50:$11.1600
  • 100:$10.8800
  • 250:$9.9200
  • 500:$9.2800
IXYH82N120C3
DISTI # 747-IXYH82N120C3
IXYS CorporationIGBT Transistors XPT IGBT C3-Class 1200V/160A
RoHS: Compliant
365
  • 1:$14.0800
  • 10:$12.8000
  • 25:$11.8400
  • 50:$11.1600
  • 100:$10.8800
  • 250:$9.9200
  • 500:$9.2800
IXYH82N120C3
DISTI # 8080290P
IXYS CorporationIGBT N-CH 1200V 200A XPT GENX3 TO247AD, TU327
  • 6:£11.0600
  • 15:£9.9300
IXYH82N120C3
DISTI # 8080290
IXYS CorporationIGBT N-CH 1200V 200A XPT GENX3 TO247AD, EA25
  • 1:£11.4800
  • 6:£11.0600
  • 15:£9.9300
IXYH82N120C3
DISTI # 2470021
IXYS CorporationIGBT, SINGLE, 1.2KV, 82A, TO-247AD
RoHS: Compliant
288
  • 1:$22.2900
  • 10:$20.2600
  • 25:$18.7400
  • 50:$17.6700
  • 100:$17.2200
  • 250:$15.7000
  • 500:$14.6800
IXYH82N120C3
DISTI # C1S331700061742
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 200A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
22
  • 10:$11.5310
  • 1:$12.4770
IXYH82N120C3
DISTI # 2470021
IXYS CorporationIGBT, SINGLE, 1.2KV, 82A, TO-247AD
RoHS: Compliant
379
  • 1:£9.9100
  • 5:£9.3500
  • 10:£8.5100
  • 50:£7.8700
  • 100:£7.2300
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IX21844G

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Gate Drivers 16 Pin SOIC gatedrvr 600v
IX21844N

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OMO.#: OMO-IX21844N

Gate Drivers 600V Half-Bridge Gate Driver
IX3120GS

Mfr.#: IX3120GS

OMO.#: OMO-IX3120GS

Gate Drivers 2.5A Output Gate Drv 60747-5-5 option
IX3180G

Mfr.#: IX3180G

OMO.#: OMO-IX3180G

Logic Output Optocouplers 2.5A Output Gate HighSpeed Optocupler
IX3180GS

Mfr.#: IX3180GS

OMO.#: OMO-IX3180GS

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Mfr.#: FFSP1065A

OMO.#: OMO-FFSP1065A

Schottky Diodes & Rectifiers SIC TO220 SBD 10A 650V
Disponibilità
Azione:
160
Su ordine:
2143
Inserisci la quantità:
Il prezzo attuale di IXYH82N120C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
14,08 USD
14,08 USD
10
12,80 USD
128,00 USD
25
11,84 USD
296,00 USD
50
11,16 USD
558,00 USD
100
10,88 USD
1 088,00 USD
250
9,92 USD
2 480,00 USD
500
9,28 USD
4 640,00 USD
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