S25FL128SAGBHV200

S25FL128SAGBHV200
Mfr. #:
S25FL128SAGBHV200
Produttore:
Cypress Semiconductor
Descrizione:
IC FLASH 128M SPI 133MHZ 24BGA FL-S
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
S25FL128SAGBHV200 Scheda dati
Consegna:
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Pagamento:
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ECAD Model:
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S25FL128SAGBHV200 maggiori informazioni S25FL128SAGBHV200 Product Details
Attributo del prodotto
Valore attributo
Produttore
Cypress Semiconductor Corp
categoria di prodotto
Memoria
Serie
FL-S
Confezione
Imballaggio alternativo del vassoio
Pacchetto-Custodia
24-TBGA
Temperatura di esercizio
-40°C ~ 105°C (TA)
Interfaccia
Seriale SPI
Tensione di alimentazione
2.7 V ~ 3.6 V
Pacchetto-dispositivo-fornitore
24-BGA (6x8)
Dimensione della memoria
128M (16M x 8)
Tipo di memoria
FLASH - NOR
Velocità
133MHz
Formato-Memoria
VELOCE
Tags
S25FL128SAGBHV, S25FL128SAGB, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ure Electronics
S25FL128S Series 3.6V 128 Mb (16 M x 8) Industrial Grade Serial Flash - BGA-24
***ark
Tray Pkged / 128-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 133-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 64Kb, Bga-Fab024 In Tray Packing
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descrizione Azione Prezzo
S25FL128SAGBHV200
DISTI # S25FL128SAGBHV200-ND
Cypress SemiconductorIC FLASH 128M SPI 133MHZ 24BGA
RoHS: Compliant
Min Qty: 1
Container: Tray
On Order
  • 1014:$2.5526
  • 676:$2.6848
  • 338:$2.7875
  • 100:$2.7979
  • 50:$3.1198
  • 25:$3.1372
  • 10:$3.2070
  • 1:$3.5300
S25FL128SAGBHV200
DISTI # 51Y0984
Cypress SemiconductorTRAY PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, BGA-FAB024 IN TRAY PACKING0
  • 1:$2.9400
  • 10:$2.6500
  • 25:$2.6000
  • 50:$2.4400
  • 100:$2.3200
  • 200:$2.2700
  • 500:$2.2100
  • 1000:$2.1600
S25FL128SAGBHV200Spansion 
RoHS: Not Compliant
39
  • 1000:$2.9600
  • 500:$3.1100
  • 100:$3.2400
  • 25:$3.3800
  • 1:$3.6400
S25FL128SAGBHV200
DISTI # 727-S25FL128SAGBHV20
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 1:$4.8700
  • 10:$4.3500
  • 25:$3.9200
  • 100:$3.5700
  • 250:$3.2200
Immagine Parte # Descrizione
S25FL128SAGMFI000

Mfr.#: S25FL128SAGMFI000

OMO.#: OMO-S25FL128SAGMFI000

NOR Flash 128Mb 3V 133MHz Serial NOR Flash
S25FL128SAGMFVR03

Mfr.#: S25FL128SAGMFVR03

OMO.#: OMO-S25FL128SAGMFVR03

NOR Flash Nor
S25FL128SAGMFB001

Mfr.#: S25FL128SAGMFB001

OMO.#: OMO-S25FL128SAGMFB001-CYPRESS-SEMICONDUCTOR

Flash Memory 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TUBE PACKING)
S25FL128SAGMFIR13

Mfr.#: S25FL128SAGMFIR13

OMO.#: OMO-S25FL128SAGMFIR13-CYPRESS-SEMICONDUCTOR

Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN T&R PACKING, RESET# + VIO
S25FL128SAGBHI203

Mfr.#: S25FL128SAGBHI203

OMO.#: OMO-S25FL128SAGBHI203-CYPRESS-SEMICONDUCTOR

IC FLASH 128M SPI 133MHZ 24BGA FL-S
S25FL128SAGMFB010

Mfr.#: S25FL128SAGMFB010

OMO.#: OMO-S25FL128SAGMFB010-CYPRESS-SEMICONDUCTOR

Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING
S25FL128SAGBHN203

Mfr.#: S25FL128SAGBHN203

OMO.#: OMO-S25FL128SAGBHN203-CYPRESS-SEMICONDUCTOR

IC NOR FL-S
S25FL128SAGBHI200

Mfr.#: S25FL128SAGBHI200

OMO.#: OMO-S25FL128SAGBHI200-CYPRESS-SEMICONDUCTOR

IC FLASH 128M SPI 133MHZ 24BGA FL-S
S25FL128P0XMFI0

Mfr.#: S25FL128P0XMFI0

OMO.#: OMO-S25FL128P0XMFI0-1190

Nuovo e originale
S25FL128SAGMFAR13

Mfr.#: S25FL128SAGMFAR13

OMO.#: OMO-S25FL128SAGMFAR13-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di S25FL128SAGBHV200 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,93 USD
2,93 USD
10
2,79 USD
27,87 USD
100
2,64 USD
264,06 USD
500
2,49 USD
1 246,95 USD
1000
2,35 USD
2 347,20 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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