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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BLS6G2731-120,112 DISTI # 568-12825-ND | Ampleon | RF FET LDMOS 60V 13.5DB SOT502A RoHS: Compliant Min Qty: 1 Container: Tray | 55In Stock |
|
| BLS6G2731-120,112 DISTI # BLS6G2731-120,112 | Ampleon | RF Components - Rail/Tube (Alt: BLS6G2731-120,112) RoHS: Compliant Min Qty: 20 Container: Tube | Americas - 0 | |
| BLS6G2731-120,112 DISTI # 70R2898 | NXP Semiconductors | N CHANNEL S-BAND LDMOS TRANSISTOR, 32V, 2700MHZ - 3100MHZ, 2-SOT-502B,Drain Source Voltage Vds:32V,Continuous Drain Current Id:33A,Power Dissipation Pd:120W,Operating Frequency Min:2.7GHz,Operating Frequency Max:3.1GHz,MSL:- RoHS Compliant: Yes | 0 | |
| BLS6G2731-120.112 | NXP Semiconductors | 1 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: BLS6G27-10G OMO.#: OMO-BLS6G27-10G-1190 |
Nuovo e originale |
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|
Mfr.#: BLS6G2731-6G112 OMO.#: OMO-BLS6G2731-6G112-1190 |
- Bulk (Alt: BLS6G2731-6G112) |
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Mfr.#: BLS6G2731S-120 OMO.#: OMO-BLS6G2731S-120-1190 |
Nuovo e originale |
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Mfr.#: BLS6G2731S-120112 OMO.#: OMO-BLS6G2731S-120112-1190 |
- Bulk (Alt: BLS6G2731S-120112) |
|
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Mfr.#: BLS6G2933P-200 OMO.#: OMO-BLS6G2933P-200-1190 |
Nuovo e originale |
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Mfr.#: BLS6G2933S-130112 OMO.#: OMO-BLS6G2933S-130112-1190 |
Nuovo e originale |
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Mfr.#: BLS6G2933S130112 OMO.#: OMO-BLS6G2933S130112-1190 |
Nuovo e originale |
|
Mfr.#: BLS6G2731S-130,112 |
RF MOSFET Transistors LDMOS S-BAND RADAR POWER TRANSISTOR |
|
Mfr.#: BLS6G2731-6G,112 OMO.#: OMO-BLS6G2731-6G-112-AMPLEON |
RF MOSFET Transistors Trans MOSFET N-CH 60V 3.5A 3-Pin |
|
Mfr.#: BLS6G2735L-30,112 |
RF MOSFET Transistors 60V 580mOhms |