FF150R12ME3G

Mfr. #:: FF150R12ME3G
Produttore:: Infineon Technologies
Descrizione:: IGBT Modules N-CH 1.2KV 200A
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FF150R12ME3G Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: Moduli IGBT

Prodotto:: Moduli di silicio IGBT

Configurazione:: Dual

Tensione collettore-emettitore VCEO Max:: 1200 V

Tensione di saturazione collettore-emettitore:: 1.7 V

Corrente continua del collettore a 25 C:: 200 A

Corrente di dispersione gate-emettitore:: 400 nA

Pd - Dissipazione di potenza:: 695 W

Pacchetto/custodia:: EconoDUAL-3

Temperatura di esercizio minima:: - 40 C

Temperatura massima di esercizio:: + 125 C

Confezione:: Vassoio

Altezza:: 17 mm

Lunghezza:: 152 mm

Larghezza:: 62 mm

Marca:: Tecnologie Infineon

Stile di montaggio:: Montaggio su telaio

Tensione massima dell'emettitore di gate:: 20 V

Tipologia di prodotto:: Moduli IGBT

Quantità confezione di fabbrica:: 10

sottocategoria:: IGBT

Parte # Alias:: FF150R12ME3GBOSA1 SP000317332

Unità di peso:: 12.169517 oz

Tags: FF150R12ME, FF150R12M, FF150R12, FF150R1, FF150R, FF150, FF15, FF1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF150R12ME3G Descrizione

***et Europe: Trans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3

***i-Key: IGBT MOD 1200V 200A 695W

***omponent: Infineon power module

***et: MEDIUM POWER ECONO

***ineon: EconoDUAL 3 1200V dual IGBT module with Trench/Fieldstop IGBT3 and Emitter Controlled High Efficiency diode | Summary of Features: Easy separation of DC and AC; Optimized Thermal Resistance Case to Heat Sink; Highest Power Density for compact Inverter Designs | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FF150R12ME3GBOSA1 DISTI # FF150R12ME3GBOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 150A RoHS: Not compliant Min Qty: 10 Container: Bulk	Limited Supply - Call	10:$92.3980
FF150R12ME3G DISTI # FF150R12ME3G	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 - Bulk (Alt: FF150R12ME3G) RoHS: Compliant Min Qty: 5 Container: Bulk	Americas - 0	50:$79.7900 25:$81.2900 15:$84.0900 10:$87.2900 5:$90.4900
FF150R12ME3G DISTI # SP000317332	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 (Alt: SP000317332) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€74.0900 500:€75.8900 100:€78.0900 50:€80.7900 25:€83.5900 10:€91.9900 1:€113.7900
FF150R12ME3GBOSA1 DISTI # FF150R12ME3GBOSA1	Infineon Technologies AG	MEDIUM POWER ECONO - Bulk (Alt: FF150R12ME3GBOSA1) Min Qty: 5 Container: Bulk	Americas - 0	50:$74.4900 25:$75.7900 15:$78.4900 10:$81.3900 5:$84.4900
FF150R12ME3GBOSA1 DISTI # FF150R12ME3GBOSA1	Infineon Technologies AG	MEDIUM POWER ECONO - Trays (Alt: FF150R12ME3GBOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$75.6900 60:$77.5900 40:$79.4900 20:$81.5900 10:$82.6900
FF150R12ME3G DISTI # 641-FF150R12ME3G	Infineon Technologies AG	IGBT Modules N-CH 1.2KV 200A	7	1:$100.5700 5:$98.7300 10:$94.2800 25:$91.1400
2SP0115T2A0-FF150R12ME3G DISTI # 869-A0-FF150R12ME3G	Power Integrations	Power Management Modules 2SP0115T PI Gate Driver ONLY RoHS: Not compliant	0	12:$87.2800 48:$80.7700
2SP0115T2B0-FF150R12ME3G DISTI # 869-B0-FF150R12ME3G	Power Integrations	Power Management Modules 2SP0115T PI Gate Driver ONLY RoHS: Not compliant	0	12:$96.0100 48:$88.8500
DB01-FF150R12ME3G DISTI # 869-FF150R12M3G	Power Integrations	Power Management Modules DB01 RoHS: Not compliant	0
FF150R12ME3G	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	428	1000:$82.7100 500:$87.0600 100:$90.6400 25:$94.5300 1:$101.8000
FF150R12ME3GBOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	140	1000:$77.2000 500:$81.2600 100:$84.6000 25:$88.2300 1:$95.0100
2SD316EI-12-DB01-FF150R12ME3G DISTI # DB01-FF150R12ME	Power Integrations	PLUG-AND-PLAY IGBT DRIVER RoHS: Not Compliant	0	12:$166.0800 40:$153.6800

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: EYG-S0612ZLWF

OMO.#: OMO-EYG-S0612ZLWF

Thermal Interface Products Soft PGS - IGBT Mod Mitsubishi Elec.

Mfr.#: EYG-S0612ZLWF

OMO.#: OMO-EYG-S0612ZLWF-PANASONIC

Heat Insulating Sheet

Mfr.#: ISO5852SDWEVM-017

OMO.#: OMO-ISO5852SDWEVM-017-TEXAS-INSTRUMENTS

DEVELOPMENT INTERFACE

Disponibilità

Azione:: Available
Su ordine:: 1990
Inserisci la quantità:

Il prezzo attuale di FF150R12ME3G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~100,57 USD~~; ~~100,57 USD~~

5: ~~98,73 USD~~; ~~493,65 USD~~

10: ~~94,28 USD~~; ~~942,80 USD~~

25: ~~91,14 USD~~; ~~2 278,50 USD~~

100: ~~84,87 USD~~; ~~8 487,00 USD~~

Iniziare con

FF150R12ME 3
FF150R12M 6
FF150R12 32
FF150R1 38
FF150R 40
FF150 51
FF15 60
FF1 401

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FF150R12ME3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes