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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FQP12N60C DISTI # FQP12N60C-ND | ON Semiconductor | MOSFET N-CH 600V 12A TO-220 Min Qty: 1 Container: Tube | 891In Stock |
|
| FQP12N60C DISTI # 33932448 | ON Semiconductor | QFC 600V 650MOHM TO220 | 100 |
|
| FQP12N60C DISTI # FQP12N60C | ON Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP12N60C) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| FQP12N60C DISTI # FQP12N60C | ON Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP12N60C) Min Qty: 272 Container: Bulk | Americas - 0 |
|
| FQP12N60C DISTI # 97K0161 | ON Semiconductor | MOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.53ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:225W,MSL:-RoHS Compliant: Yes RoHS: Compliant | 1759 |
|
| FQP12N60C DISTI # 512-FQP12N60C | ON Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series RoHS: Compliant | 939 |
|
| FQP12N60C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 17000 |
|
| FQP12N60C | Fairchild Semiconductor Corporation | 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 72 |
|
| FQP12N60C | Fairchild Semiconductor Corporation | 350 | ||
| FQP12N60C | Fairchild Semiconductor Corporation | 90 | ||
| FQP12N60C DISTI # 1095057 | ON Semiconductor | MOSFET, N, TO-220 RoHS: Compliant | 2314 |
|
| FQP12N60C DISTI # 1095057 | ON Semiconductor | MOSFET, N, TO-220 RoHS: Compliant | 2334 |
|
| FQP12N60C | ISC | TO-220 | 5000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: FQP12N60C/FQPF12N60C |
Nuovo e originale |