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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BDP953E6327HTSA1 DISTI # BDP953E6327HTSA1TR-ND | Infineon Technologies AG | TRANS NPN 100V 3A SOT-223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BDP953E6327HTSA1 DISTI # BDP953E6327HTSA1CT-ND | Infineon Technologies AG | TRANS NPN 100V 3A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BDP953E6327HTSA1 DISTI # BDP953E6327HTSA1DKR-ND | Infineon Technologies AG | TRANS NPN 100V 3A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BDP 953 E6327 DISTI # 726-BDP953E6327 | Infineon Technologies AG | Bipolar Transistors - BJT NPN Silicon AF Power TRANSISTOR RoHS: Compliant | 0 | |
| BDP953E6327 | Infineon Technologies AG | 3000 |
| |
| BDP953E6327 | Infineon Technologies AG | 895 | ||
| BDP953-E6327 | Infineon Technologies AG | SI, POWER TRANSISTOR | 855 |
|
| BDP953-E6327 | Infineon Technologies AG | SI, POWER TRANSISTOR | 2400 |
|
| BDP953E6327 | Infineon Technologies AG | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin RoHS: Not Compliant | Europe - 2000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: BDP 950 H6327 OMO.#: OMO-BDP-950-H6327 |
Bipolar Transistors - BJT AF TRANSISTOR |
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Mfr.#: BDP 953 H6327 OMO.#: OMO-BDP-953-H6327 |
Bipolar Transistors - BJT AF TRANSISTOR |
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Mfr.#: BDP 950 H6327 OMO.#: OMO-BDP-950-H6327-1190 |
Bipolar Transistors - BJT AF TRANSISTOR |
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Mfr.#: BDP 953 H6327 |
Trans GP BJT NPN 100V 3A 4-Pin(3+Tab) SOT-223 T/R (Alt: BDP 953 H6327) |
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Mfr.#: BDP 953 H6327 TR |
Nuovo e originale |
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Mfr.#: BDP 954 H6327 |
Bipolar Transistors - BJT AF TRANSISTOR |
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Mfr.#: BDP 953 E6327 OMO.#: OMO-BDP-953-E6327-122 |
Bipolar Transistors - BJT NPN Silicon AF Power TRANSISTOR |