MSC010SDA070K

MSC010SDA070K
Mfr. #:
MSC010SDA070K
Produttore:
Microchip / Microsemi
Descrizione:
Schottky Diodes & Rectifiers 700 V, 10 A SiC SBD
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MSC010SDA070K Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
MSC010SDA070K maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-2
Se - Corrente diretta:
10 A
Vrrm - Tensione inversa ripetitiva:
700 V
Vf - Tensione diretta:
1.5 V
Configurazione:
Separare
Tecnologia:
SiC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
MSC0
Confezione:
Tubo
Marca:
Microchip / Microsemi
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
1
sottocategoria:
Diodi e raddrizzatori
Vr - Tensione inversa:
700 V
Tags
MSC010S, MSC010, MSC01, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
DIODE SCHOTTKY 700V 10A TO220-3
***hardson RFPD
SILICON CARBIDE DIODE
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Immagine Parte # Descrizione
MSC010SDA120K

Mfr.#: MSC010SDA120K

OMO.#: OMO-MSC010SDA120K

Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
MSC010SDA120B

Mfr.#: MSC010SDA120B

OMO.#: OMO-MSC010SDA120B

Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
MSC010SDA070K

Mfr.#: MSC010SDA070K

OMO.#: OMO-MSC010SDA070K

Schottky Diodes & Rectifiers 700 V, 10 A SiC SBD
MSC010-A0-0004

Mfr.#: MSC010-A0-0004

OMO.#: OMO-MSC010-A0-0004-1190

Nuovo e originale
MSC010A04074

Mfr.#: MSC010A04074

OMO.#: OMO-MSC010A04074-1190

Nuovo e originale
MSC010SDA120B

Mfr.#: MSC010SDA120B

OMO.#: OMO-MSC010SDA120B-MICROSEMI

SILICON CARBIDE DIODE
Disponibilità
Azione:
185
Su ordine:
2168
Inserisci la quantità:
Il prezzo attuale di MSC010SDA070K è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,35 USD
5,35 USD
5
5,07 USD
25,35 USD
10
4,88 USD
48,80 USD
25
4,69 USD
117,25 USD
50
4,52 USD
226,00 USD
100
4,15 USD
415,00 USD
250
4,00 USD
1 000,00 USD
500
3,86 USD
1 930,00 USD
1000
3,54 USD
3 540,00 USD
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