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IPD60R180P7SAUMA1

IPD60R180P7SAUMA1
Mfr. #:
IPD60R180P7SAUMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET CONSUMER
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD60R180P7SAUMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPD60R180P7SAUMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
18 A
Rds On - Resistenza Drain-Source:
145 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
25 nC
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
72 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Bobina
Serie:
CoolMOS P7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
8 ns
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
12 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
85 ns
Tempo di ritardo di accensione tipico:
14 ns
Parte # Alias:
IPD60R180P7S SP001658138
Unità di peso:
0.011993 oz
Tags
IPD60R180P7S, IPD60R180P, IPD60R18, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600V 180 mOhm 25 nC CoolMOS™ Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 600V 18A TO252-3
***ronik
N-CH 600V 18A 180mOhm TO252-3
***ark
Mosfet, N-Ch, 600V, 18A, 72W, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 18A, 72W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:72W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 18A, 72W, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:72W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descrizione Azione Prezzo
IPD60R180P7SAUMA1
DISTI # V72:2272_18205318		Infineon Technologies AGIPD60R180P7SAUMA11293
  • 1000:$0.7197
  • 500:$0.8547
  • 250:$0.9566
  • 100:$0.9578
  • 25:$1.1751
  • 10:$1.1773
  • 1:$1.3559
IPD60R180P7SAUMA1
DISTI # V36:1790_18205318		Infineon Technologies AGIPD60R180P7SAUMA10
    IPD60R180P7SAUMA1
    DISTI # IPD60R180P7SAUMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 18A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		6859In Stock
    • 1000:$0.9362
    • 500:$1.1093
    • 100:$1.3978
    • 10:$1.7150
    • 1:$1.8900
    IPD60R180P7SAUMA1
    DISTI # IPD60R180P7SAUMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 600V 18A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		6859In Stock
    • 1000:$0.9362
    • 500:$1.1093
    • 100:$1.3978
    • 10:$1.7150
    • 1:$1.8900
    IPD60R180P7SAUMA1
    DISTI # IPD60R180P7SAUMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 600V 18A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		5000In Stock
    • 12500:$0.8096
    • 5000:$0.8249
    • 2500:$0.8529
    IPD60R180P7SAUMA1
    DISTI # 31340871    		Infineon Technologies AGIPD60R180P7SAUMA11293
    • 1000:$0.7737
    • 500:$0.9188
    • 250:$1.0283
    • 100:$1.0296
    • 25:$1.2632
    • 10:$1.2656
    IPD60R180P7SAUMA1
    DISTI # IPD60R180P7S    		Infineon Technologies AGCONSUMER (Alt: IPD60R180P7S)
    RoHS: Compliant
    Min Qty: 2500    		Asia - 12500
    • 2500:$0.8487
    • 5000:$0.8213
    • 7500:$0.7956
    • 12500:$0.7715
    • 25000:$0.7600
    • 62500:$0.7488
    • 125000:$0.7380
    IPD60R180P7SAUMA1
    DISTI # IPD60R180P7SAUMA1    		Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPD60R180P7SAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.7329
    • 5000:$0.7069
    • 10000:$0.6809
    • 15000:$0.6579
    • 25000:$0.6469
    IPD60R180P7SAUMA1
    DISTI # SP001658138    		Infineon Technologies AGCONSUMER (Alt: SP001658138)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 0
    • 2500:€0.9419
    • 5000:€0.7699
    • 10000:€0.7059
    • 15000:€0.6519
    • 25000:€0.6049
    IPD60R180P7SAUMA1
    DISTI # 93AC7114    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, 72W, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
    • 1000:$0.5910
    • 500:$0.7140
    • 250:$0.7610
    • 100:$0.8080
    • 50:$0.8770
    • 25:$0.9470
    • 10:$1.0200
    • 1:$1.1900
    IPD60R180P7SAUMA1
    DISTI # 726-IPD60R180P7SAUMA    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		24242
    • 1:$1.4900
    • 10:$1.2700
    • 100:$1.0100
    • 500:$0.8920
    • 1000:$0.7390
    IPD60R180P7SAUMA1
    DISTI # 2986466    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, 72W, TO-252
    RoHS: Compliant    		0
    • 5000:$1.0100
    • 1000:$1.0400
    • 500:$1.2500
    • 250:$1.3700
    • 100:$1.4600
    • 25:$1.7700
    • 5:$1.9800
    IPD60R180P7SAUMA1
    DISTI # 2986466    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, 72W, TO-252
    RoHS: Compliant    		0
    • 500:£0.7300
    • 250:£0.7960
    • 100:£0.8580
    • 25:£1.0900
    • 5:£1.1900
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    IPD60R280P7ATMA1

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    OMO.#: OMO-IPD60R280P7ATMA1

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    OMO.#: OMO-STM8S003F3P6TR

    		 8-bit Microcontrollers - MCU 8-Bit MCU Value Line 8kB Flash 16MHz EE
    ERJ-1TYJ3R3U

    Mfr.#: ERJ-1TYJ3R3U

    OMO.#: OMO-ERJ-1TYJ3R3U

    		 Thick Film Resistors - SMD 2512 3.3ohms 5% Tol AEC-Q200
    UCC28056DBVR

    Mfr.#: UCC28056DBVR

    OMO.#: OMO-UCC28056DBVR

    		 Power Factor Correction - PFC 6-pin high performance CRM/DCM PFC controller 6-SOT-23 -40 to 125
    ERJ-3GEYJ105V

    Mfr.#: ERJ-3GEYJ105V

    OMO.#: OMO-ERJ-3GEYJ105V

    		 Thick Film Resistors - SMD 0603 1Mohms 5% Tol AEC-Q200
    ERJ-3GEY0R00V

    Mfr.#: ERJ-3GEY0R00V

    OMO.#: OMO-ERJ-3GEY0R00V

    		 Thick Film Resistors - SMD 0603 Zero Ohms
    06035C104KAT4A

    Mfr.#: 06035C104KAT4A

    OMO.#: OMO-06035C104KAT4A-AVX

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.1uF 10% X7R
    STM8S003F3P6TR

    Mfr.#: STM8S003F3P6TR

    OMO.#: OMO-STM8S003F3P6TR-STMICROELECTRONICS

    		 IC MCU 8BIT 8KB FLASH 20TSSOP
    IPD60R280P7ATMA1

    Mfr.#: IPD60R280P7ATMA1

    OMO.#: OMO-IPD60R280P7ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 12A TO252-3
    Disponibilità
    Azione:
    21
    Su ordine:
    2004
    Inserisci la quantità:
    Il prezzo attuale di IPD60R180P7SAUMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,49 USD
    1,49 USD
    10
    1,27 USD
    12,70 USD
    100
    1,01 USD
    101,00 USD
    500
    0,89 USD
    446,00 USD
    1000
    0,74 USD
    739,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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