BSC030N03LSGATMA1

Mfr. #:: BSC030N03LSGATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CH 30V 100A TDSON-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSC030N03LSGATMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: FET - Single

Serie: OptiMOS

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: BSC030N03LS BSC030N03LSGXT G SP000237661

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: 8-PowerTDFN

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PG-TDSON-8

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 69W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

Ingresso-Capacità-Ciss-Vds: 4300pF @ 15V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 23A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 3 mOhm @ 30A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

Gate-Carica-Qg-Vgs: 55nC @ 10V

Polarità del transistor: Canale N

Tags: BSC030N03LSG, BSC030N03L, BSC030N03, BSC030N0, BSC030N, BSC030, BSC03, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC030N03LSGATMA1 Descrizione

***ure Electronics: N-Channel 30 V 3 mOhm OptiMOS3 Power-MOSFET - PG-TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSC030N03LSGATMA1 DISTI # V72:2272_06384550	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant	3707	3000:$0.3750 1000:$0.3789 500:$0.4630 250:$0.5154 100:$0.5212 25:$0.6420 10:$0.6498 1:$0.7405
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	309In Stock	1000:$0.4886 500:$0.6189 100:$0.7981 10:$1.0100 1:$1.1400
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	309In Stock	1000:$0.4886 500:$0.6189 100:$0.7981 10:$1.0100 1:$1.1400
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.4206
BSC030N03LSGATMA1 DISTI # 31273903	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant	3707	3000:$0.3750 1000:$0.3789 500:$0.4630 250:$0.5154 100:$0.5212 25:$0.6420 20:$0.6498
BSC030N03LSGXT/IBM DISTI # BSC030N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 30000	5000:$0.4119 10000:$0.4109 20000:$0.4099 30000:$0.4089 50000:$0.4069
BSC030N03LSGATMA1 DISTI # 60R2485	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	4606	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LS G DISTI # 726-BSC030N03LS-G	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	4848	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LSGATMA1 DISTI # 726-BSC030N03LSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	4892	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	500	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
BSC030N03LSGATMA1 DISTI # 8259112P	Infineon Technologies AG	MOSFET N-CH 23A 30V OPTIMOS3 TDSON8EP, RL	1700	100:£0.2570
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,98A,69W,PG-TDSON-8	2739	1:$0.6732 3:$0.5972 10:$0.5016 100:$0.4499 1000:$0.4190
BSC030N03LSGATMA1 DISTI # C1S322000606399	Infineon Technologies AG	MOSFETs RoHS: Compliant	3707	250:$0.5326 100:$0.5342 25:$0.6523 10:$0.6551
BSC030N03LSGATMA1 DISTI # 1775436	Infineon Technologies AG	MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant	4606	1:$1.5100 10:$1.2800 100:$0.9800 500:$0.8660 1000:$0.6840 5000:$0.6130
BSC030N03LSGATMA1 DISTI # 1775436	Infineon Technologies AG	MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant	4606	5:£0.6060 25:£0.5490 100:£0.4120 250:£0.3690 500:£0.3260

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSC030N04NS G OMO.#: OMO-BSC030N04NS-G	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC030N03MSGATMA1 OMO.#: OMO-BSC030N03MSGATMA1	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
	Mfr.#: BSC030N03LS G OMO.#: OMO-BSC030N03LS-G	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC030N03LS G OMO.#: OMO-BSC030N03LS-G-1190	Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: BSC030N03LS G)
	Mfr.#: BSC030N03LSG OMO.#: OMO-BSC030N03LSG-1190	Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC030N03MS G OMO.#: OMO-BSC030N03MS-G-1190	Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP
	Mfr.#: BSC030N03MSG OMO.#: OMO-BSC030N03MSG-1190	Nuovo e originale
	Mfr.#: BSC030N03SL OMO.#: OMO-BSC030N03SL-1190	Nuovo e originale
	Mfr.#: BSC030N04NS G OMO.#: OMO-BSC030N04NS-G-1190	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC030N04NSGATMA1 OMO.#: OMO-BSC030N04NSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 100A TDSON-8

Disponibilità

Azione:: Available
Su ordine:: 4000
Inserisci la quantità:

Il prezzo attuale di BSC030N03LSGATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,56 USD~~; ~~0,56 USD~~

10: ~~0,53 USD~~; ~~5,27 USD~~

100: ~~0,50 USD~~; ~~49,95 USD~~

500: ~~0,47 USD~~; ~~235,90 USD~~

1000: ~~0,44 USD~~; ~~444,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

BSC030N03LSG 4
BSC030N03L 5
BSC030N03 12
BSC030N0 20
BSC030N 21
BSC030 27
BSC03 76
BSC0 601
BSC 999

Prodotti più recenti

BCR601 - Linear LED IC with Active Headroom Contro

Infineon's BCR601 is a linear LED controller IC regulating the LED current with an external driver transistor.
BCR602 - Linear LED IC Controller

Infineon's BCR602 is a linear LED controller IC regulating the LED current by means of an external driver transistor.
600V Trench IGBTs

International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
800 V CoolMOS™ P7 Power Transistors

Infineon's 800 V CoolMOS™ P7 series set a benchmark in 800 V super junction technologies by combining best-in-class performance with state-of-the-art usability.
Compare BSC030N03LSGATMA1

BSC030N03LSG vs BSC030N03LSGATMA1 vs BSC030N03LSGATMA1INFINEO
OptiMOS™-5 40 V MOSFETs in SS08

Infineon’s OptiMOS™-5 40 V in SS08 is the little MOSFET that enables big current.

More Newest Products

BSC030N03LSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes