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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI9407AEY-T1-E3 DISTI # 70026076 | Vishay Siliconix | MOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.12Ohm,ID +/-3.5A,SO-8,PD 3W,VGS +/-20V,gF RoHS: Compliant | 0 |
|
| SI9407AEY | Vishay Siliconix | MOSFET Transistor, P-Channel, SO | 1 |
|
| SI9407AEY | Vishay Siliconix | MOSFET Transistor, P-Channel, SO | 16 |
|
| SI9407AEY | Vishay Intertechnologies | Transistor RoHS: Not Compliant | Europe - 226 | |
| SI9407AEYT1E3 | Vishay Intertechnologies | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1870 | |
| SI9407AEY-T1-E3 DISTI # 1470138 | Vishay Intertechnologies | MOSFET, P, SO-8 RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI9424BDY-T1-E3 OMO.#: OMO-SI9424BDY-T1-E3-VISHAY |
IGBT Transistors MOSFET 20V 7.1A 0.025Ohm |
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Mfr.#: SI9410BDY-T1-GE3 OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY |
IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V |
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Mfr.#: SI9407BDY-T1-GE OMO.#: OMO-SI9407BDY-T1-GE-1190 |
Nuovo e originale |
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Mfr.#: SI9410BDY OMO.#: OMO-SI9410BDY-1190 |
POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET |
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Mfr.#: SI9410DY-T1 TXX9324CW |
Nuovo e originale |
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Mfr.#: SI9420DY OMO.#: OMO-SI9420DY-1190 |
MOSFET 200V 1A 2.5W |
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Mfr.#: SI9424BDY OMO.#: OMO-SI9424BDY-1190 |
MOSFET, P, SO-8 |
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Mfr.#: SI9424DY-NL OMO.#: OMO-SI9424DY-NL-1190 |
Nuovo e originale |
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Mfr.#: SI9424DY-T1-GE3 OMO.#: OMO-SI9424DY-T1-GE3-1190 |
Nuovo e originale |
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Mfr.#: SI9433BDY OMO.#: OMO-SI9433BDY-1190 |
P CHANNEL MOSFET |