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FGA15S125P

FGA15S125P
Mfr. #:
FGA15S125P
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors FORECAST FG
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA15S125P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGA15S125P maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3PN-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1250 V
Tensione di saturazione collettore-emettitore:
2.72 V
Tensione massima dell'emettitore di gate:
25 V
Corrente continua del collettore a 25 C:
30 A
Pd - Dissipazione di potenza:
136 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
FGA15S125P
Confezione:
Tubo
Corrente continua del collettore Ic Max:
15 A
Marca:
ON Semiconductor / Fairchild
Corrente di dispersione gate-emettitore:
500 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.225789 oz
Tags
FGA15, FGA1, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
***emi
IGBT, 1250V, 15A, Shorted-anode
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
***ark
RAIL / 1250V 15A FS SA Trench IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
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Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
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HGTP5N120BND Series 1200 V 21 A Flange Mount N-Channel IGBT - TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
RAIL / 1200V,21A,NPT SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST
***rchild Semiconductor
HGTP5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and motor control.
***et
Trans IGBT Chip N-CH 1.25KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
***emi
1250V, 25A, Shorted-anode IGBT
***ark
RAIL / 1250V 25A FS SA Trench IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 1200 V 35 A Flange Mount IGBT - TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1200V 6A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
7 A, 1200 V very fast IGBT with Ultrafast diode
***r Electronics
Insulated Gate Bipolar Transistor, 6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS - STGF3NC120HD - IGBT, N 1200V 3A TO-220FP
***nell
IGBT, N 1200V 3A TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220FP; No. of Pins: 3Pins
***ical
Trans IGBT Chip N-CH 1200V 14A 75000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
7 A, 1200 V very fast IGBT with Ultrafast diode
***nell
IGBT, SINGLE, 1.2KV, 14A, TO-220AB; DC Collector Current: 14A; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of
***ical
Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(3+Tab) IPAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 390pF 100volts C0G +/-5% Hi Rel
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STGD5NB120SZ Series 1200 V 10 A Low Drop Internally Clamped IGBT - TO-251
***nell
IGBT, SINGLE, 1.2KV, 10A, TO-251; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.3V; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
FGA15S125P
DISTI # V36:1790_06359156		ON Semiconductor1250V 15A FS SA TRENCH IGBT450
  • 10000:$0.7741
  • 5000:$0.8058
  • 2500:$0.8366
  • 1000:$0.8828
  • 500:$1.0725
  • 100:$1.2340
  • 10:$1.5387
  • 1:$1.9831
FGA15S125P
DISTI # FGA15S125P-ND		ON SemiconductorIGBT 1250V 30A 136W TO3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		397In Stock
  • 5400:$0.8680
  • 2700:$0.8789
  • 900:$1.1393
  • 450:$1.3020
  • 25:$1.6276
  • 10:$1.7250
  • 1:$1.9200
FGA15S125P
DISTI # 27477665		ON Semiconductor1250V 15A FS SA TRENCH IGBT450
  • 10000:$0.7867
  • 5000:$0.7989
  • 2500:$0.8296
  • 1000:$0.8900
  • 500:$1.0692
  • 450:$1.2276
FGA15S125P
DISTI # 30209530		ON Semiconductor1250V 15A FS SA TRENCH IGBT450
  • 10000:$0.7741
  • 5000:$0.8058
  • 2500:$0.8366
  • 1000:$0.8828
  • 500:$1.0725
  • 100:$1.2098
  • 10:$1.5387
  • 8:$1.8029
FGA15S125P
DISTI # FGA15S125P		ON SemiconductorTrans IGBT Chip N-CH 1.25KV 30A 3-Pin TO-3PN Rail (Alt: FGA15S125P)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8159
  • 500:€0.8289
  • 100:€0.8419
  • 50:€0.8549
  • 25:€0.9419
  • 10:€1.1019
  • 1:€1.3469
FGA15S125P
DISTI # FGA15S125P		ON SemiconductorTrans IGBT Chip N-CH 1.25KV 30A 3-Pin TO-3PN Rail - Bulk (Alt: FGA15S125P)
Min Qty: 363
Container: Bulk		Americas - 0
  • 3630:$0.8509
  • 1815:$0.8729
  • 1089:$0.8839
  • 726:$0.8959
  • 363:$0.9009
FGA15S125P
DISTI # FGA15S125P		ON SemiconductorTrans IGBT Chip N-CH 1.25KV 30A 3-Pin TO-3PN Rail - Rail/Tube (Alt: FGA15S125P)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$0.7649
  • 2700:$0.7839
  • 1800:$0.7939
  • 900:$0.8049
  • 450:$0.8099
FGA15S125P
DISTI # 63W2871		ON SemiconductorSA2TIGBT TO3PN 15A 1250V / TUBE0
  • 10000:$0.8500
  • 2500:$0.9000
  • 1000:$0.9430
  • 500:$1.1100
  • 100:$1.2300
  • 10:$1.4800
  • 1:$1.8200
FGA15S125P
DISTI # 512-FGA15S125P		ON SemiconductorIGBT Transistors FORECAST FG
RoHS: Compliant		82
  • 1:$1.8200
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0800
  • 1000:$0.8990
  • 2500:$0.8380
  • 5000:$0.8070
  • 10000:$0.7750
FGA15S125PFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
RoHS: Compliant		14400
  • 1000:$0.9100
  • 500:$0.9600
  • 100:$1.0000
  • 25:$1.0400
  • 1:$1.1200
FGA15S125P
DISTI # 8648764		ON SemiconductorIGBT 1250V 15A SHORTED-ANODE TO3PN, PK805
  • 500:£1.1920
  • 250:£1.2620
  • 100:£1.3500
  • 50:£1.5440
  • 5:£1.7540
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 Contact F Crimp ST Cable Reel - Bulk (Alt: 1053002100)
NSR0530HT1G

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Mfr.#: BCAP0003 P270 S01

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 CAP 3F -10% +20% 2.7V T/H
Disponibilità
Azione:
63
Su ordine:
2046
Inserisci la quantità:
Il prezzo attuale di FGA15S125P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,82 USD
1,82 USD
10
1,55 USD
15,50 USD
100
1,24 USD
124,00 USD
500
1,08 USD
540,00 USD
1000
0,90 USD
899,00 USD
2500
0,84 USD
2 095,00 USD
5000
0,81 USD
4 035,00 USD
10000
0,78 USD
7 750,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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