FDMS2572

Mfr. #:: FDMS2572
Produttore:: ON Semiconductor / Fairchild
Descrizione:: MOSFET LOW VOLTAGE
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FDMS2572 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: FDMS2572 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: Power-56-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 150 V

Id - Corrente di scarico continua:: 4.5 A

Rds On - Resistenza Drain-Source:: 36 mOhms

Vgs - Tensione Gate-Source:: 20 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 2.5 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: UltraFET

Confezione:: Bobina

Altezza:: 0.8 mm

Lunghezza:: 6 mm

Serie:: FDMS2572

Tipo di transistor:: 1 N-Channel

Tipo:: MOSFET

Larghezza:: 5 mm

Marca:: ON Semiconductor / Fairchild

Transconduttanza diretta - Min:: 14 S

Tempo di caduta:: 31 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 8 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 38 ns

Tempo di ritardo di accensione tipico:: 11 ns

Unità di peso:: 0.007408 oz

Tags: FDMS25, FDMS2, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS2572 Valutazioni e recensioni

C***s

Seller accidentally didn't ship a part on a previous order and sent it with this order. Very happy.

2019-05-27

A***o

I recommend the seller!

2019-01-29

FDMS2572 Descrizione

***emi: N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ

***rchild Semiconductor: UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

***ment14 APAC: MOSFET, N CH, 150V, 27A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***emi: N-Channel UltraFET® Trench MOSFET 150V, 4.9A, 47mΩ

***ure Electronics: N-Channel 150 V 47 mOhm UltraFET Trench Mosfet SOIC-8

***Yang: Trans MOSFET N-CH 150V 4.9A 8-Pin SOIC N T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Package/Case:8-SOIC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Current Rating:4.9A; Mounting Type:Surface Mount; No. of Pins:8 ;RoHS Compliant: No

***rchild Semiconductor: UltraFET® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; SMD Marking:FDS2572; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): IRF7815PBF N-channel MOSFET Transistor; 5.1 A; 150 V; 8-Pin SOIC

***ark: Mosfet Transistor, N Channel, 5.1 A, 150 V, 0.034 Ohm, 10 V, 4 V

***ure Electronics: Single N-Channel 150 V 43 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET,W DIODE,N CH,150V,5.1A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P

***roFlash: Power Field-Effect Transistor, 5.1A I(D), 150V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ure Electronics: N-Channel 150 V 0.063 Ohm Surface Mount STripFET VI DeepGATE Mosfet - SOIC-8

***icroelectronics: N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFET

***ark: MOSFET, N-CH, 150V, 5A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:8PinsRoHS Compliant: Yes

***icroelectronics: N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET͐2;2; III Power MOSFET

***ical: Trans MOSFET N-CH 150V 5A 8-Pin SO N T/R

***r Electronics: Power Field-Effect Transistor, 5A I(D), 150V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: DIODE GEN PURP 600V 30A TO220F

***Yang: N-Channel 150V 4.7A (Ta) 3.2W (Ta), 70W (Tc) Surface Mount TO-252 - Bulk

***i-Key: MOSFET N-CH 150V 4.7A D-PAK

***ser: MOSFETs 150V NCh PowerTrench

***el Nordic: Contact for details

***ure Electronics: Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R

***enic: 150V 3.5A 50m´Î@10V5A 1.56W 2V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.1W; No. of Pins:8

FDMS2572 Maggiori informazioni

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FDMS2572 DISTI # V72:2272_06338009	ON Semiconductor	150V, 4.5A,47 OHM, NCH ULTRAFE	1309	1000:$1.0772 500:$1.1590 250:$1.1828 100:$1.3142 25:$1.6174 10:$1.6193 1:$1.8816
FDMS2572 DISTI # FDMS2572CT-ND	ON Semiconductor	MOSFET N-CH 150V 4.5A POWER56 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2887In Stock	1000:$1.1122 500:$1.3423 100:$1.7258 10:$2.1480 1:$2.3800
FDMS2572 DISTI # FDMS2572DKR-ND	ON Semiconductor	MOSFET N-CH 150V 4.5A POWER56 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2887In Stock	1000:$1.1122 500:$1.3423 100:$1.7258 10:$2.1480 1:$2.3800
FDMS2572 DISTI # FDMS2572TR-ND	ON Semiconductor	MOSFET N-CH 150V 4.5A POWER56 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.0053
FDMS2572 DISTI # 25921903	ON Semiconductor	150V, 4.5A,47 OHM, NCH ULTRAFE	1309	1000:$1.0772 500:$1.1590 250:$1.1828 100:$1.3142 25:$1.6174 10:$1.6193 8:$1.8816
FDMS2572 DISTI # FDMS2572	ON Semiconductor	Trans MOSFET N-CH 150V 4.5A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS2572) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.8839 6000:$0.8789 12000:$0.8669 18000:$0.8559 30000:$0.8349
FDMS2572 DISTI # FDMS2572	ON Semiconductor	Trans MOSFET N-CH 150V 4.5A 8-Pin Power 56 T/R (Alt: FDMS2572) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.1769 6000:€0.9809 12000:€0.9049 18000:€0.8409 30000:€0.7839
FDMS2572 DISTI # FDMS2572	ON Semiconductor	Trans MOSFET N-CH 150V 4.5A 8-Pin Power 56 T/R (Alt: FDMS2572) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.8418 6000:$0.8094 9000:$0.7794 15000:$0.7516 30000:$0.7257 75000:$0.7015 150000:$0.6900
FDMS2572 DISTI # 88T3302	ON Semiconductor	MOSFET Transistor, N Channel, 27 A, 150 V, 0.036 ohm, 10 V, 3 V RoHS Compliant: Yes	1663	1:$2.0000 10:$1.7000 25:$1.5900 50:$1.4700 100:$1.3600 250:$1.2800 500:$1.1900 1000:$0.9820
FDMS2572 DISTI # 86K1360	ON Semiconductor	N CHANNEL MOSFET, 150V, 27A, POWER 56, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:27A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$0.9150 3000:$0.8980 6000:$0.8810 12000:$0.8470
FDMS2572. DISTI # 29AC6265	Fairchild Semiconductor Corporation	FET 150V 47.0 MOHM MLP ROHS COMPLIANT: YES	0	1:$0.9150 3000:$0.8980 6000:$0.8810 12000:$0.8470
FDMS2572	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 27A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	22562	1000:$0.9900 500:$1.0400 100:$1.0800 25:$1.1300 1:$1.2200
FDMS2572 DISTI # 512-FDMS2572	ON Semiconductor	MOSFET LOW VOLTAGE RoHS: Compliant	2998	1:$2.0000 10:$1.7000 100:$1.3600 500:$1.1900 1000:$0.9820 3000:$0.9150 6000:$0.8810 9000:$0.8470
FDMS2572	Fairchild Semiconductor Corporation	27 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET	855
FDMS2572	Fairchild Semiconductor Corporation	27 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET	427	201:$1.3875 92:$1.5000 1:$3.0000
FDMS2572 DISTI # 7599140P	ON Semiconductor	MOSFET N-CH 150V 4.5A ULTRAFET POWER 56, RL	2568	20:£0.9850 40:£0.9450
FDMS2572	Fairchild Semiconductor Corporation		3360
FDMS2572DKR	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 25
FDMS2572 DISTI # 2083277	ON Semiconductor	MOSFET, N CH, 150V, 27A, POWER56 RoHS: Compliant	1673	1:£1.7400 10:£1.3500 100:£1.0500 250:£0.9840 500:£0.9170
FDMS2572 DISTI # 2083277	ON Semiconductor	MOSFET, N CH, 150V, 27A, POWER56 RoHS: Compliant	1663	1:$3.1700 10:$2.6900 100:$2.1600 500:$1.8800 1000:$1.5600 3000:$1.4500 6000:$1.4000 9000:$1.3500
FDMS2572 DISTI # C1S541901391959	ON Semiconductor	Trans MOSFET N-CH Si 150V 4.5A 8-Pin Power 56 T/R RoHS: Compliant	1309	250:$1.1828 100:$1.3142 25:$1.6174 10:$1.6193

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Disponibilità

Azione:: Available
Su ordine:: 1987
Inserisci la quantità:

Il prezzo attuale di FDMS2572 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,00 USD~~; ~~2,00 USD~~

10: ~~1,70 USD~~; ~~17,00 USD~~

100: ~~1,36 USD~~; ~~136,00 USD~~

500: ~~1,19 USD~~; ~~595,00 USD~~

1000: ~~0,98 USD~~; ~~982,00 USD~~

Iniziare con

FDMS25 6
FDMS2 13
FDMS 328
FDM 847

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FDMS2572

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

C***s

A***o

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes