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BFN27E6327HTSA1

BFN27E6327HTSA1
Mfr. #:
BFN27E6327HTSA1
Produttore:
Infineon Technologies
Descrizione:
Bipolar Transistors - BJT PNP Silicon Hi-Volt TRANSISTORS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BFN27E6327HTSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23-3
Polarità del transistor:
PNP
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
300 V
Collettore-tensione di base VCBO:
300 V
Emettitore-tensione di base VEBO:
5 V
Tensione di saturazione collettore-emettitore:
0.5 V
Corrente massima del collettore CC:
500 mA
Guadagno larghezza di banda prodotto fT:
100 MHz
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Serie:
BFN27
Confezione:
Bobina
Marca:
Tecnologie Infineon
Corrente continua del collettore:
200 mA
Pd - Dissipazione di potenza:
360 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Parte # Alias:
27 BFN BFN27E6327XT E6327 SP000014782
Unità di peso:
0.000282 oz
Tags
BFN27E63, BFN27E, BFN27, BFN2, BFN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***nell
TRANSISTOR, BIPOLAR, PNP, -300V, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 360mW; DC Collector Current: -200mA; DC Current Gain hFE: 25hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
PNP Silicon High-Voltage Transistors | Summary of Features: Suitable for video output stages in TV sets and switching power supplies; High breakdown voltage; Low collector-emitter saturation voltage; Complementary types: BFN26 (NPN); Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Suitable for video output stages TV sets and switching power supplies
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***nell
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 300mW; DC Collector Current: -500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): -500mV; Current Ic Continuous a Max: -500mA; Gain Bandwidth ft Typ: 50MHz; Hfe Min: 40; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
***Yang
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***r Electronics
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***ment14 APAC
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:40; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:10mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:2D; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:300V
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***ark
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:200mA; Power Dissipation:350mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: Yes
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TRANSISTOR, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:300mW; DC Collector Current:-200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:-400mV; Current Ic Continuous a Max:-200mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal
Parte # Mfg. Descrizione Azione Prezzo
BFN27E6327HTSA1
DISTI # V72:2272_06391544		Infineon Technologies AGTrans GP BJT PNP 300V 0.2A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		0
    BFN27E6327HTSA1
    DISTI # V36:1790_06391544    		Infineon Technologies AGTrans GP BJT PNP 300V 0.2A Automotive 3-Pin SOT-23 T/R
    RoHS: Compliant    		0
    • 2400000:$0.0344
    • 240000:$0.0357
    • 24000:$0.0359
    BFN27E6327HTSA1
    DISTI # BFN27E6327HTSA1TR-ND    		Infineon Technologies AGTRANS PNP 300V 0.2A SOT-23
    RoHS: Compliant
    Min Qty: 24000
    Container: Tape & Reel (TR)    		Limited Supply - Call
    • 24000:$0.0461
    BFN27E6327HTSA1
    DISTI # BFN27E6327HTSA1CT-ND    		Infineon Technologies AGTRANS PNP 300V 0.2A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BFN27E6327HTSA1
      DISTI # BFN27E6327HTSA1DKR-ND      		Infineon Technologies AGTRANS PNP 300V 0.2A SOT-23
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BFN27E6327HTSA1
        DISTI # BFN27E6327HTSA1        		Infineon Technologies AGTrans GP BJT PNP 300V 0.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFN27E6327HTSA1)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 72000
        • 30000:$0.0316
        • 18000:$0.0322
        • 12000:$0.0333
        • 6000:$0.0346
        • 3000:$0.0359
        BFN 27 E6327
        DISTI # 726-BFN27E6327        		Infineon Technologies AGBipolar Transistors - BJT PNP Silicon Hi-Volt TRANSISTORS
        RoHS: Compliant        		49832
        • 1:$0.3800
        • 10:$0.2590
        • 100:$0.1080
        • 1000:$0.0740
        • 3000:$0.0580
        • 9000:$0.0490
        • 24000:$0.0470
        • 45000:$0.0440
        BFN27E6327HTSA1
        DISTI # 726-BFN27E6327HTSA1        		Infineon Technologies AGBipolar Transistors - BJT PNP Silicon Hi-Volt TRANSISTORS
        RoHS: Compliant        		27584
        • 1:$0.3800
        • 10:$0.2590
        • 100:$0.1080
        • 1000:$0.0740
        • 3000:$0.0580
        • 9000:$0.0490
        • 24000:$0.0470
        • 45000:$0.0440
        • 99000:$0.0420
        BFN27E6327HTSA1
        DISTI # 7528120P        		Infineon Technologies AGTRANSISTOR PNP VIDEO 300V 200MA SOT23, RL3000
        • 2000:£0.0290
        • 1000:£0.0310
        • 500:£0.0340
        • 250:£0.0400
        BFN27E6327HTSA1
        DISTI # BFN27        		Infineon Technologies AGPNP 300V 0,2A 0,36W B>25 SOT23
        RoHS: Compliant        		0
        • 100:€0.0745
        • 500:€0.0345
        • 3000:€0.0245
        • 6000:€0.0235
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        OMO.#: OMO-FMMT560QTA-DIODES

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        Disponibilità
        Azione:
        27
        Su ordine:
        2010
        Inserisci la quantità:
        Il prezzo attuale di BFN27E6327HTSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
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        Prezzo unitario
        est. Prezzo
        1
        0,38 USD
        0,38 USD
        10
        0,26 USD
        2,59 USD
        100
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        10,80 USD
        1000
        0,07 USD
        74,00 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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